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SBM1040CT-13 PDF даташит

Спецификация SBM1040CT-13 изготовлена ​​​​«Diodes Incorporated» и имеет функцию, называемую «10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER».

Детали детали

Номер произв SBM1040CT-13
Описание 10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
Производители Diodes Incorporated
логотип Diodes Incorporated логотип 

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SBM1040CT-13 Даташит, Описание, Даташиты
SBM1040CT
10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
POWERMITEÒ3
Features
UNDER DEVELOPMENT
· Guard Ring Die Construction for
Transient Protection
· Low Power Loss, High Efficiency
· High Surge Capability
· Very Low Forward Voltage Drop
· For Use in Low Voltage, High Frequency
Inverters, OR’ing, and Polarity Protection
Applications
· Plastic Material: UL Flammability
Classification Rating 94V-0
AE
PG
3
JH
B
Mechanical Data
· Case: POWERMITEâ3 Molded Plastic
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
Method 208
· Polarity: See Diagram
· Marking: See Sheet 2
· Weight: 0.072 grams (approx.)
12
D
C
PIN 1
PIN 2
C
M
K
L
PIN 3, BOTTOMSIDE
HEAT SINK
POWERMITEâ3
Dim Min Max
A 4.03 4.09
B 6.40 6.61
C .889 NOM
D 1.83 NOM
E 1.10 1.14
G .178 NOM
H 5.01 5.17
J 4.37 4.43
K .178 NOM
L .71 .77
M .36 .46
P 1.73 1.83
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (See also Figure 5)
per element
total device
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
Per Package (JEDEC Method), total device
TC = 115°C
Typical Thermal Resistance Junction to Soldering Point Per Element
Operating Temperature Range
Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
RqJS
Tj
TSTG
Value
40
28
5
10
50
2.5
-55 to +125
-55 to +150
Unit
V
V
A
A
°C/W
°C
°C
DS30356 Rev. 2 - 1
1 of 3
www.diodes.com
SBM1040CT









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SBM1040CT-13 Даташит, Описание, Даташиты
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 1)
Forward Voltage (Note 1)
Symbol
V(BR)R
Per Element
VF
Min
40
¾
¾
¾
¾
Peak Reverse Current (Note 1)
Per Element
IR
¾
¾
Total Capacitance
Per Element
CT
¾
Notes: 1. Short duration test pulse used to minimize self-heating effect.
Typ
¾
0.45
0.39
0.53
0.50
35
4
10
2
375
Max
¾
0.48
0.42
0.575
0.55
150
10
80
5
¾
Unit Test Condition
V IR = 500mA
IF = 5A, Tj = 25°C
V
IF = 5A, Tj = 100°C
IF = 10A, Tj = 25°C
IF = 10A, Tj = 100°C
mA VR = 35V, Tj = 25°C
mA VR = 35V, Tj = 100°C
mA VR = 17.5V, Tj = 25°C
mA VR = 17.5V, Tj = 100°C
pF f = 1.0MHz, VR = 4.0V DC
Ordering Information (Note 2)
Device
SBM1040CT-13
Packaging
POWERMITEâ3
Notes: 2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Shipping
5000/Tape & Reel
Marking Information
SBM1040CT
YYWW
SBM1040CT = Product type marking code
= Manufacturers’ code marking
YYWW = Date code marking
YY = Last digit of year ex: 2 for 2002
WW = Week code 01 to 52
100
10
1 Tj = +100°C
Tj = +125°C
0.1
0.01
Tj = -25°C
0.001
Tj = +25°C
0.0001
0
100 200 300 400 500 600
VF, INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 1 Typical Forward Characteristics, Per Element
100
10
Tj = +125°C
1 Tj = +100°C
0.1
0.01
Tj = +25°C
0.001
05
10 15 20 25 30 35 40
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics, Per Element
UNDER DEVELOPMENT
DS30356 Rev. 2 - 1
2 of 3
www.diodes.com
SBM1040CT









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SBM1040CT-13 Даташит, Описание, Даташиты
50 10,000
Single Half-Sine-Wave
(JEDEC Method)
40
TC = 115°C
Total Device
30
1000
20
f = 1MHz
10
0
1
10 100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
7.5
6.0
Note 1
100
0
5 10 15 20 25 30 35 40
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Capacitance
vs. Reverse Voltage, Per Element
4
3.5 Tj = 125°C
3
Note 2
dc
4.5
Note 2
3.0
1.5 Note 3
0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 DC Forward Current Derating
2.5
2
1.5 Note 3
1
0.5
0
0 1 2 3 4 5 6 7 8 9 10
IF(AV), AVERAGE FORWARD CURRENT (A)
Fig. 6 Forward Power Dissipation
Notes:
1. TA = TSOLDERING POINT, RqJS = 2.5°C/W, RqSA = 0°C/W.
2. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad
dimensions 0.25” x 1.0”. RqJA in range of 20-40°C/W.
3. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of
85-115°C/W.
UNDER DEVELOPMENT
POWERMITE is a registered trademark of Microsemi Corporation.
DS30356 Rev. 2 - 1
3 of 3
www.diodes.com
SBM1040CT










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Номер в каталогеОписаниеПроизводители
SBM1040CT-1310A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIERDiodes Incorporated
Diodes Incorporated

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