ZXM62P03E6 PDF даташит
Спецификация ZXM62P03E6 изготовлена «Zetex Semiconductors» и имеет функцию, называемую «30V P-CHANNEL ENHANCEMENT MODE MOSFET». |
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Детали детали
Номер произв | ZXM62P03E6 |
Описание | 30V P-CHANNEL ENHANCEMENT MODE MOSFET |
Производители | Zetex Semiconductors |
логотип |
7 Pages
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30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM62P03E6
SUMMARY
V(BR)DSS=-30V; RDS(ON)=0.15⍀; ID=-2.6A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23-6 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE TAPE WIDTH (mm) QUANTITY
(inches)
PER REEL
ZXM62P03E6TA
7
8mm embossed
3000 units
ZXM62P03E6TC
13
8mm embossed
10000 units
DEVICE MARKING
• 2P03
SOT23-6
Top View
PROVISIONAL ISSUE A - JULY 1999
113
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ZXM62P03E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current (VGS=-10V; TA=25°C)(b)
(VGS=-10V; TA=70°C)(b)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)(b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
THERMAL RESISTANCE
SYMBOL
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
Tj:Tstg
LIMIT
-30
± 20
-2.6
-2.0
-13
-1.9
-13
1.1
8.8
1.7
13.6
-55 to +150
UNIT
V
V
A
A
A
A
W
mW/°C
W
mW/°C
°C
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
Junction to Ambient (b)
RθJA
RθJA
113 °C/W
73 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
PROVISIONAL ISSUE A - JULY 1999
114
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CHARACTERISTICS
ZXM62P03E6
100
10
Refer Note (a)
1
0.1
0.1
DC
1s
100ms
10ms
1ms
100us
1 10
-VDS - Drain-Source Voltage (V)
Safe Operating Area
100
2
1.5
Refer Note (b)
Refer Note (a)
1
0.5
0
0 20 40 60 80 100 120 140 160
T - Temperature (°)
Derating Curve
80
Refer Note (b)
60
40 D=0.5
20
D=0.2
D=0.1
D=0.05
0 Single Pulse
0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Transient Thermal Impedance
120
100
Refer Note (a)
80
60 D=0.5
40
D=0.2
20
D=0.1
D=0.05
0
0.0001 0.001
Single Pulse
0.01 0.1 1
10 100 1000
Pulse Width (s)
Transient Thermal Impedance
PROVISIONAL ISSUE A - JULY 1999
115
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Номер в каталоге | Описание | Производители |
ZXM62P03E6 | 30V P-CHANNEL ENHANCEMENT MODE MOSFET | Zetex Semiconductors |
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