ZXMN10A07Z PDF даташит
Спецификация ZXMN10A07Z изготовлена «Zetex Semiconductors» и имеет функцию, называемую «100V N-CHANNEL ENHANCEMENT MODE MOSFET». |
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Детали детали
Номер произв | ZXMN10A07Z |
Описание | 100V N-CHANNEL ENHANCEMENT MODE MOSFET |
Производители | Zetex Semiconductors |
логотип |
7 Pages
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ZXMN10A07Z
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS= 100V; RDS(ON)= 1 ID= 1.15A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT89 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Relay and solenoid driving
• Motor control
ORDERING INFORMATION
DEVICE
ZXMN10A07ZTA
REEL
SIZE
7”
TAPE
WIDTH
12mm
QUANTITY
PER REEL
1000 units
DEVICE MARKING
• 7N10
SOT89
Top View
ISSUE 1 - MARCH 2002
1
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ZXMN10A07Z
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current VGS=10V; TA=25°C (b)
VGS=10V; TA=70°C (b)
VGS=10V; TA=25°C (a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
Tj:Tstg
LIMIT
100
20
1.15
0.92
0.87
3.9
2.1
3.9
1.5
12
2.6
21
-55 to +150
UNIT
V
V
A
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
RθJA
RθJA
VALUE
83.3
47.4
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to
transient Thermal Impedance graph
ISSUE 1 - MARCH 2002
2
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CHARACTERISTICS
ZXMN10A07Z
ISSUE 1 - MARCH 2002
3
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Номер в каталоге | Описание | Производители |
ZXMN10A07F | 100V N-CHANNEL ENHANCEMENT MODE MOSFET | Zetex Semiconductors |
ZXMN10A07Z | 100V N-CHANNEL ENHANCEMENT MODE MOSFET | Zetex Semiconductors |
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