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OPB815L PDF даташит

Спецификация OPB815L изготовлена ​​​​«ETC» и имеет функцию, называемую «Deep Gap Slot ted Op ti cal Switch».

Детали детали

Номер произв OPB815L
Описание Deep Gap Slot ted Op ti cal Switch
Производители ETC
логотип ETC логотип 

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OPB815L Даташит, Описание, Даташиты
Product Bulletin OPB815L
July 1997
Deep Gap Slotted Optical Switch
Type OPB815L
Features
Non-contact switching
Printed circuit board mounting
0.375" (9.53 mm) wide slot
0.430" (10.92 mm) deep slot
Description
The OPB815L consists of an infrared
emitting diode and an NPN silicon
phototransistor mounted in a low cost
plastic housing on opposite sides of a
0.375" (9.53 mm) wide, 0.430" (10.92
mm) deep slot. Phototransistor switching
takes place whenever an opaque object
passes through the slot. Available with
wire leads as OPB815W.
Absolute Maximum Ratings (TA = 25o C unless otherwise noted)
Storage and Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . -40o C to +85o C
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240o C(1)
Input Diode
Continuous Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Peak Forward Current (1 µs pulse width, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . 3.0 A
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(2)
Output Phototransistor
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emitter-Collector Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max when flow soldering.
(2) Derate linearly 1.67 mW/o C above 25o C.
(3) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in
chlorinated hydrocarbons and ketones.
(4) All parameters tested using pulse technique.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
12-80
(972) 323-2200
Fax (972) 323-2396









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OPB815L Даташит, Описание, Даташиты
Type OPB815L
Electrical Characteristics (TA = 25o C unless otherwise noted)
SYMBOL
PARAMETER
Input Diode
VF Forward Voltage
IR Reverse Current
Output Phototransistor
V(BR)CEO Collector-Emitter Breakdown Voltage
V(BR)ECO Emitter-Collector Breakdown Voltage
ICEO
Collector-Emitter Dark Current
Coupled
VCE(SAT) Collector-Emitter Saturation Voltage
IC(ON) On-State Collector Current
MIN MAX UNITS
TEST CONDITIONS
1.70 V IF = 20 mA
100 µA VR = 2.0 V
30 V IC = 1.00 mA
5.0 V IE = 100 µA
100 nA VCE = 10.0 V, IF = 0, Ee = 0
0.40 V IC = 500 µA, IF = 20 mA
3.5 16.0 mA VCE = 10.0 V, IF = 20 mA
Typical Performance Curves
Collector Current vs LED Drive
Typical
IF - mA
Normalized IC(ON) vs
Distance (X Axis Blocked)
Typical
Normalized IC(ON) vs
Distance (Y Axis Blocked)
Typical
Distance - inches
Distance - inches
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible
Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006
(972)323-2200
Fax (972)323-2396
12-81










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Номер в каталогеОписаниеПроизводители
OPB815LDeep Gap Slot ted Op ti cal SwitchETC
ETC
OPB815LDeep Gap Slot ted Op ti cal SwitchETC
ETC
OPB815WDEEP GAP SLOTTED OPTICAL SWITCHETC
ETC

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