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WS57C51C PDF даташит

Спецификация WS57C51C изготовлена ​​​​«STMicroelectronics» и имеет функцию, называемую «HIGH SPEED 16K x 8 CMOS PROM/RPROM».

Детали детали

Номер произв WS57C51C
Описание HIGH SPEED 16K x 8 CMOS PROM/RPROM
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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WS57C51C Даташит, Описание, Даташиты
WS57C51C
HIGH SPEED 16K x 8 CMOS PROM/RPROM
KEY FEATURES
Very Fast Access Time
35 ns
Low Power Consumption
Fast Programming
Pin Compatible with Am27S51
and N82HS1281
Immune to Latch-Up
Up to 200 mA
ESD Protection Exceeds 2000 V
GENERAL DESCRIPTION
The WS57C51C is a High Performance 128K UV Erasable Electrically Re-Programmable Read Only Memory
(RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM
speeds while consuming only 25% of the power required by its Bipolar counterparts.
A further advantage of the WS57C51C over Bipolar PROM devices is the fact that it utilizes a proven EPROM
technology. This enables the entire memory array to be tested for switching characteristics and functionality after
assembly. Unlike devices which cannot be erased, every WS5751C in a windowed package is 100% tested with
worst case test patterns both before and after assembly.
The WS57C51C provides a low power alternative to those designs which are committed to a Bipolar PROM
footprint. It is a direct drop-in replacement for a Bipolar PROM of the same architecture (16K x 8). No software,
hardware or layout changes need be performed.
BLOCK DIAGRAM
8
A6 - A13
ROW
ADDRESSES
ROW
DECODER
EPROM ARRAY
131,072 BITS
6
A0 - A5
COLUMN
ADDRESSES
CS1/ VPP
CS2
CS3
CS4
COLUMN
DECODER
SENSE
AMPLIFIERS
8
OUTPUTS
PIN CONFIGURATION
TOP VIEW
Chip Carrier
CERDIP
A9 1
A5
4
5
3
2
1
32 31 30
29
A12
A8 2
A7 3
A4 6
28 A13
A6 4
A3 7
A2 8
27
26
CS1/VPP
CS2
A5 5
A4 6
A1 9
25 CS3
A0 10
24 CS4
NC 11
23 NC
O0 12
22 O7
O1 13
21 O6
14 15 16 17 18 19 20
A3 7
A2 8
A1 9
A0 10
O0 11
O1 12
O2 13
O2 NC O3 NC O4 O5
GND 14
28 VCC
27 A10
26 A11
25 A12
24 A13
23 CS1/VPP
22 CS2
21 CS3
20 CS4
19 O7
18 O6
17 O5
16 O4
15 O3
PRODUCT SELECTION GUIDE
PARAMETER
Address Access Time (Max)
CS to Output Valid Time (Max)
57C51C-35
35 ns
20 ns
57C51C-45
45 ns
20 ns
57C51C-55
55 ns
25 ns
57C51C-70
70 ns
30 ns
Return to Main Menu
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WS57C51C Даташит, Описание, Даташиты
WS57C51C
ABSOLUTE MAXIMUM RATINGS*
Storage Temperature............................–65° to + 150°C
Voltage on any Pin with
Respect to Ground ....................................–0.6V to +7V
VPP with Respect to Ground...................–0.6V to + 14V
ESD Protection ..................................................>2000V
*NOTICE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at these or any other conditions above
those indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of
time may affect device reliability.
MODE SELECTION
PINS CS1/
MODE
VPP CS2 CS3 CS4 VCC OUTPUTS
Read
Output
Disable
VIL VIL VIH VIL VCC
VIH X X X VCC
DOUT
High Z
Output
Disable
X VIH X X VCC High Z
Output
Disable
X X VIL X VCC High Z
Output
Disable
X X X VIH VCC High Z
Program
Program
Verify
VPP VIH X X VCC
VIL VIL VIH VIL VCC
DI N
DOUT
OPERATING RANGE
RANGE
TEMPERATURE
Commercial
0°C to +70°C
Industrial
–40°C to +85°C
Military
–55°C to +125°C
VCC
+5V ± 10%
+5V ± 10%
+5V ± 10%
DC READ CHARACTERISTICS Over Operating Range. (See Above)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN MAX UNITS
VIL Input Low Voltage (Note 3)
–0.1 0.8
V
VIH Input High Voltage (Note 3)
2.0 VCC + 0.3
V
VOL Output Low Voltage IOL = 16 mA
0.4 V
VOH Output High Voltage IOH = –4 mA
2.4 V
ICC1
VCC Active Current
(CMOS)
VCC = 5.5 V, f = 0 MHz (Note 1), Comm'l
Output Not Loaded
Industrial
Add 4 mA/MHz for AC Operation Military
30 mA
35 mA
35 mA
ICC2
VCC Active Current
(TTL)
VCC = 5.5 V, f = 0 MHz (Note 2), Comm'l
Output Not Loaded
Industrial
Add 4 mA/MHz for AC Operation Military
50 mA
60 mA
60 mA
ILI Input Leakage
Current
VIN = 5.5V or Gnd
ILO Output Leakage
Current
VOUT = 5.5 V or Gnd
–10 10 µA
–10 10 µA
NOTES:
1. CMOS inputs: GND ± 0.3V or VCC ± 0.3V.
2. TTL inputs: VIL 0.8V, VIH 2.0V.
3. These are absolute voltages with respect to device ground pin and include all overshoots due to system and/or tester noise.
Do not attempt to test these values without suitable equipment.
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WS57C51C Даташит, Описание, Даташиты
WS57C51C
AC READ CHARACTERISTICS Over Operating Range. (See Above)
PARAMETER
SYMBOL
57C51C-35
MIN MAX
57C51C-45
MIN MAX
57C51C-55
MIN MAX
Address to Output Delay
CS to Output Delay
Output Disable to
Output Float*
Address to Output Hold
*Sampled, Not 100% Tested.
tACC
tCS
tDF
tOH
35 45 55
20 20 25
20 20 25
000
57C51C-70
MIN MAX
70
30
25
0
UNITS
ns
AC READ TIMING DIAGRAM
ADDRESSES
CSX, CS3
OUTPUTS
VALID
tACC
tOH
tCS
VALID
tDF
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