|
|
PDF NCR169D Data sheet ( Hoja de datos )
| Número de pieza | NCR169D | |
| Descripción | General Purpose Sensitive Gate Silicon Controlled Rectifier | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NCR169D (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
NCR169D
Advance Information
General Purpose
Sensitive Gate
Silicon Controlled Rectifier
Reverse Blocking Thyristor
PNPN device designed for line-powered general purpose
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in a cost effective plastic TO-226AA package.
• Sensitive Gate Allows Direct Triggering by Microcontrollers and
Other Logic Circuits
• On–State Current Rating of 0.8 Amperes RMS at 80°C
• Surge Current Capability – 10 Amperes
• Immunity to dV/dt – 20 V/µsec Minimum at 110°C
• Glass-Passivated Surface for Reliability and Uniformity
• Device Marking: NCR169D, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off–State Voltage (Note 1.)
(TJ = *40 to 110°C, Sine Wave, 50 to
60 Hz; Gate Open)
VDRM,
VRRM
400 Volts
On-State RMS Current
(TC = 80°C) 180° Conduction Angles
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
TJ = 25°C)
Circuit Fusing Consideration (t = 10 ms)
IT(RMS)
ITSM
0.8 Amp
10 Amps
I2t 0.415 A2s
Forward Peak Gate Power
(TA = 25°C, Pulse Width v 1.0 µs)
Forward Average Gate Power
(TA = 25°C, t = 20 ms)
Forward Peak Gate Current
(TA = 25°C, Pulse Width v 1.0 µs)
Reverse Peak Gate Voltage
(TA = 25°C, Pulse Width v 1.0 µs)
Operating Junction Temperature Range
@ Rate VRRM and VDRM
Storage Temperature Range
PGM
0.1 Watt
PG(AV)
0.10 Watt
IGM 1.0 Amp
VGRM
5.0 Volts
TJ –40 to °C
110
Tstg –40 to °C
150
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
SCR
0.8 AMPERES RMS
400 VOLTS
G
AK
K
G
A
TO–92
(TO–226AA)
CASE 029
STYLE 10
MARKING
DIAGRAM
NCR
169D
YWW
Y = Year
123
WW = Work Week
PIN ASSIGNMENT
1 Cathode
2 Gate
3 Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2000
December, 2000 – Rev. 0
1
Publication Order Number:
NCR169D/D
1 page  
NCR169D
TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL
H2A H2A
H2B H2B
H
H4 H5
F1
F2
P2 P2
P1
P
W2
L1 H1
W1 W
L
D
T1
T
T2
Figure 7. Device Positioning on Tape
Specification
Inches
Millimeter
Symbol
Item
Min Max Min Max
D Tape Feedhole Diameter
0.1496
0.1653
3.8
4.2
D2 Component Lead Thickness Dimension
0.015
0.020
0.38
0.51
F1, F2 Component Lead Pitch
0.0945
0.110
2.4
2.8
H Bottom of Component to Seating Plane
.059
.156
1.5
4.0
H1 Feedhole Location
0.3346
0.3741
8.5
9.5
H2A Deflection Left or Right
0 0.039 0
1.0
H2B Deflection Front or Rear
0 0.051 0
1.0
H4 Feedhole to Bottom of Component
0.7086
0.768
18
19.5
H5 Feedhole to Seating Plane
0.610
0.649
15.5
16.5
L Defective Unit Clipped Dimension
0.3346
0.433
8.5
11
L1 Lead Wire Enclosure
0.09842
–
2.5
–
P Feedhole Pitch
0.4921
0.5079
12.5
12.9
P1 Feedhole Center to Center Lead
0.2342
0.2658
5.95
6.75
P2 First Lead Spacing Dimension
0.1397
0.1556
3.55
3.95
T Adhesive Tape Thickness
0.06
0.08
0.15
0.20
T1 Overall Taped Package Thickness
– 0.0567 –
1.44
T2 Carrier Strip Thickness
0.014
0.027
0.35
0.65
W Carrier Strip Width
0.6889
0.7481
17.5
19
W1 Adhesive Tape Width
0.2165
0.2841
5.5
6.3
W2 Adhesive Tape Position
.0059
0.01968
.15
0.5
NOTES:
1. Maximum alignment deviation between leads not to be greater than 0.2 mm.
2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.
3. Component lead to tape adhesion must meet the pull test requirements.
4. Maximum non–cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.
5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.
6. No more than 1 consecutive missing component is permitted.
7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.
8. Splices will not interfere with the sprocket feed holes.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NCR169D.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NCR169D | General Purpose Sensitive Gate Silicon Controlled Rectifier | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |