ZXMN2A01 PDF даташит
Спецификация ZXMN2A01 изготовлена «Zetex Semiconductors» и имеет функцию, называемую «20V N-CHANNEL ENHANCEMENT MODE MOSFET». |
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Детали детали
Номер произв | ZXMN2A01 |
Описание | 20V N-CHANNEL ENHANCEMENT MODE MOSFET |
Производители | Zetex Semiconductors |
логотип |
4 Pages
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20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN2A01F
SUMMARY
V(BR)DSS=20V; RDS(ON)=0.12⍀ D=2.09A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE TAPE WIDTH
ZXMN2A01FTA
ZXMN2A01FTC
7”
13”
8mm
8mm
QUANTITY
PER REEL
3000 units
10000 units
DEVICE MARKING
• 7N2
SOT23
Top View
PROVISIONAL ISSUE B - JUNE 2001
1
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ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current VGS=4.5V; TA=25°C(b)
VGS=4.5V; TA=70°C(b)
VGS=4.5V; TA=25°C(a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
Tj:Tstg
ZXMN2A01F
LIMIT
20
12
2.09
1.67
1.84
10
1.05
10
625
5
806
6.4
-55 to +150
UNIT
V
V
A
A
A
A
mW
mW/°C
mW
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
Junction to Ambient (b)
RθJA
RθJA
200 °C/W
155 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature.
PROVISIONAL ISSUE B - JUNE 2001
2
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ZXMN2A01F
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
20
0.7
Forward Transconductance (3)
DYNAMIC (3)
gfs
0.09
6.2
1
100
0.12
0.30
V ID=250µA, VGS=0V
µA VDS=20V, VGS=0V
nA VGS=±12V, VDS=0V
V
I =250µA,
D
VDS=
VGS
Ω VGS=4.5V, ID=4A
Ω VGS=2.5V, ID=1.5A
S VDS=10V,ID=4A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Ciss
Coss
Crss
299 pF
VDS=15 V, VGS=0V,
60 pF f=1MHz
33 pF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
2.31
2.60
1.55
1.31
3.1
0.7
1.0
ns
ns VDD =10V, ID=4A
ns RG=6.0Ω, VGS=5V
ns
nC
VDS=10V,VGS=4.5V,
nC ID=4A
nC
Diode Forward Voltage (1)
VSD 0.84 0.95
Reverse Recovery Time (3) trr 11.2
Reverse Recovery Charge (3)
Qrr
3.64
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
V TJ=25°C, IS=0.6A,
VGS=0V
ns TJ=25°C, IF=4A,
di/dt= 100A/µs
nC
PROVISIONAL ISSUE B - JUNE 2001
3
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