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ZXMN2A01 PDF даташит

Спецификация ZXMN2A01 изготовлена ​​​​«Zetex Semiconductors» и имеет функцию, называемую «20V N-CHANNEL ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв ZXMN2A01
Описание 20V N-CHANNEL ENHANCEMENT MODE MOSFET
Производители Zetex Semiconductors
логотип Zetex Semiconductors логотип 

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ZXMN2A01 Даташит, Описание, Даташиты
20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN2A01F
SUMMARY
V(BR)DSS=20V; RDS(ON)=0.12D=2.09A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
APPLICATIONS
DC - DC Converters
Power Management Functions
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE TAPE WIDTH
ZXMN2A01FTA
ZXMN2A01FTC
7”
13”
8mm
8mm
QUANTITY
PER REEL
3000 units
10000 units
DEVICE MARKING
7N2
SOT23
Top View
PROVISIONAL ISSUE B - JUNE 2001
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ZXMN2A01 Даташит, Описание, Даташиты
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current VGS=4.5V; TA=25°C(b)
VGS=4.5V; TA=70°C(b)
VGS=4.5V; TA=25°C(a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
Tj:Tstg
ZXMN2A01F
LIMIT
20
12
2.09
1.67
1.84
10
1.05
10
625
5
806
6.4
-55 to +150
UNIT
V
V
A
A
A
A
mW
mW/°C
mW
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
Junction to Ambient (b)
RθJA
RθJA
200 °C/W
155 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature.
PROVISIONAL ISSUE B - JUNE 2001
2









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ZXMN2A01 Даташит, Описание, Даташиты
ZXMN2A01F
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
20
0.7
Forward Transconductance (3)
DYNAMIC (3)
gfs
0.09
6.2
1
100
0.12
0.30
V ID=250µA, VGS=0V
µA VDS=20V, VGS=0V
nA VGS=±12V, VDS=0V
V
I =250µA,
D
VDS=
VGS
VGS=4.5V, ID=4A
VGS=2.5V, ID=1.5A
S VDS=10V,ID=4A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Ciss
Coss
Crss
299 pF
VDS=15 V, VGS=0V,
60 pF f=1MHz
33 pF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
2.31
2.60
1.55
1.31
3.1
0.7
1.0
ns
ns VDD =10V, ID=4A
ns RG=6.0, VGS=5V
ns
nC
VDS=10V,VGS=4.5V,
nC ID=4A
nC
Diode Forward Voltage (1)
VSD 0.84 0.95
Reverse Recovery Time (3) trr 11.2
Reverse Recovery Charge (3)
Qrr
3.64
NOTES
(1) Measured under pulsed conditions. Width 300µs. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
V TJ=25°C, IS=0.6A,
VGS=0V
ns TJ=25°C, IF=4A,
di/dt= 100A/µs
nC
PROVISIONAL ISSUE B - JUNE 2001
3










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