DataSheet26.com

SC1405TS.TR PDF даташит

Спецификация SC1405TS.TR изготовлена ​​​​«Semtech Corporation» и имеет функцию, называемую «HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER».

Детали детали

Номер произв SC1405TS.TR
Описание HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER
Производители Semtech Corporation
логотип Semtech Corporation логотип 

12 Pages
scroll

No Preview Available !

SC1405TS.TR Даташит, Описание, Даташиты
HIGH SPEED SYNCHRONOUS POWER
MOSFET SMART DRIVER
SC1405
August 31, 2000
TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com
DESCRIPTION
The SC1405 is a Dual-MOSFET Driver with an internal
Overlap Protection Circuit to prevent shoot-through
from VIN to GND in the main switching and syn-
chronous MOSFET’s. Each driver is capable of driving
a 3000pF load in 20ns rise/fall time and has ULTRA-
FAST propagation delay from input transition to the
gate of the power FET’s. The Overlap Protection circuit
ensures that the second FET does not turn on until the
top FET source has reached a voltage low enough to
prevent shoot-through. The delay between the bottom
gate going low to the top gate transitioning to high is
externally programmable via a capacitor for optimal
reduction of switching losses at the operating fre-
quency. The bottom FET may be disabled at light loads
by keeping S_MOD low to trigger asynchronous opera-
tion, thus saving the bottom FET’s gate drive current
and inductor ripple current. An internal voltage refer-
ence allows threshold adjustment for an Output Over-
Voltage protection circuitry, independent of the PWM
feedback loop. Under-Voltage-Lock-Out circuit is in-
cluded to guarantee that both driver outputs are low
when the 5V logic level is less than or equal to 4.4V
(typ) at supply ramp up (4.35V at supply ramp down). A
CMOS output provides status indication of the 5V sup-
ply. A low enable input places the IC in stand-by mode
thereby reducing supply current to less than 10µA.
SC1405 is offered in a high pitch (.025” lead spacing)
TSSOP package.
PIN CONFIGURATION
FEATURES
= Fast rise and fall times (20ns typical with 3000pf
load)
= 20ns max. Propagation delay (BG going low)
= Adaptive/programmable shoot-through protection
= Wide input voltage range (4.5-25V)
= Programmable delay between MOSFET’s
= Power saving asynchronous mode control
= Output overvoltage protection/overtemp shutdown
= Under-Voltage lock-out and power ready signal
= Less than 10µA stand-by current (EN=low)
= Power ready output signal
APPLICATIONS
= High Density/Fast transient power supplies
= Motor Drives/Class-D amps
= High frequency (to 1.2 MHz) operation allows use
of small inductors and low cost caps in place of
electrolytics
= Portable computers
ORDERING INFORMATION
DEVICE(1)
PACKAGE TEMP. RANGE (TJ)
SC1405TS.TR TSSOP-14
0 - 125°C
Note:
(1) Only available in tape and reel packaging. A reel
contains 2500 devices.
BLOCK DIAGRAM
Top View
(14-Pin TSSOP)
© 2000 SEMTECH CORP.
1
652 MITCHELL ROAD NEWBURY PARK CA 91320









No Preview Available !

SC1405TS.TR Даташит, Описание, Даташиты
HIGH SPEED SYNCHRONOUS POWER
MOSFET SMART DRIVER
SC1405
August 31, 2000
ABSOLUTE MAXIMUM RATINGS
Parameter
VCC Supply Voltage
BST to PGND
BST to DRN
DRN to PGND
OVP_S to PGND
Input pin
Continuous Power Dissipation
Symbol
VMAX5V
VMAXBST-PGND
VMAXBST-DRN
VMAXDRN-PGN
VMAXOVP_S-PGND
CO
Pd
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Operating Temperature Range
Storage Temperature Range
Lead Temperature (Soldering) 10 sec
θJC
θJA
TJ
TSTG
TLEAD
NOTE:
(1) Specification refers to application circuit in Figure 1.
Conditions
Tamb = 25°C, TJ = 125°C
Tcase = 25°C, TJ = 125°C
Maximum
7
30
7
25
10
-0.3 to 7.3
0.66
2.56
Units
V
V
V
V
V
V
W
40 °C/W
150 °C/W
0 to +125 °C
-65 to +150 °C
300 °C
ELECTRICAL CHARACTERISTICS (DC OPERATING SPECIFICATIONS)
Unless specified: -0 < θJ < 125°C; VCC = 5V; 4V < VBST < 26V
PARAMETER
SYMBOL
CONDITIONS
MIN TYP
POWER SUPPLY
Supply Voltage
Quiescent Current
VCC
Iq_stby
VCC
EN = 0V
4.15 5
Quiescent Current, operating Iq_op
PRDY
VCC = 5V,CO=0V
1
High Level Output Voltage
Low Level Output Voltage
VOH
VCC = 4.6V, lload = 10mA
4.5
VOL VCC < UVLO threshold, lload =
10µA
4.55
0.1
DSPS_DR
High Level Output Voltage
Low Level Output Voltage
UNDER-VOLTAGE LOCKOUT
VOH
VOL
VCC = 4.6V, Cload = 100pF
VCC = 4.6V, Cload = 100pF
4.15
Start Threshold
Hysteresis
Logic Active Threshold
VSTART
VhysUVLO
VACT
EN is low
4.2 4.4
0.05
MAX UNITS
6.0 V
10 µA
ma
V
0.2 V
V
0.05 V
4.6 V
V
1.5 V
© 2000 SEMTECH CORP.
2
652 MITCHELL ROAD NEWBURY PARK CA 91320









No Preview Available !

SC1405TS.TR Даташит, Описание, Даташиты
HIGH SPEED SYNCHRONOUS POWER
MOSFET SMART DRIVER
SC1405
August 31, 2000
ELECTRICAL CHARACTERISTICS (DC OPERATING SPECIFICATIONS) Cont.
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
OVERVOLTAGE PROTECTION
Trip Threshold
Hysteresis
S_MOD
VTRIP
VhysOVP
1.145 1.2 1.255
0.8
V
V
High Level Input Voltage
Low Level Input Voltage
ENABLE
VIH
VIL
2.0 V
0.8 V
High Level Input Voltage
Low Level Input Voltage
CO
High Level Input Voltage
Low Level Input Voltage
THERMAL SHUTDOWN
VIH
VIL
VIH
VIL
2.0 V
0.8 V
2.0 V
0.8 V
Over Temperature Trip Point
Hysteresis
HIGH-SIDE DRIVER
TOTP
THYST
165 °C
10 °C
Peak Output Current
Output Resistance
LOW-SIDE DRIVER
IPKH 1.5 A
RsrcTG
duty cycle < 2%, tpw < 100µs,
1.4
TJ = 125°C, VBST - VDRN = 4.5V,
VTG = 4.0V (src)+VDRN
RsinkTG
or VTG = 0.5V (sink)+VDRN
1.4
Peak Output Current
IPKL
2A
Output Resistance
RsrcBG
duty cycle < 2%, tpw < 100µs,
2
TJ = 125°C
RsinkBG
VV_5 = 4.6V, VBG = 4V (src),
2
or VLOWDR = 0.5V (sink)
© 2000 SEMTECH CORP.
3
652 MITCHELL ROAD NEWBURY PARK CA 91320










Скачать PDF:

[ SC1405TS.TR.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
SC1405TS.TRHIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVERSemtech Corporation
Semtech Corporation

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск