|
|
Número de pieza | ZXMC3A16DN8 | |
Descripción | COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET | |
Fabricantes | Zetex Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ZXMC3A16DN8 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! ZXMC3A16DN8
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel V(BR)DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A
P-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• Motor Drive
• LCD backlighting
ORDERING INFORMATION
DEVICE
REEL TAPE
WIDTH
ZXMC3A16DN8TA 7’‘ 12mm
ZXMC3A16DN8TC 13’‘ 12mm
QUANTITY
PER REEL
500 units
2500 units
DEVICE MARKING
ZXMC
3A16
Q1 = N-CHANNEL
SO8
Q2 = P-CHANNEL
PINOUT
Top view
PROVISIONAL ISSUE F - JULY 2004
1
1 page ZXMC3A16DN8
P-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (1)(3)
DYNAMIC (3)
V(BR)DSS
-30
V ID=-250µA, VGS=0V
IDSS
-1.0 A VDS=-30V, VGS=0V
IGSS
100 nA VGS=Ϯ20V, VDS=0V
VGS(th)
RDS(on)
1.0
0.048
0.070
V ID=-250A, VDS= VGS
⍀ VGS=-10V, ID=-4.2A
⍀ VGS=-4.5V, ID=-3.4A
gfs 9.2 S VDS=-15V,ID=-4.2A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Ciss
Coss
Crss
970 pF
166
pF
VDS=-15 V, VGS=0V,
f=1MHz
116 pF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
VSD
trr
Qrr
3.8
6.1
35
19
12.9
24.9
2.67
3.86
ns
ns VDD =-15V, ID=-1A
ns RG=6.0Ω, VGS=-10V
ns
nC VDS=-15V,VGS=-5V,
ID=-4.2A
nC
nC
VDS=-15V,VGS=-10V,
ID=-4.2A
nC
-0.85 -0.95
21.2
18.7
V TJ=25°C, IS=-3.6A,
VGS=0V
ns TJ=25°C, IF=-2A,
di/dt= 100A/µs
nC
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE F - JULY 2004
5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet ZXMC3A16DN8.PDF ] |
Número de pieza | Descripción | Fabricantes |
ZXMC3A16DN8 | COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET | Zetex Semiconductors |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |