S21MD4V PDF даташит
Спецификация S21MD4V изготовлена «Sharp Electrionic Components» и имеет функцию, называемую «Built-in Zero-cross Circuit/ High Noise Resistance Type Phototriac Coupler». |
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Детали детали
Номер произв | S21MD4V |
Описание | Built-in Zero-cross Circuit/ High Noise Resistance Type Phototriac Coupler |
Производители | Sharp Electrionic Components |
логотип |
4 Pages
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S21MD4V
S21MD4V
Built-in Zero-cross Circuit, High Noise
Resistance Type Phototriac Coupler
..g Lead forming type of S21MD4V is also available. (S21MD4W )
gg TUV ( DIN-VDE0884 ) approved type is also available as an option.
s Features
s Outline Dimensions
( Unit : mm)
1. Built-in zero-cross circuit
2. High critical rate of rise of OFF-state volt-
age ( dV/dt : MIN. 100V/ µs )
3. High repetitive peak OFF-state voltage
( VDRM : MIN. 600V )
4. Isolation voltage between input and output
Viso : 5 000Vrms
5. UL recognized, file No. E64380 ( S21MD4V/ S21MD4W)
g S21MD4V is for 200V line
s Applications
1. For triggering medium/high power triac
2.54± 0.25
65
4
Internal connection
diagram
6 54
S21MD4V
Zero-cross
circuit
123
Anode
mark
0.9± 0.2
1.2± 0.3
7.12±0.5
1 23
7.62± 0.3
1 Anode
2 Cathode
3 NC
4 Anode/
Cathode
5 No external
connection
6 Anode/
Cathode
0.5±0.1
0.26± 0.1
θ : 0 to 13 ˚
θ
s Absolute Maximum Ratings
Parameter
Input
Output
Forward current
Reverse voltage
RMS ON-state current
∗1Peak one cycle surge current
Repetitive peak OFF-state voltage
∗2Isolation voltage
Operating temperature
Storage temperature
∗3Soldering temperature
∗1 Sine wave
∗2 40 to 60% RH, AC for 1 minute, f = 60HZ
∗3 For 10 seconds
Symbol
IF
VR
IT
I surge
V DRM
Viso
T opr
T stg
T sol
( Ta = 25˚C)
Rating
50
6
100
1.2
600
5 000
- 30 to + 100
- 55 to + 125
260
Unit
mA
V
mA rms
A
V
Vrms
˚C
˚C
˚C
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
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S21MD4V
s Electro-optical Characteristics
Input
Output
Transfer
character
istics
Parameter
Forward voltage
Reverse current
Repetitive peak OFF-state current
ON-state voltage
Holding current
Critical rate of rise of OFF-state voltage
Zero-cross voltage
Minimum trigger current
Isolation resistance
Turn-on time
Symbol
Conditions
VF IF = 20mA
IR V R = 3V
I DRM V DRM = Rated
VT IT = 100mA
IH V D = 6V
dV/dt VDRM = 1/ 2 Rated
VOX Resistance load, I F = 15mA
I FT VD = 6V, R L = 100Ω
R ISO DC500V, 40 to 60% RH
t on V D = 6V, R L = 100Ω , I F = 20mA
MIN.
-
-
-
-
0.1
100
-
-
5 x 1010
-
TYP.
1.2
-
-
1.7
1
-
-
-
1011
20
( Ta = 25˚C)
MAX.
1.4
10- 5
10- 6
2.5
3.5
-
35
15
-
50
Unit
V
A
A
V
mA
V/ µ s
V
mA
Ω
µs
Fig. 1 RMS ON-state Current vs.
Ambient Temperature
0.10
0.05
0
-30 0 20 40 60 80 100
Ambient temperature T a (˚C)
Fig. 3 Forward Current vs. Forward Voltage
200
100
T a = 100˚C
50 75˚C
50˚C
20
10
25˚C
0˚C
- 30˚C
5
2
1
0 0.5 1.0 1.5 2.0 2.5 3.0
Forward voltage V F (V)
Fig. 2 Forward Current vs.
Ambient Temperature
70
60
50
40
30
20
10
0
- 30 0 25 50 75 100 125
Ambient temperature T a (˚C)
Fig. 4 Minimum Trigger Current vs.
Ambient Temperature
14
V D = 6V
RL = 100Ω
12
10
8
6
4
2
0
-30 0 20 40 60 80 100
Ambient temperature T a (˚C)
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Fig. 5 Relative Repetitive Peak OFF-state
Voltage vs. Ambient Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-30
0 20 40 60 80
Ambient temperature T a (˚C)
100
Fig. 7 Holding Current vs.
Ambient Temperature
10
5
V D = 6V
2
1
0.5
0.2
0.1
- 30
0 20 40 60 80
Ambient temperature T a (˚C)
100
Fig. 9 Repetitive Peak OFF-state Current vs.
Ambient Temperature
10- 5
5 V DRM = Rated
2
10- 6
5
2
10- 7
5
2
10- 8
5
2
10- 9
5
- 30
0 20 40 60 80
Ambient temperature T a (˚C)
100
S21MD4
Fig. 6 ON-state Voltage vs.
Ambient Temperature
2.0
IT = 100mA
1.9
1.8
1.7
1.6
1.5
1.4
- 30
0 20 40 60 80
Ambient temperature T a (˚C)
100
Fig. 8 Repetitive Peak OFF-state Current vs.
OFF-state Voltage
2
T a = 25˚C
10- 7
5
2
10- 8
5
100 200 300 400 500
OFF-state voltage V D (V)
Fig.10 Zero-cross Voltage vs.
Ambient Temperature
R load
IF = 15mA
25
600
20
15
- 30
0 20 40 60 80
Ambient temperature T a (˚C)
100
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