ZXM66P02N8 PDF даташит
Спецификация ZXM66P02N8 изготовлена «Zetex Semiconductors» и имеет функцию, называемую «20V P-CHANNEL ENHANCEMENT MODE MOSFET». |
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Детали детали
Номер произв | ZXM66P02N8 |
Описание | 20V P-CHANNEL ENHANCEMENT MODE MOSFET |
Производители | Zetex Semiconductors |
логотип |
4 Pages
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20V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM66P02N8
SUMMARY
(BR)DSS=-20V; RDS(ON)=0.025
D=-8.0A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
ZXM66P02N8TA
ZXM66P02N8TC
7”
7”
TAPE WIDTH
12mm
12mm
QUANTITY
PER REEL
500 units
2500 units
DEVICE MARKING
• ZXM6
6P02
SO8
S
S
S
Top View
D
D
D
PROVISIONAL ISSUE A - MAY 2001
1
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ZXM66P02N8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current VGS=-4.5V; TA=25°C (b)
VGS=-4.5V; TA=70°C (b)
VGS=-4.5V; TA=25°C (a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)(b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
Tj:Tstg
LIMIT
-20
±12
-8.0
-6.5
-6.4
-28
-4.15
-28
1.56
12.5
2.5
20
-55 to +150
UNIT
V
V
A
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
Junction to Ambient (b)
RθJA
RθJA
80 °C/W
50 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum
junction temperature.
PROVISIONAL ISSUE A - MAY 2001
2
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ZXM66P02N8
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNI CONDITIONS.
T
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
-20
-0.7
Forward Transconductance (1)(3)
DYNAMIC (3)
gfs
-1
-100
0.025
0.045
13.3
V ID=-250µA, VGS=0V
µA VDS=-16V, VGS=0V
nA VGS=±12V, VDS=0V
V
I =-250µA,
D
VDS=
VGS
Ω VGS=-4.5V, ID=-3.2A
Ω VGS=-2.5V, ID=-2.7A
S VDS=-10V,ID=-3.2A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Ciss
Coss
Crss
2068
1038
506
pF
VDS=-15 V, VGS=0V,
pF f=1MHz
pF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
14.0
44.3
118.4
98.4
43.3 -
3.5 -
21.3 -
ns
ns VDD =-10V, ID=-3.2A
ns RG=6.0Ω, VGS=-5V
ns
nC
VDS=-10V,VGS=-4.5V
nC ID=-3.2A
nC
Diode Forward Voltage (1)
VSD
0.95
Reverse Recovery Time (3)
trr
23.1
Reverse Recovery Charge(3)
Qrr
12.2
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
V Tj=25°C, IS=-3.2A,
VGS=0V
ns Tj=25°C, IF=-3.2A,
di/dt= 100A/µs
nC
PROVISIONAL ISSUE A - MAY 2001
3
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Номер в каталоге | Описание | Производители |
ZXM66P02N8 | 20V P-CHANNEL ENHANCEMENT MODE MOSFET | Zetex Semiconductors |
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