ZVN4525E6 PDF даташит
Спецификация ZVN4525E6 изготовлена «Zetex Semiconductors» и имеет функцию, называемую «250V N-CHANNEL ENHANCEMENT MODE MOSFET». |
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Детали детали
Номер произв | ZVN4525E6 |
Описание | 250V N-CHANNEL ENHANCEMENT MODE MOSFET |
Производители | Zetex Semiconductors |
логотип |
8 Pages
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250V N-CHANNEL ENHANCEMENT MODE MOSFET
ZVN4525E6
SUMMARY
(
DESCRIPTION
This 250V enhancement mode N-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage circuits.
SOT89 and SOT223 versions are also available.
FEATURES
• High voltage
• Low on-resistance
• Fast switching speed
• Low gate drive
• Low threshold
• Complementary P-channel Type ZVP4525E6
• SOT23-6 package
APPLICATIONS
• Earth Recall and dialling switches
• Electronic hook switches
• High Voltage Power MOSFET Drivers
• Telecom call routers
• Solid state relays
ORDERING INFORMATION
DEVICE
REEL SIZE TAPE WIDTH (mm) QUANTITY
(inches)
PER REEL
ZVN4525E6TA
7
8mm embossed
3000 units
ZVN4525E6TC
13
8mm embossed
10000 units
DEVICE MARKING
• N52
SOT23-6
Top View
ISSUE 1 - MARCH 2001
1
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ZVN4525E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current (VGS=10V; TA=25°C)(a)
(VGS=10V; TA=70°C)(a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
VDSS
VGS
ID
ID
IDM
IS
ISM
PD
:Tj Tstg
LIMIT
250
±40
230
183
1.44
1.1
1.44
1.1
8.8
-55 to +150
UNIT
V
V
mA
mA
A
A
A
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
Junction to Ambient (b)
RθJA
RθJA
113 °C/W
65 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
NB High Voltage Applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to
voltage spacing between conductors.
ISSUE 1 - MARCH 2001
2
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CHARACTERISTICS
ZVN4525E6
ISSUE 1 - MARCH 2001
3
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Номер в каталоге | Описание | Производители |
ZVN4525E6 | 250V N-CHANNEL ENHANCEMENT MODE MOSFET | Zetex Semiconductors |
ZVN4525E6 | 250V N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
ZVN4525E6TA | 250V N-CHANNEL ENHANCEMENT MODE MOSFET | Zetex Semiconductors |
ZVN4525E6TC | 250V N-CHANNEL ENHANCEMENT MODE MOSFET | Zetex Semiconductors |
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