S1T2425A01-D0B0 PDF даташит
Спецификация S1T2425A01-D0B0 изготовлена «Samsung semiconductor» и имеет функцию, называемую «SPEECH NETWORK WITH DIALER INTERFACE». |
|
Детали детали
Номер произв | S1T2425A01-D0B0 |
Описание | SPEECH NETWORK WITH DIALER INTERFACE |
Производители | Samsung semiconductor |
логотип |
7 Pages
No Preview Available ! |
SPEECH NETWORK WITH DIALER INTERFACE
INTRODUCTION
The S1T2425A is telephone speech network integrated circuit which
includes transmit amp, receive amp, side tone amp, DC loop interface
function, DTMF input, voltage regulator for speech, a regulated output
voltage for a dialer, and equalization circuit .
18−DIP−300A
FEATURES
• Low voltage operation (1.5V : speech)
• Transmit, Receive, Side tone and DTMF level
are controlled by external resistors
• Regulated voltage for dialer
• Loop length equalization
• MUTE function
• Linear interface for DTMF
ORDERING INFORMATION
Device
S1T2425A01-D0B0
Package
18−DIP−300A
Operating Temperature
− 20 to + 60°C
PIN CONFIGURATION
MIC 1
18 MT
TXI 2
17 MS
TXO 3
16 TI
STA 4
15 VDD
CC 5 S1T2425A 14 V+
EQ 6
13 LR
RXI 7
12 LC
RXO 8
RMT 9
11 VR
10 V-
S1T2425A
1
No Preview Available ! |
S1T2425A
SPEECH NETWORK WITH DIALER INTERFACE
ABSOLUTE MAXIMUM RATINGS
Characteristic
V+ Voltage
VDD (V+ = 0)
MT,MS inputs
VLR
Storage Temperature
Symbol
VC
VDD
VM
VLR
TSTG
Value
−1.0 to +18
−1.0 to +6
−1.0 to VDD +1
−1.0V to V+ -3.0
−65 to +150
RECOMMENDED OPERATING CONDITIONS (TA = 25°C)
Characteristic
ITXO (Instantaneous)
V+ (Voltage :Speech Mode
Tone Dialing Mode
Operating Temperature
Symbol
ICC
V+ (SM)
V+(TM)
TORR
Value
0 to 10
+1.5 to +15
+3.3 to +15
−20 to +60
Unit
V
V
V
V
°C
Unit
mA
V
V
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Characteristic
Symbol
Test Conditions
SYSTEM SPECTIFICATIONS (Refer to Fig.3 and Fig.4)
TX Gain from VS to V+
Gain Change
Distortion
Output Noise
RX
VRXO / VS
RX Gain Change
Distortion
DTMF Driver V+ / VIN
Sidetone Level VRXO / V+
Sidetone rejection
{ VRXO (figure 4)} dB
V+
−
{VRXO
V+
(figure 3)}dB
GV (TX)
∆GV (TX)
THD TX
VNO (TX)
GV (RX)
∆GV (RX)
THD RX
GV (MF)
GV (ST)
RST
Figure (IL = 20mA)
IL = 60mA
f = 1.0kHZ, IL = 20mA
(See Figure.4)
IL = 60mA
IL = 20mA
IL = 20mA
IL = 60mA
IL = 20mA
Min.
Typ. Max. Unit
28
−6.0
−
−
29.5
−4.5
2.0
11
31
−3.6
−
−
dB
dB
%
dBmc
−16
−5.0
−
3.2
−
−
−15
−3.0
2.0
4.8
−28
−13
−13
−2.0
−
6.2
−
−
dB
dB
%
dB
dB
12 18 − dB
2
No Preview Available ! |
SPEECH NETWORK WITH DIALER INTERFACE
S1T2425A
ELECTRICAL CHARACTERISTICS (Ta = 25°C) (Continued)
Characteristic
Symbol
Test Conditions
Tip-Ring Voltage
(including polarity guard bridge
drop of 1.4V)
(Speech Mode)
AC impedance
Speech mode (incl. C6,see fig.
4)
Zac = (600)V +/ (VS - V+)
Tone Mode (including C6)
SYSTEM AMPLIFIERS
VTR
Zac
IL = 5.0mA
IL = 10mA
IL = 20mA
IL = 40mA
IL = 60mA
IL = 20mA
IL = 60mA
20mA < IL , 60mA
TX Gain
TXO Bias Voltage
TXO Bias Voltage
TXO Bias Voltage
TXO Bias Voltage
TXI input Resistance
RX
RXO Bias voltage
RXO Source current
RXO Source current
RXO High Voltage
RXO Low Voltage
SIDETONE AMPLIFIER
GV (TX)
VBIAS (SPM)
VBIAS (TM)
VOL (SPM)
VOL (SPM)
RI (TXI)
TXI to TXO
Speech/Pulse Mode
Tone Mode
Speech/Pulse Mode
Speech/Pulse Mode
VBIAS (AM)
ISOURCE (SM)
ISOURCE (PTM)
VOH (AM)
VOL (AM)
All Mode
Speech Mode
Pulse/tone Mode
All Mode
All Mode
Gain (TXO to STA)
Speech Mode
Speech Mode
Pulse Mode
Pulse Mode
Gv(STA)
STA Bias Voltage
VBIAS (STA)
MICROPHONE, RECEIVER CONTROLS
@VLR = 0.5V
@VLR = 2.5V
@VLR = 0.2V
@VLR = 1.0V
All Modes
MIC Saturation Voltage
MIC Leakage Current
MAT Resistance
RMT Delay
EQUALIZATION AMPLIFIER
VSAT (MIC)
ILKG (MIC)
RRMT (SM)
RRMT (DM)
tD (RMT)
Speech Mode,1 = 500µA
Dialing Mode,Pin 1=3.0V
Speech Mode
Dialing Mode
Dialing to Speech
GAIN (V + to EQ)
Speech Mode
Speech Mode
Pulse Mode
Pulse Mode
GV (EQ)
@ VLR = 0.5V
@ VLR = 2.5V
@ VLR = 0.2V
@ VLR = 1.0V
Min.
−
−
−
−
−
−
−
−
Typ.
2.4
3.9
4.6
5.6
6.6
Max.
−
−
−
−
−
750
300
1650
−
−
−
24
0.45
VR −25
VR −25
−
−
26
0.52
VR −5.0
VR −5.0
125
10
28
0.60
−
−
250
−
0.45
1.5
200
VR −100
−
0.52
2.0
400
VR −50
50
0.60
−
−
−
150
− −15 −
− −21 −
− −15 −
− −21 −
0.65 0.8 0.9
− 50 125
− 0 5.0
− 8.0 15
5.0 10 18
2.0 4.0 20
− −12 −
− −2.5 −
− −12 −
− −2.5 −
Unit
VDC
W
dB
xVR
mV
mV
mV
kΩ
xVR
mA
µA
mV
mV
dB
xVR
mV
µA
Ω
kΩ
ms
dB
3
Скачать PDF:
[ S1T2425A01-D0B0.PDF Даташит ]
Номер в каталоге | Описание | Производители |
S1T2425A01-D0B0 | SPEECH NETWORK WITH DIALER INTERFACE | Samsung semiconductor |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |