CD5712 PDF даташит
Спецификация CD5712 изготовлена «Compensated Deuices» и имеет функцию, называемую «SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION». |
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Детали детали
Номер произв | CD5712 |
Описание | SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION |
Производители | Compensated Deuices |
логотип |
2 Pages
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• 1N5711 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/444
• 1N5712 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/445
• SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION
• SILICON DIOXIDE PASSIVATED
• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
WITH THE EXCEPTION OF SOLDER REFLOW
MAXIMUM RATINGS
Operating Temperature: -55°C to +125°C
Storage Temperature: -65°C to +150°C
CD2810
CD5711
CD5712
CD6857
CD6858
CD6916
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
CDI
TYPE
NUMBER
CD2810
CD5711
CD5712
CD6857
CD6858
CD6916
MINIMUM
BREAKDOWN
VOLTAGE
(2)
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
VBR @ 10 µ A VF @ 1 mA
VF @ IF
VOLTS
VOLTS VOLTS @ mA
20 0.41 1.0 @ 35
70 0.41 1.0 @15
20 0.41 1.0 @ 35
20 0.35 0.75 @ 35
70 0.36 0.65 @ 15
0.27 @ 0.1
40 0.34 0.34 @ 1.0
(2) 0.47 @ 10.0
MAXIMUM REVERSE
LEAKAGE CURRENT
MAXIMUM
FIGURE
CAPACITANCE @
V R = 0 VOLTS NUMBER
f = 1.0 MHZ
1R @ VR
nA VOLTS
100 15
200 50
150 16
150 16
200 50
100 1
200 20
500 40
CT
PICO FARADS
1.2
2.0
1.2
4.5
4.5
5
1
2
1
2
2
2
NOTES: (1) Effective Minority Carrier Lifetime (τ) is 100 Pico Seconds
(2) CD6916 V BR measured @ 500 nanoamps
BACKSIDE IS CATHODE
FIGURE 1
BACKSIDE IS CATHODE
FIGURE 2
DESIGN DATA
METALLIZATION:
Top: (Anode)...................... ..Al
Back: (Cathode)................. Au
o
AL THICKNESS.................25,000 A Min
o
GOLD THICKNESS... ..........4,000 A Min
CHIP THICKNESS............. .........10 Mils
TOLERANCES: ALL Dimensions
+ 2 mils, Except Anode Pad Where
Tolerance is + 0.5 mils.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: [email protected]
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CD2810, CD5711, CD5712, CD6857, CD6858
and CD6916
100
10
1.0
.1
.01
0
.2 .4 .6 .8 1.0 1.2
VF – FORWARD VOLTAGE (V)
Figure 1.
I-V Curve Showing Typical Forward
Voltage Variation with Temperature for the
CD5712 and CD2810 Schottky Diodes.
10,000
1000
100
10
1.0
0 5.0 10 15 20 25 30
VR – REVERSE VOLTAGE (V)
(PULSED)
Figure 2.
CD5712 and CD2810
Typical Variation of Reverse Current
(IR) vs. Reverse Voltage (VR) at Various
Temperatures.
50
10
5
1
.5
.1
.05
.01
0
.2 .4 .6
.8 1.0 1.2
VF – FORWARD VOLTAGE (V)
Figure 3.
I-V Curve Showing Typical Forward Voltage
Variation with Temperature for Schottky Diode
CD5711.
100,000
10,000
1000
100
10
1
0 10 20 30 40 50 60
VR – REVERSE VOLTAGE (V)
(PULSED)
Figure 4.
CD5711 Typical Variation of Reverse Current
(IR) vs. Reverse Voltage (VR) at Various
Temperatures.
1000
100
10
1
.1 1.0 10
IF – FORWARD CURRENT (mA)
(PULSED)
Figure 5.
Typical DynamiC Resistance (RD) vs.
Forward Current (IF).
100
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Номер в каталоге | Описание | Производители |
CD5711 | SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION | Compensated Deuices |
CD5711 | SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION | Deuices Incorporated |
CD5712 | SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION | Compensated Deuices |
CD5712 | SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION | Deuices Incorporated |
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