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ZPD30 Datasheet Download - Shanghai Lunsure Electronic Tech

Номер произв ZPD30
Описание 0.5W SILICON PLANAR ZENER DIODES
Производители Shanghai Lunsure Electronic Tech
логотип Shanghai Lunsure Electronic Tech логотип 

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ZPD30 Даташит, Описание, Даташиты
CE
CHENYI ELECTRONICS
FEATURES
. The zener voltage are gaded accrding to the intermational E24
standard. Over voltage tolerance and higher zener voltage
on request
MECHANICAL DATA
. Case: DO-35 glass case
. Polarity: Color band denotes cathode end
.weight: Approx. 0.13 gram
ZPD2.7 THRU ZPD51
0.5W SILICON PLANAR ZENER DIODES
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)(TA=25 )
Symbols
Value
Zener current see table "Characteristics"
Power dissipation at TA=25
Junction temperature
Storage temperature range
Ptot
TJ
TSTG
500 1)
175
-55 to +175
1)Valid provided that a distance of 8mm from case are kept at ambient temperature
Units
mW
ELECTRCAL CHARACTERISTICS(TA=25 )
Symbols Min
Typ
Thermal resistance junction to ambient
R JA
1) Valid provided that a distance at 8mm from case are kept at ambient temperature
Max
300 1)
Units
K/W
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 3







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ZPD30 Даташит, Описание, Даташиты
CE
CHENYI ELECTRONICS
ZPD2.7 THRU ZPD51
0.5W SILICON PLANAR ZENER DIODES
ZDP2.7 THRU ZPD51 SILICON PLANAR ZENER DIODES
Type
ZPD2.7
ZPD3
ZPD3.3
ZPD3.6
ZPD3.9
ZPD4.3
ZPD4.7
ZPD5.1
ZPD5.6
ZPD6.2
ZPD6.8
ZPD7.5
ZPD8.2
ZPD9.1
ZPD10
ZPD11
ZPD12
ZPD13
ZPD15
ZPD16
ZPD18
ZPD20
ZPD22
ZPD24
ZPD27
ZPD30
ZPD33
ZPD36
ZPD39
ZPD43
ZPD47
ZPD51
Zener Voltage range 1)
Vznom
IZT for VZT 2)
v mA
V
2.7 2.5…2.9
3.0 2.8…3.2
3.3 3.1…3.5
3.6 3.4…3.8
3.9 3.7…4.1
4.3 4.0…4.6
4.7 4.4…5.0
5.1 4.8…5.4
5.6 5.2…6.0
6.2 5.8…6.6
6.8 6.4…7.2
7.5 7.0…7.9
8.2 7.7…8.7
9.1 8.5…9.6
10 9.4…10.6
11 10.4…11.6
5
12 11.4…12.7
13 12.4…14.1
15 13.8…15.6
16 15.3…17.1
18 16.8…19.1
20 18.8…21.2
22 20.8…23.3
24 22.8…25.6
27 25.1…28.9
30 28…32
33 31…35
36 34…38
39 37…41
43 40…46
47 44…50
51 48…54
Dynamic resistance
rZjt and rZjk at IZK
<83 <50
mA
<95
<500
<78
<60 <480
<40 <400
<10 <200
<8 <150
<7
<7 <50
<10
<15 <70
<20 <70
<20 <90
<25 <110
<30 <110
<40 <170
<50 <170
<50
<55 <220
1
<80
<250
<90
<90
<100
<100
<100
<300
<700
<750
<750
Temp. Coeff. Reverse
of Zener Volt Voltage
at at
IZ=5mA I=100nA Min.
VZ 10-4/K
VR(V)
-9...-4
-9...-3
-8...-3
-8...-3
-7...-3
-6…-1
-5…+2
-3…+4
0.8
-2…+6
1
-1…+7
+2…+7
2
3
+3…+7
5
+4…+7
6
+5…+8
7
+5…+8
7.5
+5…+9
8.5
+6…+9
9
+7…+9
10
+7…+9
11
+8…+9.5
12
+8…+9.5
13
+8…+10
15
+8…+10
16
+8…+10
18
+8…+10
20
+8…+10
22.5
+8…+10
25
+8…+10
27
+10…+12
29
+10…+12
32
+10…+12
35
+10…+12
38
Admissible Zener
Current of
Tamb=
Tamb=
45 25
IZmA
135
117
IZmA
160
140
109 130
101 120
92 110
85 100
76 90
67 80
59 70
54 64
49 58
44 53
40 47
36 43
33 40
30 36
28 32
25 29
23 27
20 24
18 21
17 20
16 18
13 16
12 14
10 13
9 12
9 11
8 10
7 9.2
6 8.5
6 7.8
NOTE 1)TESTED WITH PULSE Tp=20mS
2) Valid provided that electrodes are kept ambient temperature at a distance of 8mm from case
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
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ZPD30 Даташит, Описание, Даташиты
CE
CHENYI ELECTRONICS
ZPD2.7 THRU ZPD51
0.5W SILICON PLANAR ZENER DIODES
ZPD2.7 THRU ZPD51 SILICON PLANAR POWER ZENER DIODES
BREAKDOWN CHARACTERISITICS AT TJ=CONSTANT(PULSED)
BREAKDOWN CHARACTERISITICS AT TJ=CONSTANT(PULSED)
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 3 of 3










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