SBT5551F PDF даташит
Спецификация SBT5551F изготовлена «AUK corp» и имеет функцию, называемую «NPN Silicon Transistor». |
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Детали детали
Номер произв | SBT5551F |
Описание | NPN Silicon Transistor |
Производители | AUK corp |
логотип |
3 Pages
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Semiconductor
SBT5551F
NPN Silicon Transistor
Descriptions
• General purpose amplifier
• High voltage application
Features
• high collector breakdown voltage : VCBO = 180V, VCEO = 160V
• Low collector saturation voltage : VCE(sat)=0.5V(MAX.)
• Complementary pair with SBT5401F
Ordering Information
Type NO.
Marking
Package Code
SBT5551F FNF SOT-23F
Outline Dimensions
unit : mm
2.4±0.1
1.6±0.1
1
3
2
PIN Connections
1. Base
2. Emitter
3. Collector
KST-2097-000
1
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SBT5551F
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
180
160
6
600
200
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BVCBO
IC=100µA, IE=0
Collector-Emitter breakdown voltage
BVCEO
IC=1mA, IB=0
Emitter-Base breakdown voltage
BVEBO
IE=10µA, IC=0
Collector cut-off current
ICBO
VCB=120V, IE=0
Emitter cut-off current
IEBO
VEB=4V, IC=0
DC current gain
hFE (1)
VCE=5V, IC=1mA
DC current gain
hFE (2)
VCE=5V, IC=10mA
DC current gain
Collector-Emitter saturation voltage
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
hFE (3)
VCE(sat)(1)*
VCE(sat)(2)*
VBE(sat)(1)*
VCE=5V, IC=50mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
Base-Emitter saturation voltage
VBE(sat)(2)* IC=50mA, IB=5mA
Transition frequency
fT VCE=10V, IC=10mA
Collector output capacitance
Cob VCB=10V, IE=0, f=1MHz
* : Pulse Tester : Pulse Width ≤300µs, Duty Cycle ≤2.0%
(Ta=25°C)
Min. Typ. Max. Unit
180 - - V
160 - - V
6- - V
- - 100 nA
- - 100 nA
80 -
-
80 - 250 -
30 -
-
- - 0.2 V
- - 0.5 V
-- 1V
-- 1V
100 - 400 MHz
- - 6 pF
KST-2097-000
2
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Electrical Characteristic Curves
Fig. 1 hFE - IC
Fig. 2 IC - VBE
SBT5551F
Fig. 3 fT - IC
v Fig. 4 VCE(sat), VBE(sat) - IC
Fig. 5 Cob - VCB
KST-2097-000
3
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Номер в каталоге | Описание | Производители |
SBT5551 | NPN Silicon Transistor | AUK corp |
SBT5551F | NPN Silicon Transistor | AUK corp |
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DataSheet26.com | 2020 | Контакты | Поиск |