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PDF SB100-18 Data sheet ( Hoja de datos )
| Número de pieza | SB100-18 | |
| Descripción | 180V/ 10A Rectifier | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number :EN2580A
SB100-18
Schottky Barrier Diode (Twin Type · Cathode Common)
180V, 10A Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Features
· Low forward voltage (VF max=0.85V).
· Fast reverse recovery time (trr max=45ns).
· Low switching noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
Package Dimensions
unit:mm
1160
[SB100-18]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Repetitive Peak Reverse Voltage
Non-repetitve Peak Reverse Surge Voltage
Average Output Current
Surege Forward Current
Junction Temperature
Storage Temperature
Electrical Characteristics
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
50Hz, resistive load, Tc=102˚C
50Hz sine wave, 1 cycle
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Reverse Recovery Time
Thermal Resistance
Note)*:Value per element
Electrical Connection
Symbol
Conditions
VR
VF
IR
trr
Rthj-c
IR=–4mA, Tj=25˚C*
IF=4A, Tj=25˚C*
VR=–90V, Tj=25˚C*
IF=2A, Tj=25˚C*, –dIF/dt=10A/µs
Junction-Case:Smoothed DC
A:Anode
C:Cathode
SANYO:TO-3PB
Ratings
–180
–190
10
100
–55 to +125
–55 to +125
Unit
V
V
A
A
˚C
˚C
Ratings
min typ
–180
max
0.85
–0.8
45
1.3
Unit
V
V
mA
ns
˚C/W
A:Anode
C:Cathode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22898HA (KT)/5248TA, TS No.2580-1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet SB100-18.PDF ] | |
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