ZTX1149A PDF даташит
Спецификация ZTX1149A изготовлена «Zetex Semiconductors» и имеет функцию, называемую «PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR». |
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Детали детали
Номер произв | ZTX1149A |
Описание | PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
Производители | Zetex Semiconductors |
логотип |
4 Pages
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PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 - January 1997
FEATURES
* VCEO = - 25V
* 3 Amp Continuous Current
* 10 Amp Pulse Current
* Low Saturation Voltage
* High Gain
ZTX1149A
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Tj:Tstg
ZTX1149A
-30
-25
-5
-10
-3
-500
1
-55 to +200
UNIT
V
V
V
A
A
mA
W
°C
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ZTX1149A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
UNIT CONDITIONS.
MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO -30
-70
V IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CES -25
-60
V IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -25
-60
V IC=-10mA *
Collector-Emitter
Breakdown Voltage
V(BR)CEV -25
-60
V IC=-100µA, VEB=+1V
Emitter-Base Breakdown V(BR)EBO -5
Voltage
-8.5
V IE=-100µA
Collector Cut-Off Current ICBO
-0.3 -100 nA
VCB=-24V
Emitter Cut-Off Current IEBO
-0.3 -100 nA
VEB=-4V
Collector Emitter Cut-Off ICES
Current
-0.3 -100 nA
VCE=-20V
Collector-Emitter
Saturation Voltage
VCE(sat)
-45
-100
-140
-170
-200
-80
-170
-240
-260
-300
mV
mV
mV
mV
mV
IC=-0.1A, IB=-1.0mA*
IC=-0.5A, IB=-3mA*
IC=-1A, IB=-7mA*
IC=-2A, IB=-30mA*
IC=-3A, IB=-70mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-870 -1000 mV
IC=-3A, IB=-70mA*
Base-Emitter Turn-On
Voltage
VBE(on)
-800 -900 mV
IC=-3A, VCE=-2V*
Static Forward Current
Transfer Ratio
hFE
270 450
250 400 800
195 320
115 190
50
IC=-10mA, VCE=-2V*
IC=-0.5A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-5A, VCE=-2V*
IC=-10A, VCE=-2V*
Transition Frequency
fT
135 MHz IC=-50mA, VCE=-10V
f=50MHz
Output Capacitance
Switching Times
Ccb
ton
50 pF VCB=- 10V, f= 1MHz
150 ns IC=-4A, IB=-40mA,
VCC=-10V
toff 270 ns IC=-4A, IB=±40mA,
VCC=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%.
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ZTX1149A
TYPICAL CHARACTERISTICS
1.0
+25°C
0.8
0.6
0.4
IC/IB=10
IC/IB=50
IC/IB=100
IC/IB=200
0.2
0
1m
10m 100m
1
10
IC - Collector Current (A)
VCE(sat) v IC
100
1.0
IC/IB=100
0.8
0.6 -55°C
+25°C
+100°C
0.4
0.2
0
1m
10m 100m
1
10
IC - Collector Current (A)
VCE(sat) v IC
100
750
VCE=2V
500
250
+100°C
+25°C
-55°C
0
1m
10m 100m
1
10
IC - Collector Current (A)
hFE v IC
100
1.6
IC/IB=100
1.2
0.8
0.4
0
1m
-55°C
+25°C
+100°C
10m 100m
1
10
IC - Collector Current (A)
VBE(sat) v IC
100
1.2
VCE=2V
0.8
0.4
0
1m
-55°C
+25°C
+100°C
10m 100m
1
10
IC - Collector Current (A)
VBE(on) v IC
100
10
1
100m
DC
1s
100ms
10ms
1ms
100us
10m
100m
1
10
VCE - Collector Emitter Voltage (V)
Safe Operating Area
100
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