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PDF NE68939-T1 Data sheet ( Hoja de datos )
| Número de pieza | NE68939-T1 | |
| Descripción | NPN Silicon Transistor | |
| Fabricantes | NEC | |
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PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL TRANSISTOR NE68939
FEATURES
• OUTPUT POWER AT 1dB COMPRESSION POINT:
24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB,
Duty 1/8
• 4 PIN MINI MOLD PACKAGE: NE68939
DESCRIPTION
The NE68939 is a low voltage, NPN Silicon Bipolar Transistor
for pulsed power applications. The device is designed to op-
erate from a 3.6 V supply, and deliver over 1/4 watt of power
output at frequencies up to 2.0 GHZ with a 1:8 duty cycle.
These characteristics make it an ideal device for TX driver
stage in a 1.9 GHZ digital cordless telephone (DECT or PHS).
The part is supplied in a SOT-143 (SC-61) 4-pin Mini-mold
package and is available on tape and reel.
The NE68939 transistors are manufactured to NEC's strin-
gent quality assurance standards to ensure highest reliability
and consistent superior performance.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 39
+0.2
2.8 -0.3
+0.2
1.5 -0.1
+0.10
0.4 -0.05
(LEADS 2, 3, 4)
2.9 ± 0.2 0.95
0.85
2
3
1.9
1
+0.10
0.6 -0.05
1.1+-00..21 0.8
4
1) Collector
2) Emitter
3) Base
4) Emitter
0.16
+0.10
-0.06
5˚ 5˚
0 to 0.1
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
SYMBOLS
ICBO
IEBO
hFE
P-1
Gp
ηC
TON
PART NUMBER
PACKAGE CODE
PARAMETERS
Collector Cutoff Current, VCB = 5 V, IE = 0
Emitter Cutoff Current, VEB = 1 V, IC = 0
DC Current Gain, VCE = 3.6 V, IC = 100 mA
Output Power
Power Gain
Collector Efficiency
VCE = 3.6 V, f = 1.9 GHZ
ICq = 2 mA (Class AB)
Duty 1/8
Maximum Device On Time
UNITS
µA
µA
dBm
dB
%
MS
NE68939
39
MIN TYP MAX
2.5
2.5
30
24.5
6.5 8
50 62
10.0
California Eastern Laboratories
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