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WMBT5401LT1 PDF даташит

Спецификация WMBT5401LT1 изготовлена ​​​​«Wing Shing Computer Components» и имеет функцию, называемую «PNP Silicon Transistor».

Детали детали

Номер произв WMBT5401LT1
Описание PNP Silicon Transistor
Производители Wing Shing Computer Components
логотип Wing Shing Computer Components логотип 

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WMBT5401LT1 Даташит, Описание, Даташиты
PNP SiliconTransistor
COLLECTOR
3
WMBT5401LT1
1
BASE
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
WMBT5401LT1 = 2L
Symbol
VCEO
VCBO
VEBO
IC
Value
–150
–160
–5.0
–500
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –120 Vdc, IE = 0)
(VCB = –120 Vdc, IE = 0, TA = 100°C)
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
I CB0
3
1
2
SOT– 23 (TO – 236AB)
Min Max Unit
–150
–160
–5.0
Vdc
Vdc
Vdc
–50 nAdc
–50 µAdc
Wing Shing Computer Components Co., (H.K .)L td.
Homepage: http: / / www.wingshing.com
Tel: (8 52) 2341 9 27 6 Fax : (8 52) 27 9 7 8 153
E-mail: wsccltd@ hk star.com
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1









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WMBT5401LT1 Даташит, Описание, Даташиты
WMBT5401LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –1.0 mAdc, VCE = –5.0 Vdc)
(IC = –10 mAdc, VCE = –5.0 Vdc)
(IC = –50 mAdc, VCE = –5.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
hFE
VCE(sat)
80
80
80
240
Vdc
–0.2
–0.5
Base – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
VBE(sat)
Vdc
–1.0
–1.0
Current – Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –10 Vdc, f = 100 MHz)
fT MHz
100 300
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
pF
— 6.0
Small Signal Current Gain
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
hfe —
40 200
Noise Figure
(IC = –200 µAdc, VCE = –5.0 Vdc, RS = 10 Ω, f = 1.0 kHz)
NF dB
— 8.0










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Номер в каталогеОписаниеПроизводители
WMBT5401LT1PNP Silicon TransistorWing Shing Computer Components
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