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ZXMN10A07Z PDF даташит

Спецификация ZXMN10A07Z изготовлена ​​​​«Zetex Semiconductors» и имеет функцию, называемую «100V N-CHANNEL ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв ZXMN10A07Z
Описание 100V N-CHANNEL ENHANCEMENT MODE MOSFET
Производители Zetex Semiconductors
логотип Zetex Semiconductors логотип 

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ZXMN10A07Z Даташит, Описание, Даташиты
ZXMN10A07Z
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS= 100V; RDS(ON)= 1 ID= 1.15A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT89 package
APPLICATIONS
DC - DC Converters
Power Management Functions
Relay and solenoid driving
Motor control
ORDERING INFORMATION
DEVICE
ZXMN10A07ZTA
REEL
SIZE
7”
TAPE
WIDTH
12mm
QUANTITY
PER REEL
1000 units
DEVICE MARKING
7N10
SOT89
Top View
ISSUE 1 - MARCH 2002
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ZXMN10A07Z Даташит, Описание, Даташиты
ZXMN10A07Z
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current VGS=10V; TA=25°C (b)
VGS=10V; TA=70°C (b)
VGS=10V; TA=25°C (a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
Tj:Tstg
LIMIT
100
20
1.15
0.92
0.87
3.9
2.1
3.9
1.5
12
2.6
21
-55 to +150
UNIT
V
V
A
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
RθJA
RθJA
VALUE
83.3
47.4
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to
transient Thermal Impedance graph
ISSUE 1 - MARCH 2002
2









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ZXMN10A07Z Даташит, Описание, Даташиты
CHARACTERISTICS
ZXMN10A07Z
ISSUE 1 - MARCH 2002
3










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Номер в каталогеОписаниеПроизводители
ZXMN10A07F100V N-CHANNEL ENHANCEMENT MODE MOSFETZetex Semiconductors
Zetex Semiconductors
ZXMN10A07Z100V N-CHANNEL ENHANCEMENT MODE MOSFETZetex Semiconductors
Zetex Semiconductors

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