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PDF ZVN4310G Data sheet ( Hoja de datos )
| Número de pieza | ZVN4310G | |
| Descripción | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - FEBRUARY 1996
FEATURES
* Very low RDS(ON) = .54Ω
APPLICATIONS
* DC - DC Converters
* Solenoids/Relay Drivers for Automotive
PARTMARKING DETAIL - ZVN4310
ZVN4310G
D
S
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS 100 V
Continuous Drain Current at Tamb=25°C
ID
1.67 A
Pulsed Drain Current
IDM 12 A
Gate Source Voltage
VGS ± 20 V
Power Dissipation at Tamb=25°C
Ptot
3W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
100
V ID=1mA, VGS=0V
Gate-Source Threshold VGS(th)
Voltage
1
3 V ID=1mA, VDS= VGS
Gate-Body Leakage
Zero Gate Voltage
Drain Current
On-State Drain
Current(1)
IGSS
IDSS
ID(on)
9
20 nA VGS=± 20V, VDS=0V
10 µA VDS=100V, VGS=0V
100 µA VDS=80V, VGS=0V, T=125°C(2)
A VDS=25V, VGS=10V
Static Drain-Source
RDS(on)
On-State Resistance (1)
0.4 0.54 Ω VGS=10V, ID=3.3A
0.5 0.75 Ω VGS=5V, ID=1.5A
Forward
gfs
Transconductance (1)
0.6
S VDS=25V,ID=3.3A
Input Capacitance (2) Ciss
Common Source
Coss
Output Capacitance (2)
350 pF
140 pF VDS=25 V, VGS=0V, f=1MHz
Reverse Transfer
Capacitance (2)
Crss
20 pF
Turn-On Delay Time
(2)(3)
Rise Time (2)(3)
Turn-Off Delay Time
(2)(3)
td(on)
tr
td(off)
8 ns
25 ns VDD≈25V, VGEN=10V, ID=3A
30 ns RGS =50Ω
Fall Time (2)(3)
tf
16 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 - 413
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet ZVN4310G.PDF ] | |
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