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ZVP0535A PDF даташит

Спецификация ZVP0535A изготовлена ​​​​«Zetex Semiconductors» и имеет функцию, называемую «P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET».

Детали детали

Номер произв ZVP0535A
Описание P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Производители Zetex Semiconductors
логотип Zetex Semiconductors логотип 

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ZVP0535A Даташит, Описание, Даташиты
P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 350 Volt VDS
* RDS(on)=100
ZVP0535A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VDS
ID
IDM
VGS
Ptot
Tj:Tstg
D
G
S
E-Line
TO92 Compatible
VALUE
-350
-50
-480
± 20
700
-55 to +150
UNIT
V
mA
mA
V
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS -350
V ID=-1mA, VGS=0V
Gate-Source
Threshold Voltage
VGS(th) -1.5 -4.5 V
ID=-1mA, VDS= VGS
Gate-Body Leakage
IGSS
100 nA VGS=± 20V, VDS=0V
Zero Gate Voltage
Drain Current
IDSS
-20 µA VDS=-350 V, VGS=0
-2 mA VDS=-280 V, VGS=0V,
T=125°C(2)
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
ID(on)
RDS(on)
-120
mA VDS=-25 V, VGS=-10V
100
VGS=-10V,ID=-50mA
Forward Transconductance
(1)(2)
gfs
40
mS VDS=-25V,ID=-50mA
Input Capacitance (2)
Common Source Output
Capacitance (2)
Ciss
Coss
120 pF
20 pF
VDS=-25 V, VGS=0V, f=1MHz
Reverse Transfer Capacitance Crss
(2)
5 pF
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
td(on)
tr
td(off)
tf
10 ns
15 ns VDD-25V, ID=-50mA
15 ns
20 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle 2%
3-409
(
2









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ZVP0535A Даташит, Описание, Даташиты
ZVP0535A
TYPICAL CHARACTERISTICS
-700
-600
-500
-400
-300
-200
-100
0
0
VGS=
-10V
-8V
-6V
-5V
-4V
-20 -40 -60 -80 -100
VDS - Drain Source Voltage (Volts)
Output Characteristics
-160
-140
-120
-100
-80
-60
-40
-20
0
0 -2 -4 -6 -8
VDS - Drain Source Voltage (Volts)
Saturation Characteristics
VGS=
-10V
-8V
-6V
-5V
-4V
-10
-10
-8
-6
ID=
-4 -75mA
-50mA
-2
-25mA
0
0 -2 -4 -6 -8 -10
VGS-Gate Source Voltage (Volts)
Voltage Saturation Characteristics
-140
-120
-100
-80
-60
-40
-20
0
0
VDS=-10V
-2 -4 -6 -8 -10
VGS-Gate Source Voltage (Volts)
Transfer Characteristics
100
80
60
40
Ciss
20
Coss
0 Crss
0 -20 -40 -60 -80 -100
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
60
VDS=-10V
50
40
30
20
10
0 -20 -40 -60 -80 -100 -120
ID-Drain Current (mA)
Transconductance v drain current
3-410









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ZVP0535A Даташит, Описание, Даташиты
TYPICAL CHARACTERISTICS
ZVP0535A
60
50
VDS=-10V
40
30
20
10
0
0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10
VGS-Gate Source Voltage (Volts)
Transconductance v gate-source voltage
0
-2
VDS=
ID= -250mA
-4 -100V -200V -350V
-6
-8
-10
-12
-14
-16
0 0.5 1.0 1.5 2.0 2.5 3.0
Q-Charge (nC)
Gate charge v gate-source voltage
1000
100
VGS=-4V
-5V
-6V
-8V
-10V
10
-1
-10 -100
ID-Drain Current (mA)
-1000
On-resistance v Gate-Source Voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
Drain-Source
Resistance
RDS(on)
VGS=-10V
ID=-50mA
VGS=VDS
0.8
Gate
Threshold
Voltage
ID=-1mA
VGS(TH)
0.6
0.4
-40 -20 0 20 40 60 80 100 120 140 160 180
T-Temperature (°C)
Normalised RDS(on) and VGS(th) vs Temperature
3-411










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