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ZTX1056 PDF даташит

Спецификация ZTX1056 изготовлена ​​​​«Zetex Semiconductors» и имеет функцию, называемую «NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR».

Детали детали

Номер произв ZTX1056
Описание NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Производители Zetex Semiconductors
логотип Zetex Semiconductors логотип 

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ZTX1056 Даташит, Описание, Даташиты
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 – JANUARY 1995
FEATURES
* VCEO=160V
* 3 Amp Continuous Current
* 6 Amp Pulse Current
* Low Saturation Voltage
ZTX1056A
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Tj:Tstg
VALUE
200
160
5
6
3
500
1
-55 to +200
UNIT
V
V
V
A
A
mA
W
°C









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ZTX1056 Даташит, Описание, Даташиты
ZTX1056A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
200 310
V IC=100µA
Collector-Emitter
Breakdown Voltage
VCES
200 310
V IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO
160 190
V IC=10mA
Collector-Emitter
Breakdown Voltage
VCEV
200 310
V IC=100µA, VEB=1V
Emitter-Base Breakdown V(BR)EBO
Voltage
5 8.8
V IE=100µA
Collector Cut-Off Current ICBO
Emitter Cut-Off Current IEBO
Collector Emitter Cut-Off ICES
Current
0.3 10
0.3 10
0.3 10
nA VCB=150V
nA VEB=4V
nA VCES=150V
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
25 60 mV IC=0.1A, IB=5mA*
95 140 mV IC=1A, IB=50mA*
175 250 mV IC=2A, IB=100mA*
220 300 mV IC=3A, IB=200mA*
950 1050 mV IC=3A, IB=200mA*
Base-Emitter Turn-On
Voltage
VBE(on)
860 950 mV IC=3A, VCE=10V*
Static Forward Current
Transfer Ratio
hFE
Transition Frequency
fT
275 420
300 450 1200
250 400
60 120
30 50
15
IC=10mA, VCE=10V*
IC=0.5A, VCE=10V*
IC=1A, VCE=10V*
IC=2A, VCE=10V*
IC=3A, VCE=10V*
IC=6A, VCE=10V*
120 MHz IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Switching Times
Cobo
ton
toff
14
110
2450
25
pF
ns
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
VCB=10V, f=1MHz
IC=1A, IB=10mA, VCC=50V
IC=1A, IB=±10mA,
VCC=50V









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ZTX1056 Даташит, Описание, Даташиты
ZTX1056A
TYPICAL CHARACTERISTICS
0.8
+25C
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Ic/I*=15
Ic/I*=20
Ic/I*=50
1mA 10mA 100mA
1A
IC-Collector Current
VCE(sat) v IC
10A
0.8
Ic/I*=20
0.7
0.6 - 55°C
0.5
+25°C
+100°C
0.4 +175°C
0.3
0.2
0.1
1mA 10mA 100mA
1A
IC-Collector Current
VCE(sat) v IC
10A
700 V+-=10V
600 +100°C
500 +25°C
400
300 -55°C
200
100
1mA 10mA 100mA
1A
IC-Collector Current
hFE v IC
10A
1.0
V+-=10V
0.8 -55°C
+25°C
0.6
+100°C
0.4
+175°C
0.2
1mA 10mA 100mA
1A
IC-Collector Current
VBE(on) v IC
10A
1.0 Ic/I*=20
-55°C
0.8
+25°C
0.6
+100°C
0.4 +175°C
0.2
1mA 10mA 100mA
1A
IC-Collector Current
VBE(sat) v Ic
10A
10 Single Pulse Test Tamb=25C
1
DC
1s
100ms
0.1
10ms
1ms
100us
0.01
0.1V 1V 10V 100V
VCE - Collector Voltage
Safe Operating Area










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