ZTX1055 PDF даташит
Спецификация ZTX1055 изготовлена «Zetex Semiconductors» и имеет функцию, называемую «NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR». |
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Детали детали
Номер произв | ZTX1055 |
Описание | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
Производители | Zetex Semiconductors |
логотип |
4 Pages
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NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 JANUARY 1995
FEATURES
* VCEO=120V
* 3 Amp continuous Current
* 6 Amp pulse Current
* Very Low Saturation Voltage
APPLICATIONS
* Automotive Switching Circuit
* Audio Driver Stages
ZTX1055A
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Tj:Tstg
VALUE
175
120
5
6
3
500
1
-55 to +200
UNIT
V
V
V
A
A
mA
W
°C
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ZTX1055A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
175 280
V IC=100µA
Collector-Emitter
Breakdown Voltage
VCES
175 280
V IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO
120 150
V IC=10mA
Collector-Emitter
Breakdown Voltage
VCEV
175 280
V IC=100µA, VEB=1V
Emitter-Base Breakdown V(BR)EBO
Voltage
5 8.8
V IE=100µA
Collector Cut-Off Current ICBO
Emitter Cut-Off Current IEBO
Collector Emitter Cut-Off ICES
Current
0.3 10
0.3 10
0.3 10
nA VCB=130V
nA VEB=4V
nA VCES=130V
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
22 50 mV IC=0.1A, IB=5mA*
120 160 mV IC=1A, IB=20mA*
220 310 mV IC=3A, IB=150mA*
950 1000 mV IC=3A, IB=150mA*
Base-Emitter Turn-On
Voltage
VBE(on)
810 900 mV IC=3A, VCE=10V*
Static Forward Current
Transfer Ratio
hFE
Transition Frequency
fT
275 400
300 450 1200
50 110
15
IC=10mA, VCE=10V*
IC=1A, VCE=10V*
IC=3A, VCE=10V*
IC=6A, VCE=10V*
130 MHz IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Switching Times
Cobo
ton
toff
17
90
2400
30
pF
ns
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
VCB=10V, f=1MHz
IC=1A, IB=10mA, VCC=50V
IC=1A, IB=±10mA,
VCC=50V
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ZTX1055A
TYPICAL CHARACTERISTICS
0.8
+25°C
0.6
0.4
I+/I*=20
I+/I*=30
I+/I*=50
0.2
1mA 10mA 100mA
1A
IC-Collector Current
VCE(sat) v IC
10A
0.8
I+/I*=20
0.6
0.4
0.2
-55°C
+25°C
+100°C
+175°C
1mA 10mA 100mA
1A
IC-Collector Current
VCE(sat) v IC
10A
V+-=10V
600
400
200
+100°C
+25°C
-55°C
1mA 10mA 100mA
1A
IC-Collector Current
hFE v IC
10A
1.0
V+-=10V
0.8 -55°C
+25°C
0.6
+100°C
0.4
+175°C
0.2
1mA 10mA 100mA
1A
IC-Collector Current
VBE(on) v IC
10A
1.0 I+/I*=20
0.8 -55°C
0.6 +25°C
0.4 +100°C
+175°C
0.2
1mA 10mA 100mA
1A
IC-Collector Current
VBE(sat) v Ic
10A
10 Single Pulse Test Tamb=25C
1
DC
1s
100ms
0.1
10ms
1ms
100us
0.01
0.1V 1V 10V 100V
VCE - Collector Voltage
Safe Operating Area
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