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PDF SB10W05T Data sheet ( Hoja de datos )
| Número de pieza | SB10W05T | |
| Descripción | 50V/ 1A Rectifier | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number:EN4440A
SB10W05T
Schottky Barrier Diode (Twin Type · Cathode Common)
50V, 1A Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Features
· Low forward voltage (VF max=0.55V).
· Fast reverse recovery time (trr max=10ns).
· Low switching noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
trr Test Circuit
Package Dimensions
unit:mm
1254A
[SB10W05T]
unit:mm
1257A
[SB10W05T]
1:Anode
2:Cathode
3:Anode
4:Cathode
SANYO:TP
Electrical Connection
Specifications
Absolute Maximum Ratings at Ta = 25˚C (Value per element)
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IO
IFSM
Tj
Tstg
Conditions
50Hz, resistor load, Tc=120˚C
50Hz, resistor load, Tc=116˚C, Total rating
50Hz sine wave, 1 cycle
Electrical Characteristics at Ta = 25˚C (Value per element)
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance (Junction-Ambient)
Thermal Resistance (Junction-Case)
Symbol
Conditons
VR
VF
IR
C
trr
Rth(j-a)
Rth(j-c)
IR=300µA
IF=1A
VR=25V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
1:Anode
2:Cathode
3:Anode
4:Cathode
SANYO:TP-FA
Ratings
50
55
1
2
10
–55 to +125
–55 to +125
Unit
V
V
A
A
A
˚C
˚C
Ratings
min typ
50
52
90
6
max
0.55
80
10
Unit
V
V
µA
pF
ns
˚C/W
˚C/W
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
43098HA (KT)/53196GI/92793YH (KOTO) AX-8333 No.4440-1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet SB10W05T.PDF ] | |
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