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ZXMN3A02X8 PDF даташит

Спецификация ZXMN3A02X8 изготовлена ​​​​«Zetex Semiconductors» и имеет функцию, называемую «30V N-CHANNEL ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв ZXMN3A02X8
Описание 30V N-CHANNEL ENHANCEMENT MODE MOSFET
Производители Zetex Semiconductors
логотип Zetex Semiconductors логотип 

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ZXMN3A02X8 Даташит, Описание, Даташиты
ZXMN3A02X8
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS=30V; RDS(ON)=0.025 ID=6.7A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
ZXMN3A02X8TA
ZXMN3A02X8TC
REEL
SIZE
7”
13”
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
1000 units
4000 units
DEVICE MARKING
ZXMN
3A02
Top View
ISSUE 1 - JANUARY 2002
1









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ZXMN3A02X8 Даташит, Описание, Даташиты
ZXMN3A02X8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current VGS=10V; TA=25°C (b)
VGS=10V; TA=70°C (b)
VGS=10V; TA=25°C (a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at TA=25°C (a)
Linear Derating Factor
VDSS
VGS
ID
IDM
IS
ISM
PD
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD
Operating and Storage Temperature Range
Tj:Tstg
LIMIT
30
20
6.7
5.4
5.3
24
3.2
24
1.1
8.8
1.8
14.4
-55 to +150
UNIT
V
V
A
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
RθJA
RθJA
VALUE
113
70
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum
junction temperature.
ISSUE 1 - JANUARY 2002
2









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ZXMN3A02X8 Даташит, Описание, Даташиты
CHARACTERISTICS
ZXMN3A02X8
* For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
ISSUE 1 - JANUARY 2002
3










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Номер в каталогеОписаниеПроизводители
ZXMN3A02X830V N-CHANNEL ENHANCEMENT MODE MOSFETZetex Semiconductors
Zetex Semiconductors

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