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SBM1040 PDF даташит

Спецификация SBM1040 изготовлена ​​​​«Diodes Incorporated» и имеет функцию, называемую «10A LOW VF SCHOTTKY BARRIER RECTIFIER».

Детали детали

Номер произв SBM1040
Описание 10A LOW VF SCHOTTKY BARRIER RECTIFIER
Производители Diodes Incorporated
логотип Diodes Incorporated логотип 

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SBM1040 Даташит, Описание, Даташиты
SBM1040
10A LOW VF SCHOTTKY BARRIER RECTIFIER
POWERMITEâ3
Features
· Guard Ring Die Construction for
Transient Protection
· Low Power Loss, High Efficiency
· High Surge Capability
· High Max Junction Temperature Rating
· Very Low Forward Voltage Drop
· Very Low Leakage Current
· For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
· Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
· Case: POWERMITEâ3, Molded Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Polarity: See Diagram
· Weight: 0.072 grams (approx.)
· Marking information: See sheet 3
AE
PG
3
JH
B
12
D
CC
M
K
L
PIN 1
PIN 2
PIN 3, BOTTOMSIDE
HEAT SINK
Note:
Pins 1 & 2 must be electrically
connected at the printed circuit board.
POWERMITEâ3
Dim Min Max
A 4.03 4.09
B 6.40 6.61
C .889 NOM
D 1.83 NOM
E 1.10 1.14
G .178 NOM
H 5.01 5.17
J 4.37 4.43
K .178 NOM
L .71 .77
M .36 .46
P 1.73 1.83
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (see also Figure 4)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
@TC = 88°C
Typical Thermal Resistance Junction to Soldering Point
Operating Temperature Range
Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
RqJS
Tj
TSTG
Value
40
28
10
150
2.5
-65 to +150
-65 to +150
Unit
V
V
A
A
°C/W
°C
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 1)
Forward Voltage (Note 1)
Symbol
V(BR)R
VFM
Peak Reverse Current (Note 1)
IRM
Junction Capacitance
Cj
Notes: 1. Short duration test pulse used to minimize self-heating effect.
Min Typ Max Unit
Test Condition
40 ¾ ¾ V IR = 1mA
¾ 0.45 0.49
IF = 8A, TS = 25°C
¾ ¾ 0.41 V IF = 8A, TS = 125°C
¾ 0.47 0.51
IF = 10A, TS = 25°C
¾
¾
0.1
12.5
0.3
25
mA
TS = 25°C, VR = 35V
TS = 100°C, VR = 35V
¾ 700 ¾ pF f = 1.0MHz, VR = 4.0V DC
DS30255 Rev. F-2
1 of 3
SBM1040









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SBM1040 Даташит, Описание, Даташиты
100
10
TA = +150°C
1
0.1
TA = +25°C
0.01
0.001
TA = +75°C
0.0001
0
100 200 300 400 500 600
VF, INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 1 Typical Forward Characteristics
10,000
f = 1MHz
1000
1000
100
10
TA = +150ºC
TA = +100ºC
1
TA = +75ºC
0.1
0.01
05
TA = +25ºC
10 15 20 25 30 35 40
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
12.5
10.0
7.5
5.0
Note 1
Note 3
Note 2
2.5
100
0 5 10 15 20 25 30 35 40
VR, REVERSE VOLTAGE (V)
Fig. 3 Typical Junction Capacitance vs. Reverse Voltage
0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 4 DC Forward Current Derating
Notes:
1. TA = TSOLDERING POINT, RqJS = 2.5°C/W, RqSA = 0°C/W.
2. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad
dimensions 0.25” x 1.0”. RqJA in range of 15-30°C/W.
3. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of
60-75°C/W.
DS30255 Rev. F-2
2 of 3
SBM1040









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SBM1040 Даташит, Описание, Даташиты
8
7 Tj = 150°C
6
1
5 dc
4
3
2
2
1
0
0 1.5 3 4.5 6 7.5 9 10.5 12 13.5 15
IF(AV), AVERAGE FORWARD CURRENT (A)
Fig. 5 Forward Power Dissipation
Notes:
1. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad
dimensions 0.25” x 1.0”. RqJA in range of 15-30°C/W.
2. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of
60-75°C/W.
Ordering Information (Note 3)
Device
SBM1040-13
Packaging
POWERMITEâ3
Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Shipping
5000/Tape & Reel
Marking Information
SBM1040
YYWW
SBM1040 = Product type marking code
= Manufacturers’ code marking
YYWW = Date code marking
YY = Last two digits of year ex: 02 for 2002
WW = Week code 01 to 52
POWERMITE is a registered trademark of MicroSemi Corporation.
DS30255 Rev. F-2
3 of 3
SBM1040










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