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SAP15 PDF даташит

Спецификация SAP15 изготовлена ​​​​«Sanken electric» и имеет функцию, называемую «Darlington transistors».

Детали детали

Номер произв SAP15
Описание Darlington transistors
Производители Sanken electric
логотип Sanken electric логотип 

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SAP15 Даташит, Описание, Даташиты
Darlington transistors with
built-in temperature compensation diodes
for audio amplifier applications
SAPseries
Features
qBuilt-in temperature compensation diodes and one emitter resistor
qReal time temperature compensation
The temperature compensation diodes are mounted on one chip and placed in the center of the chip to
detect temperature rises directly.
qElimination of the temperature dependency of the idling current
The temperature coefficient of the diodes is optimized to have the idling current stabilized; thus one of
the fatal failure modes in conventional Darlington transistors, Thermal Runaway, is avoidable.
qSymmetrical design for the PNP and the NPN pinouts
The new design minimizes the length of the pattern layout, and output distortions are controlled.
qDarlington transistors, temperature compensation diodes and one emitter resistor are
incorporated in one package, so labor for parts insertion as well as the parts count is
reduced.
Line up
Part Number
SAP15P/SAP15N
SAP10P/SAP10N
SAP08P/SAP08N
PC (W)
150
100
80
VCEO ( V )
160
150
150
IC (A)
15
12
10
hFE Emitter resistor ()
5000 to 20000
0.22
5000 to 20000
0.22
5000 to 20000
0.22
sExternal Dimentions (Unit : mm)
15.4±0.3
9.9±0.2
3.2±0.2
4.5±0.2
1.6±0.2
(36°)
a
b
2.54±0.1
3.81±0.1
+0.2
1.35 –0.1
+0.2
0.65 –0.1
+0.2
0.8 –0.1
(7.62)
(12.7)
2.54±0.1
3.81±0.1
17.8±0.3
4±0.1
➀➁ ➂ ➃➄
1±0.1
+0.2
0.65–0.1
Weight: approx 8.3g
a. Part Number
b. Lot Number
sEquivalent Circuit Diagram
NPN
B
C
PNP
E
D Emitter resistor
RE: 0.22Typ.
R :70Typ.
S
SB
D R: 70Typ.
Emitter resistor
RE: 0.22Typ.
E
C
BD C S E
ES C DB









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SAP15 Даташит, Описание, Даташиты
Application Information
1. Recommended Operating Conditions
Add a variable resistor (VR) between diode terminals to adjust the idling current.
resistor having 0 to 200is to be used.
Adjust the forward current flowing over the diodes at 2.5mA.
Adjust the idling current at 40mA with the external variable resistor.
The
Both the temperature coefficients for the transistor and the diodes are matched under the above conditions.
Both the PNP and the NPN are Darlington transistors, so the temperature change ratio of the total four VBE
of the transistors is subject to the compensation. One PN junction diode in the NPN and five Schottky
barrier diodes in the PNP are built-in, and the total six diodes are operating as the temperature compensation.
The temperature coefficient of the total diodes (its variable value) becomes smaller with a larger forward
current (approximately – 0.2mV/°C to 1mA), and the coefficient of the total transistors (its variable value)
also becomes smaller with a larger idling current (approximately – 0.1mV/°C to 10mA), but the both variable
values are small.
Thus, the distortion of the temperature coefficient caused by the different current is small, so the thermal
runaway may not be occurred due to the changes of the recommended ratings; however, the actual operation
is to be confirmed by using an experimental equipment or board.
NPN
B
+VCC
C
S
External variable
resistor (VR)
(0 to 200)
D E 40mA
2.5mA
E
D
S
B
PNP
C
–VCC









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SAP15 Даташит, Описание, Даташиты
2. External Variable Resistor
Total forward voltage (at IF =2.5mA) of the diodes is designed to be equal or less than that of total VBE (at IC
= 40mA) of the transistor, thus the idling current is required to be adjusted at 40mA with an additional
external variable resistor.
The relations are shown as below:
Total VF of Diode Total VBE of Transistor + Total VRE of Emitter Resistor
V=0 to 500mV
The VBE of the transistor is dependent to the hFE, and the VBE is lower with higher hFE and vice versa. The
hFE for both the PNP and the NPN varies between 5k and 20k; thus the VBE is the lowest with the
combination of maximum hFE (20k) each and it is the highest with the combination of minimum hFE (5k)
each.
Presuming the voltage difference between the VF of the diodes and the VBE of the transistors (including the
total voltage drops of the two emitter resistors) as V.
Minimum VBE – Maximum VF variations of the diodes = 0
Maximum VBE – Minimum VF variations of the diodes = 500mV
The current flowing over the diodes and the VR is adjusted at 2.5mA; therefore
500mV 2.5mA = 200
Consequently, the applicable VR value is to be 0 to 200
IC
40mA
VBE Min.
VBE Max.
(P and N: hFE Max.) (P and N: hFE Min.)
Di VF
Variations
TR VBE
Variations
VF = 500mV
VBE










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