ZXMHC3A01T8 PDF даташит
Спецификация ZXMHC3A01T8 изготовлена «Zetex Semiconductors» и имеет функцию, называемую «COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE». |
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Детали детали
Номер произв | ZXMHC3A01T8 |
Описание | COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE |
Производители | Zetex Semiconductors |
логотип |
10 Pages
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ZXMHC3A01T8
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE
SUMMARY
N-Channel = V(BR)DSS= 30V : RDS(on)= 0.12 ; ID= 3.1A
P-Channel = V(BR)DSS= -30V : RDS(on)= 0.21 ; ID= -2.3A
DESCRIPTION
This new generation of trench MOSFETs from Zetex
utilizes a unique structure that combines the benefits of
low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage,
power management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Single SM-8 surface mount package
APPLICATIONS
• Single phase DC fan motor drive
ORDERING INFORMATION
DEVICE
REEL
SIZE
ZXMHC3A01T8TA 7”
ZXMHC3A01T8TC 13”
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
1,000 units
4,000 units
DEVICE MARKING
• ZXMH
C3A01
SM8
S1
G1
D1, D2
G2
S2
S4
G4
D3, D4
G3
S3
PINOUT
Top View
DRAFT ISSUE E - APRIL 2004
1
SEMICONDUCTORS
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ZXMHC3A01T8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Drain-source voltage
VDSS
Gate-source voltage
VGS
Continuous drain current (VGS= 10V; TA=25°C)(b)(d) ID
(VGS= 10V; TA=70°C) (b)(d)
(VGS= 10V; TA=25°C) (a)(d)
Pulsed drain current (c)
IDM
Continuous source current (body diode) (b)
IS
Pulsed source current (body diode) (c)
ISM
Power dissipation at TA =25°C (a) (d)
PD
Linear derating factor
Power dissipation at TA =25°C (b) (d)
PD
Linear derating factor
Operating and storage temperature range
Tj, Tstg
N-Channel P-channel
30 -30
±20 ±20
3.1 -2.3
2.5 -1.8
2.7 -2.0
14.5
-10.8
2.3 -2.2
14.5
-10.8
1.3
10.4
1.7
13.6
-55 to +150
UNIT
V
V
A
A
A
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to ambient (a) (d)
Junction to ambient (b) (d)
SYMBOL
RJA
RJA
VALUE
96
73
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t Յ10 sec.
(c) Repetitive rating on 50mm x 50mm x 1.6mm FR4, D= 0.02, pulse width 300S - pulse width limited by maximum junction temperature. Refer
to transient thermal impedance graph.
(d) For device with one active die.
SEMICONDUCTORS
DRAFT ISSUE E - APRIL 2004
2
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CHARACTERISTICS
ZXMHC3A01T8
DRAFT ISSUE E - APRIL 2004
3
SEMICONDUCTORS
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Номер в каталоге | Описание | Производители |
ZXMHC3A01T8 | COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE | Diodes |
ZXMHC3A01T8 | COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE | Zetex Semiconductors |
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