ZVP0545G Datasheet PDF - Zetex Semiconductors
| Part Number | ZVP0545G | |
| Description | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
| Manufacturers | Zetex Semiconductors | |
| Logo |  |
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SOT223 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 – MARCH 98
FEATURES
* 450 Volt VDS
* RDS(on)=150Ω
ZVP0545G
D
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VDS
ID
IDM
VGS
Ptot
Tj:Tstg
S
D
G
VALUE
-450
-75
-400
± 20
2
-55 to +150
UNIT
V
mA
mA
V
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS -450
V ID=-1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) -1.5 -4.5 V
ID=-1mA, VDS= VGS
Gate-Body Leakage
Zero Gate Voltage Drain
Current
IGSS
IDSS
20 nA VGS=± 20V, VDS=0V
-20 µA VDS=-450 V, VGS=0
-2 mA VDS=-360 V, VGS=0V,
T=125°C(2)
On-State Drain Current(1)
Static Drain-Source
On-State Resistance (1)
ID(on)
-100
mA VDS=-25 V, VGS=-10V
RDS(on)
150 Ω
VGS=-10V,ID=-50mA
Forward Transconductance gfs
(1)(2)
40
mS VDS=-25V,ID=-50mA
Input Capacitance (2)
Common Source Output
Capacitance (2)
Ciss
Coss
120 pF
20 pF
VDS=-25 V, VGS=0V, f=1MHz
Reverse Transfer Crss 5 pF
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
td(on)
tr
td(off)
tf
10 ns
15 ns VDD ≈-25V, ID=-50mA
15 ns
20 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for ZVP0545G electronic component. |
| Information | Total 1 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ ZVP0545G.PDF Datasheet ] | |
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