ZTX1056 PDF даташит
Спецификация ZTX1056 изготовлена «Zetex Semiconductors» и имеет функцию, называемую «NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR». |
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Детали детали
Номер произв | ZTX1056 |
Описание | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
Производители | Zetex Semiconductors |
логотип |
4 Pages
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NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 JANUARY 1995
FEATURES
* VCEO=160V
* 3 Amp Continuous Current
* 6 Amp Pulse Current
* Low Saturation Voltage
ZTX1056A
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Tj:Tstg
VALUE
200
160
5
6
3
500
1
-55 to +200
UNIT
V
V
V
A
A
mA
W
°C
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ZTX1056A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
200 310
V IC=100µA
Collector-Emitter
Breakdown Voltage
VCES
200 310
V IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO
160 190
V IC=10mA
Collector-Emitter
Breakdown Voltage
VCEV
200 310
V IC=100µA, VEB=1V
Emitter-Base Breakdown V(BR)EBO
Voltage
5 8.8
V IE=100µA
Collector Cut-Off Current ICBO
Emitter Cut-Off Current IEBO
Collector Emitter Cut-Off ICES
Current
0.3 10
0.3 10
0.3 10
nA VCB=150V
nA VEB=4V
nA VCES=150V
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
25 60 mV IC=0.1A, IB=5mA*
95 140 mV IC=1A, IB=50mA*
175 250 mV IC=2A, IB=100mA*
220 300 mV IC=3A, IB=200mA*
950 1050 mV IC=3A, IB=200mA*
Base-Emitter Turn-On
Voltage
VBE(on)
860 950 mV IC=3A, VCE=10V*
Static Forward Current
Transfer Ratio
hFE
Transition Frequency
fT
275 420
300 450 1200
250 400
60 120
30 50
15
IC=10mA, VCE=10V*
IC=0.5A, VCE=10V*
IC=1A, VCE=10V*
IC=2A, VCE=10V*
IC=3A, VCE=10V*
IC=6A, VCE=10V*
120 MHz IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Switching Times
Cobo
ton
toff
14
110
2450
25
pF
ns
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
VCB=10V, f=1MHz
IC=1A, IB=10mA, VCC=50V
IC=1A, IB=±10mA,
VCC=50V
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ZTX1056A
TYPICAL CHARACTERISTICS
0.8
+25C
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Ic/I*=15
Ic/I*=20
Ic/I*=50
1mA 10mA 100mA
1A
IC-Collector Current
VCE(sat) v IC
10A
0.8
Ic/I*=20
0.7
0.6 - 55°C
0.5
+25°C
+100°C
0.4 +175°C
0.3
0.2
0.1
1mA 10mA 100mA
1A
IC-Collector Current
VCE(sat) v IC
10A
700 V+-=10V
600 +100°C
500 +25°C
400
300 -55°C
200
100
1mA 10mA 100mA
1A
IC-Collector Current
hFE v IC
10A
1.0
V+-=10V
0.8 -55°C
+25°C
0.6
+100°C
0.4
+175°C
0.2
1mA 10mA 100mA
1A
IC-Collector Current
VBE(on) v IC
10A
1.0 Ic/I*=20
-55°C
0.8
+25°C
0.6
+100°C
0.4 +175°C
0.2
1mA 10mA 100mA
1A
IC-Collector Current
VBE(sat) v Ic
10A
10 Single Pulse Test Tamb=25C
1
DC
1s
100ms
0.1
10ms
1ms
100us
0.01
0.1V 1V 10V 100V
VCE - Collector Voltage
Safe Operating Area
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