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ZTX1055 PDF даташит

Спецификация ZTX1055 изготовлена ​​​​«Zetex Semiconductors» и имеет функцию, называемую «NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR».

Детали детали

Номер произв ZTX1055
Описание NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Производители Zetex Semiconductors
логотип Zetex Semiconductors логотип 

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ZTX1055 Даташит, Описание, Даташиты
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 – JANUARY 1995
FEATURES
* VCEO=120V
* 3 Amp continuous Current
* 6 Amp pulse Current
* Very Low Saturation Voltage
APPLICATIONS
* Automotive Switching Circuit
* Audio Driver Stages
ZTX1055A
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Tj:Tstg
VALUE
175
120
5
6
3
500
1
-55 to +200
UNIT
V
V
V
A
A
mA
W
°C









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ZTX1055 Даташит, Описание, Даташиты
ZTX1055A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
175 280
V IC=100µA
Collector-Emitter
Breakdown Voltage
VCES
175 280
V IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO
120 150
V IC=10mA
Collector-Emitter
Breakdown Voltage
VCEV
175 280
V IC=100µA, VEB=1V
Emitter-Base Breakdown V(BR)EBO
Voltage
5 8.8
V IE=100µA
Collector Cut-Off Current ICBO
Emitter Cut-Off Current IEBO
Collector Emitter Cut-Off ICES
Current
0.3 10
0.3 10
0.3 10
nA VCB=130V
nA VEB=4V
nA VCES=130V
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
22 50 mV IC=0.1A, IB=5mA*
120 160 mV IC=1A, IB=20mA*
220 310 mV IC=3A, IB=150mA*
950 1000 mV IC=3A, IB=150mA*
Base-Emitter Turn-On
Voltage
VBE(on)
810 900 mV IC=3A, VCE=10V*
Static Forward Current
Transfer Ratio
hFE
Transition Frequency
fT
275 400
300 450 1200
50 110
15
IC=10mA, VCE=10V*
IC=1A, VCE=10V*
IC=3A, VCE=10V*
IC=6A, VCE=10V*
130 MHz IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Switching Times
Cobo
ton
toff
17
90
2400
30
pF
ns
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
VCB=10V, f=1MHz
IC=1A, IB=10mA, VCC=50V
IC=1A, IB=±10mA,
VCC=50V









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ZTX1055 Даташит, Описание, Даташиты
ZTX1055A
TYPICAL CHARACTERISTICS
0.8
+25°C
0.6
0.4
I+/I*=20
I+/I*=30
I+/I*=50
0.2
1mA 10mA 100mA
1A
IC-Collector Current
VCE(sat) v IC
10A
0.8
I+/I*=20
0.6
0.4
0.2
-55°C
+25°C
+100°C
+175°C
1mA 10mA 100mA
1A
IC-Collector Current
VCE(sat) v IC
10A
V+-=10V
600
400
200
+100°C
+25°C
-55°C
1mA 10mA 100mA
1A
IC-Collector Current
hFE v IC
10A
1.0
V+-=10V
0.8 -55°C
+25°C
0.6
+100°C
0.4
+175°C
0.2
1mA 10mA 100mA
1A
IC-Collector Current
VBE(on) v IC
10A
1.0 I+/I*=20
0.8 -55°C
0.6 +25°C
0.4 +100°C
+175°C
0.2
1mA 10mA 100mA
1A
IC-Collector Current
VBE(sat) v Ic
10A
10 Single Pulse Test Tamb=25C
1
DC
1s
100ms
0.1
10ms
1ms
100us
0.01
0.1V 1V 10V 100V
VCE - Collector Voltage
Safe Operating Area










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