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WS57C191C-25 PDF даташит

Спецификация WS57C191C-25 изготовлена ​​​​«STMicroelectronics» и имеет функцию, называемую «HIGH SPEED 2K x 8 CMOS PROM/RPROM».

Детали детали

Номер произв WS57C191C-25
Описание HIGH SPEED 2K x 8 CMOS PROM/RPROM
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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WS57C191C-25 Даташит, Описание, Даташиты
WS57C191C/291C
HIGH SPEED 2K x 8 CMOS PROM/RPROM
KEY FEATURES
Ultra-Fast Access Time
— tACC = 25 ns
— tCS = 12 ns
Low Power Consumption
Fast Programming
Available in 300 Mil DIP and PLDCC
Pin Compatible with Am27S191/291
and N82S191 Bipolar PROMs
Immune to Latch-UP
— Up to 200 mA
ESD Protection Exceeds 2000V
GENERAL DESCRIPTION
The WS57C191C/291C is an extremely High Performance 16K UV Erasable Electrically Re-Programmable Read
Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar
PROM speeds while consuming only 25% of the power required by its Bipolar counterparts. The WS57C191C/291C
is also configured in the standard Bipolar PROM pinout which provides an easy upgrade path for systems which are
currently using Bipolar PROMs.
The WS57C191C is packaged in a conventional 600 mil DIP package as well as a Plastic Leaded Chip Carrier
(PLDCC) and a Ceramic Leadless Chip Carrier (CLLCC). The WS57C291C is packaged in a space saving 300 mil
DIP package configuration. Both are available in commercial, industrial, and military operating temperature ranges.
BLOCK DIAGRAM
6
A5 - A10
ROW
ADDRESSES
ROW
DECODER
EPROM ARRAY
16,384 BITS
5
A0 - A4
COLUMN
ADDRESSES
CS1/ VPP
CS2
CS3
COLUMN
DECODER
SENSE
AMPLIFIERS
8
OUTPUTS
PIN CONFIGURATION
TOP VIEW
Chip Carrier
CERDIP/Plastic DIP
NC
A5 A6 A7 VCC A8 A9
A7 1
A4
4
5
3
2
1
28 27 26
25
A10
A6 2
A5 3
A3 6
A2 7
24
23
CS1/VPP
CS2
A4
A3
4
5
A1 8
22 CS3
A0 9
21 NC
NC 10
20 O7
O0 11
19 O6
12 13 14 15 16 17 18
A2 6
A1 7
A0 8
O0 9
O1 10
O2 11
O1 O2 NC O3 O4 O5
GND
GND 12
24 VCC
23 A8
22 A9
21 A10
20 CS1/VPP
19 CS2
18 CS3
17 O7
16 O6
15 O5
14 O4
13 O3
PRODUCT SELECTION GUIDE
PARAMETER
Address Access Time (Max)
CS to Output Valid Time (Max)
191C/291C-25
25 ns
12 ns
191C/291C-35
35 ns
20 ns
191C/291C-45
45 ns
20 ns
191C/291C-55
55 ns
20 ns
Return to Main Menu
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WS57C191C-25 Даташит, Описание, Даташиты
WS57C191C/291C
ABSOLUTE MAXIMUM RATINGS*
Storage Temperature............................–65° to + 150°C
Voltage on any Pin with
Respect to Ground ....................................–0.6V to +7V
VPP with Respect to Ground...................–0.6V to + 14V
ESD Protection ..................................................>2000V
*NOTICE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at these or any other conditions above
those indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of
time may affect device reliability.
MODE SELECTION
PINS
MODE
CS1/ CS2
VPP
CS3
VCC
OUTPUTS
Read
VIL VIH VIH VCC DOUT
Output Disable VIH X X VCC High Z
Output Disable X VIL X VCC High Z
Program
VPP X X VCC
DIN
Program Verify VIL VIH VIH VCC DOUT
Output Disable X X VIL VCC High Z
OPERATING RANGE
RANGE
TEMPERATURE
Commercial
0°C to +70°C
Industrial
–40°C to +85°C
Military
–55°C to +125°C
VCC
+5V ± 10%
+5V ± 10%
+5V ± 10%
DC READ CHARACTERISTICS Over Operating Range. (See Above)
SYMBOL PARAMETER
TEST CONDITIONS
VIL Input Low Voltage (Note 3)
VIH Input High Voltage (Note 3)
VOL Output Low Voltage IOL = 16 mA
VOH Output High Voltage IOH = –4 mA
ICC1
VCC Active Current
(CMOS)
VCC = 5.5V, f = 0 MHz
(Note 1), Output Not Loaded
Add 2mA/MHz for AC Operation
Comm'l
Industrial
Military
ICC2
VCC Active Current
(TTL)
VCC = 5.5V, f = 0 MHz
(Note 2), Output Not Loaded
Add 2mA/MHz for AC Operation
Comm'l
Industrial
Military
ILI
Input Leakage
Current
VIN = 5.5V or Gnd
ILO
Output Leakage
Current
VOUT = 5.5 V or Gnd
MIN
–0.1
2.0
2.4
–10
–10
MAX UNITS
0.8 V
VCC + 0.3
0.4
V
V
V
30 mA
35 mA
35 mA
40 mA
50 mA
50 mA
10 µA
10 µA
NOTES:
1. CMOS inputs: GND ± 0.3V or VCC ± 0.3V.
2. TTL inputs: VIL 0.8V, VIH 2.0V.
3. These are absolute voltages with respect to device ground pin and include all overshoots due to system and/or tester noise.
Do not attempt to test these values without suitable equipment.
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WS57C191C-25 Даташит, Описание, Даташиты
WS57C191C/291C
AC READ CHARACTERISTICS Over Operating Range. (See Above)
PARAMETER
SYMBOL 191C/291C-25 191C/291C-35 191C/291C-45 191C/291C-55 UNITS
MIN MAX MIN MAX MIN MAX MIN MAX
Address to Output Delay
tACC
25 35
45
55
CS to Output Delay
Output Disable to
Output Float*
tCS
tDF
12 20 20 20
ns
12 20 20 20
Address to Output Hold
tOH 0
0
0
0
*Sampled, Not 100% Tested
AC READ TIMING DIAGRAM
ADDRESSES
CS
OUTPUTS
VALID
tACC
tOH
tCS
VALID
tDF
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Номер в каталогеОписаниеПроизводители
WS57C191C-25HIGH SPEED 2K x 8 CMOS PROM/RPROMSTMicroelectronics
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WS57C191C-25DHIGH SPEED 2K x 8 CMOS PROM/RPROMSTMicroelectronics
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WS57C191C-25JHIGH SPEED 2K x 8 CMOS PROM/RPROMSTMicroelectronics
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WS57C191C-25PHIGH SPEED 2K x 8 CMOS PROM/RPROMSTMicroelectronics
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