DataSheet26.com

W27E512 PDF даташит

Спецификация W27E512 изготовлена ​​​​«Winbond» и имеет функцию, называемую «64K X 8 ELECTRICALLY ERASABLE EPROM».

Детали детали

Номер произв W27E512
Описание 64K X 8 ELECTRICALLY ERASABLE EPROM
Производители Winbond
логотип Winbond логотип 

16 Pages
scroll

No Preview Available !

W27E512 Даташит, Описание, Даташиты
W27E512
64K × 8 ELECTRICALLY ERASABLE EPROM
GENERAL DESCRIPTION
The W27E512 is a high speed, low power Electrically Erasable and Programmable Read Only
Memory organized as 65536 × 8 bits that operates on a single 5 volt power supply. The W27E512
provides an electrical chip erase function.
FEATURES
High speed access time:
45/55/70/90/120/150 nS (max.)
Read operating current: 30 mA (max.)
Erase/Programming operating current
30 mA (max.)
Standby current: 1 mA (max.)
Single 5V power supply
+14V erase/+12V programming voltage
Fully static operation
All inputs and outputs directly TTL/CMOS
compatible
Three-state outputs
Available packages: 28-pin 600 mil DIP, 330 mil
SOP, TSOP and 32-pin PLCC
PIN CONFIGURATIONS
BLOCK DIAGRAM
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
Q0
Q1
Q2
GND
1 28
2 27
3 26
4 25
5 24
6 28-pin 23
7 DIP 22
8 21
9 20
10 19
11 18
12 17
13 16
14 15
VCC
A14
A13
A8
A9
A11
OE/Vpp
A10
CE
Q7
Q6
Q5
Q4
Q3
AA VAA
A1 1NC1 1
7 2 5CC4 3
432 1 3 3 3
A6 5
2 1 0 29 A8
A5 6
28 A9
A4 7
A3 8
A2 9
32-pin
PLCC
27 A11
26 NC
25 OE/Vpp
A1 10
A0 11
24 A10
23 CE
NC
Q0
12 1
13 4
1
5
1
6
11
78
1
9
2 22
0 21
Q7
Q6
OE/Vpp
A11
A9
A8
A13
A14
VCC
A15
A12
A7
A6
A5
A4
A3
Q QGN QQQ
1 2NC 3 4 5
D
1 28
2 27
3 26
4 25
5 24
6 23
7
28-pin
22
8
TSOP
21
9 20
10 19
11 18
12 17
13 16
14 15
A10
CE
Q7
Q6
Q5
Q4
Q3
GND
Q2
Q1
Q0
A0
A1
A2
CE
OE/VPP
CONTROL
OUTPUT
BUFFER
Q0
.
.
Q7
A0
.
DECODER
.
A15
VCC
GND
CORE
ARRAY
PIN DESCRIPTION
SYMBOL
A0A15
Q0Q7
CE
OE /VPP
VCC
GND
NC
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable
Output Enable, Program/Erase
Supply Voltage
Power Supply
Ground
No Connection
Publication Release Date: June 2000
- 1 - Revision A9









No Preview Available !

W27E512 Даташит, Описание, Даташиты
W27E512
FUNCTIONAL DESCRIPTION
Read Mode
Like conventional UVEPROMs, the W27E512 has two control functions, both of which produce data
at the outputs. CE is for power control and chip select. OE/VPP controls the output buffer to gate data
to the output pins. When addresses are stable, the address access time (TACC) is equal to the delay
from CE to output (TCE), and data are available at the outputs TOE after the falling edge of OE/VPP,
if TACC and TCE timings are met.
Erase Mode
The erase operation is the only way to change data from "0" to "1." Unlike conventional UVEPROMs,
which use ultraviolet light to erase the contents of the entire chip (a procedure that requires up to half
an hour), the W27E512 uses electrical erasure. Generally, the chip can be erased within 100 mS by
using an EPROM writer with a special erase algorithm.
Erase mode is entered when OE/VPP is raised to VPE (14V), VCC = VCE (5V), A9 = VPE (14V), A0
low, and all other address pins low and data input pins high. Pulsing CE low starts the erase
operation.
Erase Verify Mode
After an erase operation, all of the bytes in the chip must be verified to check whether they have been
successfully erased to "1" or not. The erase verify mode ensures a substantial erase margin if VCC =
VCE (3.75V), CE low, and OE/VPP low.
Program Mode
Programming is performed exactly as it is in conventional UVEPROMs, and programming is the only
way to change cell data from "1" to "0." The program mode is entered when OE /VPP is raised to VPP
(12V), VCC = VCP (5V), the address pins equal the desired addresses, and the input pins equal the
desired inputs. Pulsing CE low starts the programming operation.
Program Verify Mode
All of the bytes in the chip must be verified to check whether they have been successfully
programmed with the desired data or not. Hence, after each byte is programmed, a program verify
operation should be performed. The program verify mode automatically ensures a substantial
program margin. This mode will be entered after the program operation if OE/VPP low and CE low.
Erase/Program Inhibit
Erase or program inhibit mode allows parallel erasing or programming of multiple chips with different
data. When CE high, erasing or programming of non-target chips is inhibited, so that except for the
CE and OE/VPP pins, the W27E512 may have common inputs.
-2-









No Preview Available !

W27E512 Даташит, Описание, Даташиты
W27E512
Standby Mode
The standby mode significantly reduces VCC current. This mode is entered when CE high. In standby
mode, all outputs are in a high impedance state, independent of OE /VPP.
Two-line Output Control
Since EPROMs are often used in large memory arrays, the W27E512 provides two control inputs for
multiple memory connections. Two-line control provides for lowest possible memory power
dissipation and ensures that data bus contention will not occur.
System Considerations
An EPROM's power switching characteristics require careful device decoupling. System designers are
interested in three supply current issues: standby current levels (ISB), active current levels (ICC), and
transient current peaks produced by the falling and rising edges of CE. Transient current magnitudes
depend on the device output's capacitive and inductive loading. Two-line control and proper
decoupling capacitor selection will suppress transient voltage peaks. Each device should have a 0.1 µ
F ceramic capacitor connected between its VCC and GND. This high frequency, low inherent-
inductance capacitor should be placed as close as possible to the device. Additionally, for every eight
devices, a 4.7 µF electrolytic capacitor should be placed at the array's power supply connection
between VCC and GND. The bulk capacitor will overcome voltage slumps caused by PC board trace
inductances.
TABLE OF OPERATING MODES
(VPP = 12V, VPE = 14V, VHH = 12V, VCP = 5V, VCE = 5V, X = VIH or VIL)
MODE
Read
Output Disable
Standby (TTL)
Standby (CMOS)
Program
Program Verify
Program Inhibit
Erase
Erase Verify
Erase Inhibit
Product Identifier-manufacturer
Product Identifier-device
CE
VIL
VIL
VIH
VCC ±0.3V
VIL
VIL
VIH
VIL
VIL
VIH
VIL
VIL
OE /VPP
VIL
VIH
X
X
VPP
VIL
VPP
VPE
VIL
VPE
VIL
VIL
PINS
A0 A9
XX
XX
XX
XX
XX
XX
XX
VIL VPE
XX
XX
VIL VHH
VIH VHH
VCC
VCC
VCC
VCC
VCC
VCP
VCC
VCP
VCE
3.75
VCE
VCC
VCC
OUTPUTS
DOUT
High Z
High Z
High Z
DIN
DOUT
High Z
DIH
DOUT
High Z
DA (Hex)
08 (Hex)
Publication Release Date: June 2000
- 3 - Revision A9










Скачать PDF:

[ W27E512.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
W27E51264K X 8 ELECTRICALLY ERASABLE EPROMWinbond
Winbond

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск