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ZXM61N02 PDF даташит

Спецификация ZXM61N02 изготовлена ​​​​«Zetex Semiconductors» и имеет функцию, называемую «20V N-CHANNEL ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв ZXM61N02
Описание 20V N-CHANNEL ENHANCEMENT MODE MOSFET
Производители Zetex Semiconductors
логотип Zetex Semiconductors логотип 

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ZXM61N02 Даташит, Описание, Даташиты
20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXM61N02F
SUMMARY
V(BR)DSS=20V; RDS(ON)=0.18; ID=1.7A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE TAPE WIDTH (mm) QUANTITY
(inches)
PER REEL
ZXM61N02FTA
7
8mm embossed
3000 units
ZXM61N02FTC
13
8mm embossed
10000 units
DEVICE MARKING
N02
SOT23
Top View
PROVISIONAL ISSUE A - MAY 1999
57









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ZXM61N02 Даташит, Описание, Даташиты
ZXM61N02F
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current (VGS=4.5V; TA=25°C)(b)
(VGS=4.5V; TA=70°C)(b)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode)
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
Tj:Tstg
LIMIT
20
± 12
1.7
1.3
7.4
0.8
7.4
625
5
806
6.4
-55 to +150
UNIT
V
V
A
A
A
A
mW
mW/°C
mW
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
Junction to Ambient (b)
RθJA
RθJA
200 °C/W
155 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
PROVISIONAL ISSUE A - MAY 1999
58









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ZXM61N02 Даташит, Описание, Даташиты
ZXM61N02F
CHARACTERISTICS
10
Refer Note (a)
1
100m
10m
0.1
DC
1s
100ms
10ms
1ms
100us
1 10
VDS - Drain-Source Voltage (V)
Safe Operating Area
100
1.0
0.8
Refer Note (b)
Refer Note (a)
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
T - Temperature (°C)
Derating Curve
180
160
Refer Note (b)
140
120
100
80 D=0.5
60
40 D=0.2
20 D=0.1
D=0.05
0
0.0001 0.001
0.01
Single Pulse
0.1
1
10
Pulse Width (s)
Transient Thermal Impedance
240
200
Refer Note (a)
160
120
80
D=0.5
D=0.2
40
D=0.1
D=0.05
0
0.0001 0.001
0.01
Single Pulse
0.1 1
10
100 1000
Pulse Width (s)
Transient Thermal Impedance
PROVISIONAL ISSUE A - MAY 1999
59










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