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PDF ZXMC3AM832 Data sheet ( Hoja de datos )
| Número de pieza | ZXMC3AM832 | |
| Descripción | MPPS Miniature Package Power Solutions COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET | |
| Fabricantes | Zetex Semiconductors | |
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ZXMC3AM832
MPPS™ Miniature Package Power Solutions
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel V(BR)DSS = 30V; RDS(ON) = 0.12 ; ID= 3.7A
P-Channel V(BR)DSS = -30V; RDS(ON) = 0.21 ; ID= -2.7A
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package)
outline this dual 30V N channel Trench MOSFET utilizes a unique structure
combining the benefits of Low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage power management
applications. Users will also gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Reduced component count
3mm x 2mm Dual Die MLP
FEATURES
• Low on - resistance
• Fast switching speed
• Low threshold
• Low gate drive
• 3mm x 2mm MLP
APPLICATIONS
• MOSFET gate drive
• LCD backlight inverters
• Motor control
PINOUT
56 78
ORDERING INFORMATION
DEVICE
REEL TAPE
WIDTH
ZXMC3AM832TA
7’‘ 8mm
ZXMC3AM832TC 13’‘ 8mm
QUANTITY
PER REEL
3000 units
10000 units
DEVICE MARKING
C01
D2 D2 D1 D1
G2 S2
G1 S1
43 2 1
3 x 2 Dual MLP
underside view
PROVISIONAL ISSUE E - JULY 2004
1
1 page  
ZXMC3AM832
P-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage
IGSS
Gate-Source Threshold Voltage
VGS(th)
Static Drain-Source On-State Resistance (1) RDS(on)
Forward Transconductance (1)(3)
DYNAMIC (3)
gfs
-30 V ID=-250µA, VGS=0V
1 A VDS=-30V, VGS=0V
100 nA VGS=Ϯ20V, VDS=0V
-0.8 V ID=-250A, VDS= VGS
0.210
0.330
Ω VGS=-10V, ID=-1.4A
Ω VGS=-4.5V, ID=-1.1A
2.48
S VDS=-15V,ID=-1.4A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Ciss
Coss
Crss
204
39.8
25.8
pF
pF
VDS=-15 V, VGS=0V,
f=1MHz
pF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
VSD
trr
Qrr
1.5
2.8
11.3
7.5
2.58
5.15
0.65
0.92
ns
ns VDD =-15V, ID=-1A
ns RG=6.0Ω, VGS=-10V
ns
nC VDS=-15V,VGS=-5V,
ID=-1.4A
nC
nC
VDS=-15V,VGS=-10V,
ID=-1.4A
nC
-0.85 -0.95
18.6
14.8
V TJ=25°C, IS=-1.1A,
VGS=0V
ns TJ=25°C, IF=-0.95A,
di/dt= 100A/µs
nC
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE E - JULY 2004
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet ZXMC3AM832.PDF ] | |
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