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S16S60 PDF даташит

Спецификация S16S60 изготовлена ​​​​«Mospec Semiconductor» и имеет функцию, называемую «SCHOTTKY BARRIER RECTIFIERS».

Детали детали

Номер произв S16S60
Описание SCHOTTKY BARRIER RECTIFIERS
Производители Mospec Semiconductor
логотип Mospec Semiconductor логотип 

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S16S60 Даташит, Описание, Даташиты
MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier
metal. These state-of-the-art geometry features epitaxial construction
with oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency rectification, or as free wheeling and polarity
protection diodes.
Features
Low Forward Voltage.
Low Switching noise.
High Current Capacity
Guarantee Reverse Avalanche.
Guard-Ring for Stress Protection.
Low Power Loss & High efficiency.
150 Operating Junction Temperature
Low Stored Charge Majority Carrier Conduction.
Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
ESD: 8KV(Min.) Human-Body Model
In compliance with EU RoHs 2002/95/EC directives
S16S30 thru S16S60
SCHOTTKY BARRIER
RECTIFIERS
16 AMPERES
30-60 VOLTS
TO-263 (D2-PAK)
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
S16S
Symbol
Unit
30 35 40 45 50 60
VRRM
VRWM 30 35 40 45 50 60
VR
V
RMS Reverse Voltage
Average Rectifier Forward Current
Total Device (Rated VR), TC=100
Peak Repetitive Forward Current
(Rate VR, Square Wave, 20kHz)
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
halfware, single phase, 60Hz)
Operating and Storage Junction
Temperature Range
VR(RMS) 21
IF(AV)
IFM
IFSM
TJ , Tstg
25 28 32 35
8.0
16
16
150
-65 to +150
42
V
A
A
A
ELECTRIAL CHARACTERISTICS
Characteristic
Symbol
Maximum Instantaneous Forward Voltage
( IF =8 Amp TC = 25 )
( IF =8 Amp TC = 100 )
Typical Thermal Resistance junction to
case
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25 )
( Rated DC Voltage, TC = 125 )
VF
Rθ j-c
IR
30
S16S
35 40 45
0.55
0.48
3.8
0.5
20
50 60
0.70
0.60
Unit
V
/w
mA
DIM MILLIMETERS
MIN MAX
A 8.12 8.92
B 9.90 10.30
C 4.23 4.83
D 0.51 0.89
E 1.27 1.53
G 2.54 BSC
H 2.03 2.79
J 0.31 0.51
K 2.29 2.79
S 14.60 15.88
V 1.57 1.83
X --- 1.40









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S16S60 Даташит, Описание, Даташиты
S16S30 Thru S16S60
FIG-1 FORWARD CURRENT DERATING CURVE
FIG-2 TYPICAL FORWARD CHARACTERISITICS
S16S30-S16S45
S16S50-S16S60
CASE TEMPERATURE ( )
FIG-3 TYPICAL REVERSE CHARACTERISTICS
Tj=100oc
Tj=75oc
Tj=25oc
PERCENT OF RATED REVERSE VOLTAGE ( )
FIG-5 PEAK FORWARD SURGE CURRENT
FORWARD VOLTAGE (Volts)
FIG-4 TYPICAL JUNCTION CAPACITANCE
S16S30-S16S45
S16S50-S16S60
REVERSE VOLTAGE (Volts)
NUMBER OF CYCLES AT 60 Hz










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Номер в каталогеОписаниеПроизводители
S16S60SCHOTTKY BARRIER RECTIFIERSMospec Semiconductor
Mospec Semiconductor

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