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PDF S1230AB-70 Data sheet ( Hoja de datos )
| Número de pieza | S1230AB-70 | |
| Descripción | 256k Nonvolatile SRAM | |
| Fabricantes | Dallas Semiconducotr | |
| Logotipo |  |
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www.dalsemi.com
FEATURES
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Replaces 32k x 8 volatile static RAM,
EEPROM or Flash memory
Unlimited write cycles
Low-power CMOS
Read and write access times as fast as 70 ns
Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
Full ±10% VCC operating range (DS1230Y)
Optional ±5% VCC operating range
(DS1230AB)
Optional industrial temperature range of
-40°C to +85°C, designated IND
JEDEC standard 28-pin DIP package
New PowerCap Module (PCM) package
- Directly surface-mountable module
- Replaceable snap-on PowerCap provides
lithium backup battery
- Standardized pinout for all nonvolatile
SRAM products
- Detachment feature on PowerCap allows
easy removal using a regular screwdriver
DS1230Y/AB
256k Nonvolatile SRAM
PIN ASSIGNMENT
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28 VCC
27 WE
26 A13
25 A8
24 A9
23 A11
22 OE
21 A10
20 CE
19 DQ7
18 DQ6
17
DQ5
16 DQ4
15 DQ3
28-Pin ENCAPSULATED PACKAGE
740-mil EXTENDED
NC
NC
NC
NC
VCC
WE
OE
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
GND
1
2
3
4
5
6
7
8
9
10
11
12
13 GND VBAT
14
15
16
17
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
34-Pin POWERCAP MODULE (PCM)
(USES DS9034PC POWERCAP)
NC
NC
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
PIN DESCRIPTION
A0 - A14
- Address Inputs
DQ0 - DQ7
- Data In/Data Out
CE - Chip Enable
WE - Write Enable
OE - Output Enable
VCC
GND
- Power (+5V)
- Ground
NC - No Connect
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111899
1 page  
AC ELECTRICAL CHARACTERISTICS (cont'd)
DS1230AB-120 DS1230AB-150
PARAMETER SYMBOL DS1230Y-120 DS1230Y-150
MIN MAX MIN MAX
Read Cycle
Time
tRC 120
150
Access Time
OE to Output
Valid
tACC
tOE
120 150
60 70
CE to Output
Valid
tCO
120 150
OE or CE to
tCOE
5
Output Active
5
Output High Z
from
Deselection
tOD
35 35
Output Hold
tOH 5
from Address
Change
5
Write Cycle
Time
tWC 120
150
Write Pulse
Width
tWP 90
100
Address Setup tAW 0
Time
0
Write Recovery
Time
tWR1
tWR2
5
15
5
15
Output High Z
tODW
35
35
from WE
Output Active tOEW 5
from WE
5
Data Setup
Time
tDS 50
60
Data Hold Time
tDH1
tDH2
0
10
0
10
DS1230AB-200
DS1230Y-200
MIN MAX
200
200
100
200
5
35
5
200
100
0
5
15
35
5
80
0
10
DS1230Y/AB
UNITS NOTES
ns
ns
ns
ns
ns 5
ns 5
ns
ns
ns 3
ns
ns 12
13
ns 5
ns 5
ns 4
ns 12
13
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5 Page 
DS1230Y/AB
DS1230Y/AB NONVOLATILE SRAM, 34-PIN POWERCAP MODULE WITH
POWERCAP
PKG
DIM
A
B
C
D
E
F
G
MIN
0.920
0.955
0.240
0.052
0.048
0.015
0.020
INCHES
NOM
0.925
0.960
0.245
0.055
0.050
0.020
0.025
MAX
0.930
0.965
0.250
0.058
0.052
0.025
0.030
ASSEMBLY AND USE
Reflow soldering
Dallas Semiconductor recommends that PowerCap Module bases experience one pass through solder
reflow oriented label-side up (live-bug).
Hand soldering and touch-up
Do not touch soldering iron to leads for more than 3 seconds. To solder, apply flux to the pad, heat the
lead frame pad and apply solder. To remove part, apply flux, heat pad until solder reflows, and use a
solder wick.
LPM replacement in a socket
To replace a Low Profile Module in a 68-pin PLCC socket, attach a DS9034PC PowerCap to a module
base then insert the complete module into the socket one row of leads at a time, pushing only on the
corners of the cap. Never apply force to the center of the device. To remove from a socket, use a PLCC
extraction tool and ensure that it does not hit or damage any of the module IC components. Do not use
any other tool for extraction.
11 of 12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet S1230AB-70.PDF ] | |
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