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ZXMHC3A01T8 PDF даташит

Спецификация ZXMHC3A01T8 изготовлена ​​​​«Zetex Semiconductors» и имеет функцию, называемую «COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE».

Детали детали

Номер произв ZXMHC3A01T8
Описание COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE
Производители Zetex Semiconductors
логотип Zetex Semiconductors логотип 

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ZXMHC3A01T8 Даташит, Описание, Даташиты
ZXMHC3A01T8
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE
SUMMARY
N-Channel = V(BR)DSS= 30V : RDS(on)= 0.12 ; ID= 3.1A
P-Channel = V(BR)DSS= -30V : RDS(on)= 0.21 ; ID= -2.3A
DESCRIPTION
This new generation of trench MOSFETs from Zetex
utilizes a unique structure that combines the benefits of
low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage,
power management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Single SM-8 surface mount package
APPLICATIONS
Single phase DC fan motor drive
ORDERING INFORMATION
DEVICE
REEL
SIZE
ZXMHC3A01T8TA 7”
ZXMHC3A01T8TC 13”
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
1,000 units
4,000 units
DEVICE MARKING
ZXMH
C3A01
SM8
S1
G1
D1, D2
G2
S2
S4
G4
D3, D4
G3
S3
PINOUT
Top View
DRAFT ISSUE E - APRIL 2004
1
SEMICONDUCTORS









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ZXMHC3A01T8 Даташит, Описание, Даташиты
ZXMHC3A01T8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Drain-source voltage
VDSS
Gate-source voltage
VGS
Continuous drain current (VGS= 10V; TA=25°C)(b)(d) ID
(VGS= 10V; TA=70°C) (b)(d)
(VGS= 10V; TA=25°C) (a)(d)
Pulsed drain current (c)
IDM
Continuous source current (body diode) (b)
IS
Pulsed source current (body diode) (c)
ISM
Power dissipation at TA =25°C (a) (d)
PD
Linear derating factor
Power dissipation at TA =25°C (b) (d)
PD
Linear derating factor
Operating and storage temperature range
Tj, Tstg
N-Channel P-channel
30 -30
±20 ±20
3.1 -2.3
2.5 -1.8
2.7 -2.0
14.5
-10.8
2.3 -2.2
14.5
-10.8
1.3
10.4
1.7
13.6
-55 to +150
UNIT
V
V
A
A
A
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to ambient (a) (d)
Junction to ambient (b) (d)
SYMBOL
RJA
RJA
VALUE
96
73
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t Յ10 sec.
(c) Repetitive rating on 50mm x 50mm x 1.6mm FR4, D= 0.02, pulse width 300S - pulse width limited by maximum junction temperature. Refer
to transient thermal impedance graph.
(d) For device with one active die.
SEMICONDUCTORS
DRAFT ISSUE E - APRIL 2004
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ZXMHC3A01T8 Даташит, Описание, Даташиты
CHARACTERISTICS
ZXMHC3A01T8
DRAFT ISSUE E - APRIL 2004
3
SEMICONDUCTORS










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Номер в каталогеОписаниеПроизводители
ZXMHC3A01T8COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGEDiodes
Diodes
ZXMHC3A01T8COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGEZetex Semiconductors
Zetex Semiconductors

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