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PDF ZXMD63P03X Data sheet ( Hoja de datos )
| Número de pieza | ZXMD63P03X | |
| Descripción | DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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ZXMD63P03X
DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS=-30V; RDS(ON)=0.185⍀; ID=-2.0A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE TAPE WIDTH (mm) QUANTITY
(inches)
PER REEL
ZXMD63P03XTA
7 12mm embossed 1000 units
ZXMD63P03XTC
13 12mm embossed 4000 units
DEVICE MARKING
• ZXM63P03
MSOP8
Top View
PROVISIONAL ISSUE A - JULY 1999
49
1 page  
ZXMD63P03X
TYPICAL CHARACTERISTICS
100
+25° C
100
+150°C
10
10V 8V 7V 6V
-VGS
5V
4.5V
4V
3.5V
1 3V
0.1
0.1
2.5V
1 10
-VDS - Drain-Source Voltage (V)
Output Characteristics
100
10
10V 8V 7V 6V
-VGS
5V
4.5V
4V
3.5V
1 3V
2.5V
0.1
0.1
1 10
-VDS - Drain-Source Voltage (V)
Output Characteristics
100
10
VDS=-10V
T=150°C
1
T=25°C
0.1
2 2.5 3 3.5 4 4.5 5 5.5 6
-VGS - Gate-Source Voltage (V)
Typical Transfer Characteristics
10
1 VGS=-3V
VGS=-4.5V
VGS=-10V
0.1
0.1
1
-ID - Drain Current (A)
10
On-Resistance v Drain Current
2
RDS(on)
1.5
VGS=-10V
ID=-1.2A
1 VGS=VDS
ID=-250uA
VGS(th)
0.5
0
-100 -50 0 50 100 150 200
Tj - Junction Temperature (°C)
Normalised RDS(on) and VGS(th)
v Temperature
10
1
0.1
T=150°C
T=25°C
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4
-VSD - Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
PROVISIONAL ISSUE A - JULY 1999
53
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ZXMD63P03X.PDF ] | |
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