ZVP2106B PDF даташит
Спецификация ZVP2106B изготовлена «Seme LAB» и имеет функцию, называемую «P CHANNEL ENHANCEMENT MODE DMOS FET». |
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Детали детали
Номер произв | ZVP2106B |
Описание | P CHANNEL ENHANCEMENT MODE DMOS FET |
Производители | Seme LAB |
логотип |
2 Pages
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ZVP2106B
MECHANICAL DATA
Dimensions in mm (inches)
P CHANNEL ENHANCEMENT
MODE DMOS FET
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
12.70
(0.500)
min.
0.89 max.
(0.035)
7.75 (0.305)
8.51 (0.335)
dia.
5.08 (0.200)
typ.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2
13
45°
Pin 1 – Source
TO39
Pin 2 – Gate
BVDSS
ID(cont)
RDS(on)
- 60V
0.76A
0.5Ω
2.54
(0.100)
Pin 3 – Drain
FEATURES
• FAST SWITCHING SPEEDS
• NO SECONDARY BREAKDOWN
• EXCELLENT TEMPERATURE STABILITY
• HIGH INPUT IMPEDANCE
• LOW CURRENT DRIVE
• EASE OF PARALLELING
ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless otherwise stated)
VGS Gate – Source Voltage
VDS Drain – Source Voltage
ID Continuous Drain Current (VGS = 10V , Tcase = 25°C)
ID Continuous Drain Current (VGS = 10V , Tcase = 100°C)
IDM Pulsed Drain Current
PD Power Dissipation @ TA = 25°C
PD Power Dissipation @ TC = 25°C
TJ , Tstg
Operating and Storage Temperature Range
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
±20
-60V
0.28A
-0.76A
-4A
0.7W
5W
–55 to 150°C
11/99
No Preview Available ! |
ZVP2106B
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
BVDSS Drain – Source Breakdown Voltage
Static Drain – Source On–State
RDS(on) Resistance 1
VGS(th) Gate Threshold Voltage
gfs Forward Transconductance1,2
IDSS Zero Gate Voltage Drain Current
ID(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
On-state drain current1
Input Capacitance2
Output Capacitance 2
Reverse Transfer Capacitance 2
Turn–On Delay Time2,3
Rise Time2,3
Turn–Off Delay Time2,3
Fall Time2,3
Test Conditions
VGS = 0
ID = - 1mA
VGS = -10V
ID = 500mA
VDS = VGS
VDS = -18V
VGS = 0
ID = - 1mA
ID = 500mA
VDS = 0.8VDSS
T = 125°C
VDS = - 18V
VGS = 0
VDS = -18V
f = 1MHz
VGS = –10V
VDD = -18V
ID = -500mA
Min.
- 60
- 1.5
150
-1
Typ.
Max. Unit
V
5Ω
- 3.5
- 0.5
- 100
V
mS
µA
A
100
60 pF
20
7
15
ns
12
15
Notes
1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2%
2) Sample
3) Switching times measured with 50Ω source inpedance and < 5ns rise time on a pulse generator.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
11/99
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Номер в каталоге | Описание | Производители |
ZVP2106A | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | Zetex Semiconductors |
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