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PDF WS57LV291C Data sheet ( Hoja de datos )
| Número de pieza | WS57LV291C | |
| Descripción | HIGH SPEED 3.3 VOLT 2K x 8 CMOS PROM/RPROM | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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WS57LV291C
PRELIMINARY
HIGH SPEED 3.3 VOLT 2K x 8 CMOS PROM/RPROM
• 3.3 Volt ± 0.3 Volt VCC
• Fast Access Time
— tACC = 70 ns
— tCS = 20 ns
• Low Power Consumption
— ≤ 25 mA ICC
KEY FEATURES
• Available in 300 Mil "Skinny" DIP
• Immune to Latch-up
— Up to 200 mA
• ESD Protection Exceeds 2000V
GENERAL DESCRIPTION
The WS57LV291C is a High Performance 2K x 8 UV Erasable Re-Programmable Read Only Memory (RPROM).
This RPROM is manufactured using an advanced CMOS EPROM manufacturing process resulting in a very low
power die that affords exceptional speed capabilities with a 3.3 volt VCC supply. The WS57LV291C
is configured in the standard Bipolar PROM pinouts, the preferred and most common pinout for high speed PROMs
of 16K density.
Operating at 3.3 volts, the WS57LV291C dissipates a maximum of 25 mA under worst case conditions at maximum
speed (70 ns TAA). Typical ICC at 25°C is less than 20 milliamps.
The WS57LV291C is packaged in a space saving 300 mil windowed, hermetic DIP package.
BLOCK DIAGRAM
6
A5 - A10
ROW
ADDRESSES
ROW
DECODER
EPROM ARRAY
16,384 BITS
5
A0 - A4
COLUMN
ADDRESSES
CS1/ VPP
CS2
CS3
COLUMN
DECODER
SENSE
AMPLIFIERS
8
OUTPUTS
PRODUCT SELECTION GUIDE
PARAMETER
Address Access Time (Max)
CS to Output Valid Time (Max)
Return to Main Menu
PIN CONFIGURATION
TOP VIEW
CERDIP
A7
A6
A5
A4
A3
A2
A1
A0
O0
O1
O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
24 VCC
23 A8
22 A9
21 A10
20 CS1/VPP
19 CS2
18 CS3
17 O7
16 O6
15 O5
14 O4
13 O3
WS57LV291C-70
70 ns
20 ns
WS57LV291C-90
90 ns
30 ns
2-15
1 page  
WS57LV291C
PROGRAMMING INFORMATION
DC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)
SYMBOLS
PARAMETER
MIN MAX
ILI
Input Leakage Current
(VIN = VCC or Gnd)
IPP
VPP Supply Current During
Programming Pulse
ICC VCC Supply Current
VOL
Output Low Voltage During Verify
(IOL = 16 mA)
VOH
Output High Voltage During Verify
(IOH = –4 mA)
–10 10
60
25
0.45
2.4
NOTES: 7. VPP must not be greater than 13 volts including overshoot.
UNITS
µA
mA
mA
V
V
AC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)
SYMBOLS
PARAMETER
MIN TYP MAX
tAS Address Setup Time
tDF Chip Disable Setup Time
tDS Data Setup Time
tPW Program Pulse Width
tDH Data Hold Time
tCS Chip Select Delay
tRF VPP Rise and Fall Time
2
2
100
2
1
30
200
30
UNITS
µs
ns
µs
µs
µs
ns
µs
PROGRAMMING WAVEFORM
VIH
ADDRESSES
VIL
VIH
DATA
VIL
VPP
VIH
CS1/VPP
VIL
VIH
CS2/CS3
VIL
tDF
tAS
tDS
ADDRESS STABLE
DATA IN
tPW
tDH
DATA OUT
tCS
tRF tRF
DON'T CARE
2-19
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet WS57LV291C.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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