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ZVP4424G PDF даташит

Спецификация ZVP4424G изготовлена ​​​​«Zetex Semiconductors» и имеет функцию, называемую «P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET».

Детали детали

Номер произв ZVP4424G
Описание P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Производители Zetex Semiconductors
логотип Zetex Semiconductors логотип 

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ZVP4424G Даташит, Описание, Даташиты
SOT223 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 - OCTOBER 1995
FEATURES
* 240 Volt VDS
* RDS(on)= 8.8typical at VGS=-3.5V
* Low threshold and Fast switching
APPLICATIONS
* Electronic hook switches
* Telecoms and Battery powered equipment
COMPLEMENTARY TYPE - ZVN4424G
PARTMARKING DETAIL - ZVP4424
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VDS
ID
IDM
VGS
Ptot
Tj:Tstg
ZVP4424G
D
S
D
G
VALUE
-240
-480
-1.0
± 40
2.5
-55 to +150
UNIT
V
mA
A
V
W
°C
3 - 438









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ZVP4424G Даташит, Описание, Даташиты
ZVP4424G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP MAX. UNIT CONDITIONS.
Drain-Source Breakdown BVDSS
Voltage
-240
V ID=-1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) -0.7 -1.4 -2.0 V
ID=-1mA, VDS= VGS
Gate-Body Leakage
Zero Gate Voltage Drain
Current
IGSS
IDSS
100 nA
-10 µA
-100 µA
VGS=± 40V, VDS=0V
VDS=-240V, VGS=0V
VDS=-190V, VGS=0V, T=125°C
On-State Drain Current
Static Drain-Source
On-State Resistance
Forward
Transconductance (1) (2)
ID(on)
RDS(on)
gfs
-0.75
125
-1.0
7.1
8.8
9
11
A VDS=-10V, VGS=-10V
VGS=-10V, ID=-200mA
VGS=-3.5V, ID=-100mA
mS VDS=-10V,ID=-0.2A
Input Capacitance (2)
Common Source Output
Capacitance (2)
Ciss
Coss
100 200 pF
18 25 pF
VDS=-25V, VGS=0V, f=1MHz
Reverse Transfer
Capacitance (2)
Crss
5 15 pF
Turn-On Delay Time (2)(3) td(on)
8 15 ns
Rise Time (2)(3)
tr
Turn-Off Delay Time (2)(3) td(off)
8
26
15
40
ns
ns
VDD≈−50V, ID=-0.25A,
VGEN=-10V
Fall Time (2)(3)
tf
20 30 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle 2%
(2) Sample test.
(3) Switching times measured with 50source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
TYPICAL CHARACTERISTICS
300
250
Note:VGS=0V
200
150
Ciss
100
Coss
50
0
-0.01
Crss
-1
-10
-100
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
0
-2
-4
-6
-8
-10 VDS= -20V
-50V
-12 -100V
5 -14
/ Note:ID=- 0.25A
-16
0 1 2 3 45
Q-Gate Charge (nC)
Gate charge v gate-source voltage
3 - 439









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ZVP4424G Даташит, Описание, Даташиты
ZVP4424G
TYPICAL CHARACTERISTICS
-1.2 300µs Pulsed Test
VGS=-10V
-1.0 -5V
-0.8
-4V
-0.6
-0.4 -3V
-0.2
0
0
-2
-2.5V
-2V
-4 -6 -8 -10
VDS - Drain Source Voltage (Volts)
Saturation Characteristics
400
-1.2
-1.0
-0.8
-0.6
VDS=-10V
300µs Pulsed Test
-0.4
-0.2
0
0
-2 -4 -6 -8
VGS - Gate Source Voltage (Volts)
Transfer Characteristics
-10
400
300
300
200
300µs Pulsed Test
VDS=-10V
100
BI
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
ID- Drain Current (Amps)
Transconductance v drain current
200
300µs Pulsed Test
VDS=-10V
100
BI
0
0
-2 -4
VGS-Gate Source Voltage (Volts)
-6
Transconductance v gate-source voltage
100
VGS=-2V
10
-2.5V
-3V
-10V
300µs Pulsed Test
1
-0.01
-0.1
-1
-10
ID-Drain Current (Amps)
On-resistance vs Drain Current
2.4 VGS=-10V
2.2 ID=0.2A
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V VGS= DS
0.4 ID=-1mA
0.2
0.0
-50
-25
0
25 50
75 100 125 150
Junction Temperature (°C)
Normalised RDS(on) and VGS(th) vs Temperature
3 - 440










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