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ZXM66P02N8 PDF даташит

Спецификация ZXM66P02N8 изготовлена ​​​​«Zetex Semiconductors» и имеет функцию, называемую «20V P-CHANNEL ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв ZXM66P02N8
Описание 20V P-CHANNEL ENHANCEMENT MODE MOSFET
Производители Zetex Semiconductors
логотип Zetex Semiconductors логотип 

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ZXM66P02N8 Даташит, Описание, Даташиты
20V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM66P02N8
SUMMARY
(BR)DSS=-20V; RDS(ON)=0.025
D=-8.0A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
ZXM66P02N8TA
ZXM66P02N8TC
7”
7”
TAPE WIDTH
12mm
12mm
QUANTITY
PER REEL
500 units
2500 units
DEVICE MARKING
ZXM6
6P02
SO8
S
S
S
Top View
D
D
D
PROVISIONAL ISSUE A - MAY 2001
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ZXM66P02N8 Даташит, Описание, Даташиты
ZXM66P02N8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current VGS=-4.5V; TA=25°C (b)
VGS=-4.5V; TA=70°C (b)
VGS=-4.5V; TA=25°C (a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)(b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
Tj:Tstg
LIMIT
-20
±12
-8.0
-6.5
-6.4
-28
-4.15
-28
1.56
12.5
2.5
20
-55 to +150
UNIT
V
V
A
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
Junction to Ambient (b)
RθJA
RθJA
80 °C/W
50 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum
junction temperature.
PROVISIONAL ISSUE A - MAY 2001
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ZXM66P02N8 Даташит, Описание, Даташиты
ZXM66P02N8
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNI CONDITIONS.
T
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
-20
-0.7
Forward Transconductance (1)(3)
DYNAMIC (3)
gfs
-1
-100
0.025
0.045
13.3
V ID=-250µA, VGS=0V
µA VDS=-16V, VGS=0V
nA VGS=±12V, VDS=0V
V
I =-250µA,
D
VDS=
VGS
VGS=-4.5V, ID=-3.2A
VGS=-2.5V, ID=-2.7A
S VDS=-10V,ID=-3.2A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Ciss
Coss
Crss
2068
1038
506
pF
VDS=-15 V, VGS=0V,
pF f=1MHz
pF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
14.0
44.3
118.4
98.4
43.3 -
3.5 -
21.3 -
ns
ns VDD =-10V, ID=-3.2A
ns RG=6.0, VGS=-5V
ns
nC
VDS=-10V,VGS=-4.5V
nC ID=-3.2A
nC
Diode Forward Voltage (1)
VSD
0.95
Reverse Recovery Time (3)
trr
23.1
Reverse Recovery Charge(3)
Qrr
12.2
(1) Measured under pulsed conditions. Width=300µs. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
V Tj=25°C, IS=-3.2A,
VGS=0V
ns Tj=25°C, IF=-3.2A,
di/dt= 100A/µs
nC
PROVISIONAL ISSUE A - MAY 2001
3










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