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PDF SB120-18 Data sheet ( Hoja de datos )
| Número de pieza | SB120-18 | |
| Descripción | 180V/ 12A Rectifier | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number :EN2582A
SB120-18
Schottky Barrier Diode (Twin Type · Cathode Common)
180V, 12A Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Features
· Low forward voltage (VF max=0.85V).
· Fast reverse recovery time (trr max=50ns).
· Low switching noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
Package Dimensions
unit:mm
1160
[SB120-18]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Electrical Characteristics
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
50Hz, resistive load, Tc=102˚C
50Hz sine wave, 1 cycle
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Reverse Recovery Time
Thermal Resistance
Note)*:Value per element
Electrical Connection
Symbol
Conditions
VR
VF
IR
trr
Rthj-c
IR=–5mA, Tj=25˚C*
IF=5A, Tj=25˚C*
VR=–90V, Tj=25˚C*
IF=2A, Tj=25˚C*, –dIF/dt=10A/µs
Junction-Case:Smoothed DC
A:Anode
C:Cathode
SANYO:TO-3PB
Ratings
–180
–190
12
120
–55 to +125
–55 to +125
Unit
V
V
A
A
˚C
˚C
Ratings
min typ
–180
max
0.85
–1.0
50
1.1
Unit
V
V
mA
ns
˚C/W
A:Anode
C:Cathode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31098HA (KT)/5248TA, TS No.2582-1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet SB120-18.PDF ] | |
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