W986408CH Datasheet PDF - Winbond
| Part Number | W986408CH | |
| Description | 2M x 8BIT x 4 BANKS SDRAM | |
| Manufacturers | Winbond | |
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W986408CH
Features
• 3.3V ± 0.3V power supply
• Up to 133MHz clock frequency
• 2,097,152 words x 4 banks x 8 bits organization
• Auto Refresh and Self Refresh
• CAS latency: 2 and 3
• Burst Length: 1, 2, 4, 8 , and full page
• Burst read, Single Writes Mode
• Byte data controlled by DQM
• Power-Down Mode
• Auto-Precharge and controlled precharge
• 4k refresh cycles / 64ms
• Interface: LVTTL
• Package: TSOP II 54 pin, 400 mil - 0.80
2M x 8 bit x 4 Banks SDRAM
General Description
W986408CH is a high speed synchronous dynamic random access memory (SDRAM) , organized as 2M words x 4 banks x
8 bits. Using pipelined architecture and 0.20um process technology, W986408CH delivers a data bandwidth of up to 133M ( -
75) bytes per second. To fully comply to the personal computer industrial standard, W986408CH is sorted into two speed
grades: -75 and -8H. The -75 is compliant to the PC133 specitication, The -8H is compliant to the PC100/CL2 specification
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of
1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated
by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock
cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst
to maximize its performance. W986408CH is ideal for main memory in high performance applications.
Key Parameters
Symbol
Description
tCK Clock Cycle Time
tAC Access Time from CLK
tRP Precharge to Active Command
tRCD Active to Read/Write Command
ICC1 Operation Current ( Single bank )
ICC4 Burst Operation Current
ICC6 Self-Refresh Current
min/max
min
max
min
min
max
max
max
-75 (PC133)
7.5ns
5.4ns
20ns
20ns
65mA
115mA
1mA
-8H (PC100)
8ns
6ns
20ns
20ns
60mA
110mA
1mA
Revision 1.0
Publication Release Date: March, 1999
-1-
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W986408CH
ABSOLUTE MAXIMUM RATINGS
SYMBOL
ITEM
VIN,VOUT
Input, Output Voltage
VCC,VCCQ
Power Supply Voltage
TOPR
Operating Temperature
TSTG
Storage Temperature
TSOLDER
Soldering Temperature(10s)
PD Power Dissipation
IOUT Short Circuit Output Current
2M x 8 bit x 4 Banks SDRAM
RATING
-0.3~VCC+0.3
-0.3~4.6
0~70
-55~150
260
1
50
UNIT
V
V
°C
°C
°C
W
mA
NOTES
1
1
1
1
1
1
1
RECOMMENDED DC OPERATING CONDITIONS ( Ta = 0 to 70°C )
SYMBOL
PARAMETER
MIN TYP
MAX
UNIT
VCC Power Supply Voltage
3.0 3.3
3.6
V
VCCQ
Power Supply Voltage (for I/O Buffer)
3.0
3.3
3.6
V
VIH Input High Voltage
2.0
-
VCC+0.3
V
VIL Input Low Voltage
-0.3 -
0.8 V
Note: VIH(max) = VCC/VCCQ+1.2V for pulse width < 5ns
VIL(min) = VSS/VSSQ-1.2V for pulse width < 5ns
NOTES
2
2
2
2
CAPACITANCE (VCC=3.3V, f = 1MHz, Ta=25°C)
SYMBOL
PARAMETER
Input Capacitance (A0 to A11, BS0 ,BS1, CS, RAS, CAS, WE, DQM, CKE)
CI
Input Capacitance (CLK)
CO Input/Output capacitance
Note: These parameters are periodically sampled and not 100% tested.
MIN MAX UNIT
- 4 pf
- 4 pf
- 6.5 pf
Revision 1.0
Publication Release Date: March, 1999
-5-
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for W986408CH electronic component. |
| Information | Total 30 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ W986408CH.PDF Datasheet ] | |
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