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SDT452AP PDF даташит

Спецификация SDT452AP изготовлена ​​​​«SamHop Microelectronics» и имеет функцию, называемую «P-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв SDT452AP
Описание P-Channel Enhancement Mode Field Effect Transistor
Производители SamHop Microelectronics
логотип SamHop Microelectronics логотип 

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SDT452AP Даташит, Описание, Даташиты
S DT452AP
S amHop Microelectronics C orp.
Augus t , 2002
P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
-30V
ID
-5.3A
R DS (ON) ( m W ) TYP
52 @ VGS = -10V
85 @ VGS = -4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S OT-223 P ackage.
D
D SD
D
G
S
G
G
S OT-223
S OT-223 (J 23Z)
S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ TJ=125 C
-P ulsed a
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation @ Tc=25 C
Derate above 25 C
Operating and S torage Temperature R ange
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
-30
20
-5.3
-16
5.3
3
0.08
-65 to 150
Unit
V
V
A
A
A
W
W/ C
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
R JC
12
C /W
Thermal R esistance, Junction-to-Ambient
R JA
42
C /W
1









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SDT452AP Даташит, Описание, Даташиты
S DT452AP
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
P a ra meter
S ymbol
C ondition
Min Typ C Max Unit
5 OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage BVDSS VGS =0V, ID =-250uA -30
Zero Gate Voltage Drain Current IDSS VDS =-24V, VGS =0V
Gate-Body Leakage
ON CHARACTERISTICS b
IGSS VGS = 20V, VDS =0V
V
-1 uA
100 nA
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = -250uA -1 -1.5 -3 V
Drain-S ource On-S tate R esistance R DS(ON)
VGS = -10V, ID =-5.3A
VGS = -4.5V, ID = -4.2A
52 65 m ohm
85 100 m ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS c
ID(ON)
gFS
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS c
Turn-On Delay Time
tD(ON)
R ise Time
tr
Turn-Off Delay Time
tD(O F F )
Fall Time
tf
VDS = -5V, VGS = -10V
VDS =-10V, ID = - 5.3A
-16
-7
A
S
VDS =-15V, VGS = 0V
f =1.0MHZ
860 PF
470 PF
180 PF
VD = -15V,
ID = -1A,
VGEN = - 10V,
R GEN = 6 ohm
9 20 ns
10 40 ns
37 90 ns
23 110 ns
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
Qg VDS =-15V,ID = -5.3A,VGS =-10V
VDS =-15V,ID = -5.3A,VGS =-4.5V
Qgs VDS =-15V, ID = -5.3A,
Qgd VGS =-10V
15 20 nC
8.8 10.6 nC
3 nC
4 nC
2









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SDT452AP Даташит, Описание, Даташиты
S DT452AP
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
DRAIN-SOURCE DIODE CHARACTERISTICS b
Diode Forward Voltage
VSD VGS = 0V, Is =-5.3A
Min Typ C Max Unit
-0.84 -1.3 V
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
10
-V GS =10,9,8,7,6V
8
-V GS =5V
6
4
2
0
0 0.5 1.0 1.5 2.0 2.5 3.0
-V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
20
-55 C
16 25 C
T j=125 C
12
8
4
0
0 0.5 1 1.5 2 2.5 3
-V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
3000
2500
2000
1500
1000
500
0
0
5 10 15
C is s
C oss
C rss
20 25 30
-V DS , Drain-to S ource Voltage (V )
F igure 3. C apacitance
1.8
V GS =-10V
1.6 ID=-5.3A
1.4
1.2
1.0
0.8
0.6
-50 0 50 100 150
T j, J unction T emperature ( C )
F igure 4. On-R es is tance Variation with
Te mpe ra ture
5
3










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Номер в каталогеОписаниеПроизводители
SDT452APP-Channel Enhancement Mode Field Effect TransistorSamHop Microelectronics
SamHop Microelectronics

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