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PDF ZXMC3A16DN8 Data sheet ( Hoja de datos )

Número de pieza ZXMC3A16DN8
Descripción COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
Fabricantes Zetex Semiconductors 
Logotipo Zetex Semiconductors Logotipo



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ZXMC3A16DN8
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel V(BR)DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A
P-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
Motor Drive
LCD backlighting
ORDERING INFORMATION
DEVICE
REEL TAPE
WIDTH
ZXMC3A16DN8TA 7’‘ 12mm
ZXMC3A16DN8TC 13’‘ 12mm
QUANTITY
PER REEL
500 units
2500 units
DEVICE MARKING
ZXMC
3A16
Q1 = N-CHANNEL
SO8
Q2 = P-CHANNEL
PINOUT
Top view
PROVISIONAL ISSUE F - JULY 2004
1

1 page




ZXMC3A16DN8 pdf
ZXMC3A16DN8
P-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (1)(3)
DYNAMIC (3)
V(BR)DSS
-30
V ID=-250µA, VGS=0V
IDSS
-1.0 A VDS=-30V, VGS=0V
IGSS
100 nA VGS=Ϯ20V, VDS=0V
VGS(th)
RDS(on)
1.0
0.048
0.070
V ID=-250A, VDS= VGS
VGS=-10V, ID=-4.2A
VGS=-4.5V, ID=-3.4A
gfs 9.2 S VDS=-15V,ID=-4.2A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Ciss
Coss
Crss
970 pF
166
pF
VDS=-15 V, VGS=0V,
f=1MHz
116 pF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
VSD
trr
Qrr
3.8
6.1
35
19
12.9
24.9
2.67
3.86
ns
ns VDD =-15V, ID=-1A
ns RG=6.0, VGS=-10V
ns
nC VDS=-15V,VGS=-5V,
ID=-4.2A
nC
nC
VDS=-15V,VGS=-10V,
ID=-4.2A
nC
-0.85 -0.95
21.2
18.7
V TJ=25°C, IS=-3.6A,
VGS=0V
ns TJ=25°C, IF=-2A,
di/dt= 100A/µs
nC
NOTES
(1) Measured under pulsed conditions. Width 300µs. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE F - JULY 2004
5

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