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ZTX1149A PDF даташит

Спецификация ZTX1149A изготовлена ​​​​«Zetex Semiconductors» и имеет функцию, называемую «PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR».

Детали детали

Номер произв ZTX1149A
Описание PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Производители Zetex Semiconductors
логотип Zetex Semiconductors логотип 

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ZTX1149A Даташит, Описание, Даташиты
PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 - January 1997
FEATURES
* VCEO = - 25V
* 3 Amp Continuous Current
* 10 Amp Pulse Current
* Low Saturation Voltage
* High Gain
ZTX1149A
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
IB
Ptot
Tj:Tstg
ZTX1149A
-30
-25
-5
-10
-3
-500
1
-55 to +200
UNIT
V
V
V
A
A
mA
W
°C









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ZTX1149A Даташит, Описание, Даташиты
ZTX1149A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
UNIT CONDITIONS.
MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO -30
-70
V IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CES -25
-60
V IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -25
-60
V IC=-10mA *
Collector-Emitter
Breakdown Voltage
V(BR)CEV -25
-60
V IC=-100µA, VEB=+1V
Emitter-Base Breakdown V(BR)EBO -5
Voltage
-8.5
V IE=-100µA
Collector Cut-Off Current ICBO
-0.3 -100 nA
VCB=-24V
Emitter Cut-Off Current IEBO
-0.3 -100 nA
VEB=-4V
Collector Emitter Cut-Off ICES
Current
-0.3 -100 nA
VCE=-20V
Collector-Emitter
Saturation Voltage
VCE(sat)
-45
-100
-140
-170
-200
-80
-170
-240
-260
-300
mV
mV
mV
mV
mV
IC=-0.1A, IB=-1.0mA*
IC=-0.5A, IB=-3mA*
IC=-1A, IB=-7mA*
IC=-2A, IB=-30mA*
IC=-3A, IB=-70mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-870 -1000 mV
IC=-3A, IB=-70mA*
Base-Emitter Turn-On
Voltage
VBE(on)
-800 -900 mV
IC=-3A, VCE=-2V*
Static Forward Current
Transfer Ratio
hFE
270 450
250 400 800
195 320
115 190
50
IC=-10mA, VCE=-2V*
IC=-0.5A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-5A, VCE=-2V*
IC=-10A, VCE=-2V*
Transition Frequency
fT
135 MHz IC=-50mA, VCE=-10V
f=50MHz
Output Capacitance
Switching Times
Ccb
ton
50 pF VCB=- 10V, f= 1MHz
150 ns IC=-4A, IB=-40mA,
VCC=-10V
toff 270 ns IC=-4A, IB=±40mA,
VCC=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%.









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ZTX1149A Даташит, Описание, Даташиты
ZTX1149A
TYPICAL CHARACTERISTICS
1.0
+25°C
0.8
0.6
0.4
IC/IB=10
IC/IB=50
IC/IB=100
IC/IB=200
0.2
0
1m
10m 100m
1
10
IC - Collector Current (A)
VCE(sat) v IC
100
1.0
IC/IB=100
0.8
0.6 -55°C
+25°C
+100°C
0.4
0.2
0
1m
10m 100m
1
10
IC - Collector Current (A)
VCE(sat) v IC
100
750
VCE=2V
500
250
+100°C
+25°C
-55°C
0
1m
10m 100m
1
10
IC - Collector Current (A)
hFE v IC
100
1.6
IC/IB=100
1.2
0.8
0.4
0
1m
-55°C
+25°C
+100°C
10m 100m
1
10
IC - Collector Current (A)
VBE(sat) v IC
100
1.2
VCE=2V
0.8
0.4
0
1m
-55°C
+25°C
+100°C
10m 100m
1
10
IC - Collector Current (A)
VBE(on) v IC
100
10
1
100m
DC
1s
100ms
10ms
1ms
100us
10m
100m
1
10
VCE - Collector Emitter Voltage (V)
Safe Operating Area
100










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Номер в каталогеОписаниеПроизводители
ZTX1149APNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTORZetex Semiconductors
Zetex Semiconductors

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