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SBT30S PDF даташит

Спецификация SBT30S изготовлена ​​​​«EIC discrete Semiconductors» и имеет функцию, называемую «SCHOTTKY BARRIER RECTIFIER DIODES».

Детали детали

Номер произв SBT30S
Описание SCHOTTKY BARRIER RECTIFIER DIODES
Производители EIC discrete Semiconductors
логотип EIC discrete Semiconductors логотип 

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SBT30S Даташит, Описание, Даташиты
ELECTRONICS INDUSTRY (USA) CO., LTD.
103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND
TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com
SBT20S - SBTB0S
PRV : 20 - 100 Volts
IO : 2.5 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* High efficiency
* Low power loss
* Low cost
* Low forward voltage drop
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375", 9.5mm Lead Length See Fig.1
Peak Forward Surge Current,
8.3ms single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 2.5 Amps. (Note 1)
Maximum Reverse Current at
Rated DC Blocking Voltage (Note 1)
Junction Temperature Range
Storage Temperature Range
Notes :
(1) Pulse Test : Pulse Width = 300 µs, Duty Cycle = 2%.
SYMBOL
VRRM
VRMS
VDC
IF(AV)
IFSM
VF
IR
TJ
TSTG
SCHOTTKY BARRIER
RECTIFIER DIODES
D2
0.161 (4.1)
0.154 (3.9)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.284 (7.2)
0.268 (6.8)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
SBT 20S SBT 30S SBT 40S SBT 50S SBT 60S SBT 70S SBT 80S SBT 90S SB TB0S
20 30 40 50 60 70 80 90 100
14 21 28 35 42 49 56 63 70
20 30 40 50 60 70 80 90 100
UNIT
Volts
Volts
Volts
2.5 Amps.
0.5
- 65 to + 125
75
0.74
0.5
- 65 to + 150
- 65 to + 150
0.79
Amps.
Volt.
mA
°C
°C
UPDATE : MAY 10, 1999









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SBT30S Даташит, Описание, Даташиты
ELECTRONICS INDUSTRY (USA) CO., LTD.
103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND
TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com
RATING AND CHARACTERISTIC CURVES ( SBT20S - SBTB0S )
FIG.1 - FORWARD CURRENT DERATING CURVE
2.5
SBT50S
2.0 THRU
SBT20S
SBTB0S
SBT30S
1.5 SBT40S
1.0
0.5
0123456
0
0 25 50 75 100 125 150 175
LEAD TEMPERATURE, (°C)
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
75
60
45
30
15
0
12
4 6 10 20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
20
10 SBT20S
SBT30S
SBT40S
SBT80S
SBT90S
SBTB0S
SBT50S
SBT60S
1.0 SBT70S
TJ = 25 °C
PULSE WIDTH = 300µs
DUTY CYCLE = 2%
0.1
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1
FORWARD VOLTAGE, VOLTS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
TJ= 100 °C
1.0
0.1 TJ = 25 °C
0.01
0
20 40
60 80 100 120
PERCENT OF RATED REVERSE
VOLTAGE, (%)
140










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