DataSheet26.com

ZXM61P03 PDF даташит

Спецификация ZXM61P03 изготовлена ​​​​«Zetex Semiconductors» и имеет функцию, называемую «30V P-CHANNEL ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв ZXM61P03
Описание 30V P-CHANNEL ENHANCEMENT MODE MOSFET
Производители Zetex Semiconductors
логотип Zetex Semiconductors логотип 

7 Pages
scroll

No Preview Available !

ZXM61P03 Даташит, Описание, Даташиты
30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM61P03F
SUMMARY
V(BR)DSS=-30V; RDS(ON)=0.35; ID=-1.0A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE TAPE WIDTH (mm) QUANTITY
(inches)
PER REEL
ZXM61P03FTA
7
8mm embossed
3000 units
ZXM61P03FTC
13
8mm embossed
10000 units
DEVICE MARKING
P03
SOT23
Top View
PROVISIONAL ISSUE A - JULY 1999
81









No Preview Available !

ZXM61P03 Даташит, Описание, Даташиты
ZXM61P03F
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current (VGS=-10V; TA=25°C)(b)
(VGS=-10V; TA=70°C)(b)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)(b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
THERMAL RESISTANCE
SYMBOL
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
Tj:Tstg
LIMIT
-30
± 20
-1.1
-0.9
-4.3
-0.88
-4.3
625
5
806
6.4
-55 to +150
UNIT
V
V
A
A
A
A
mW
mW/°C
mW
mW/°C
°C
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
Junction to Ambient (b)
RθJA
RθJA
200 °C/W
155 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
PROVISIONAL ISSUE A - JULY 1999
82









No Preview Available !

ZXM61P03 Даташит, Описание, Даташиты
ZXM61P03F
CHARACTERISTICS
10
Refer Note (a)
1
100m
10m
0.1
DC
1s
100ms
10ms
1ms
100us
1 10
-VDS - Drain-Source Voltage (V)
Safe Operating Area
100
1.0
0.8
Refer Note (b)
Refer Note (a)
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
T - Temperature (°C)
Derating Curve
180
160
Refer Note (b)
140
120
100
80 D=0.5
60
40 D=0.2
20 D=0.1
D=0.05
0
0.0001 0.001
Single Pulse
0.01
0.1
Pulse Width (s)
1
10
Transient Thermal Impedance
240
200
Refer Note (a)
160
120
D=0.5
80
D=0.2
40
D=0.1
D=0.05
0
0.0001 0.001
Single Pulse
0.01 0.1 1
10
Pulse Width (s)
100 1000
Transient Thermal Impedance
PROVISIONAL ISSUE A - JULY 1999
83










Скачать PDF:

[ ZXM61P03.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
ZXM61P0220V P-CHANNEL ENHANCEMENT MODE MOSFETZetex Semiconductors
Zetex Semiconductors
ZXM61P02F20V P-CHANNEL ENHANCEMENT MODE MOSFETZetex Semiconductors
Zetex Semiconductors
ZXM61P0330V P-CHANNEL ENHANCEMENT MODE MOSFETZetex Semiconductors
Zetex Semiconductors
ZXM61P03F30V P-CHANNEL ENHANCEMENT MODE MOSFETZetex Semiconductors
Zetex Semiconductors

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск