ZXMN3A02X8 PDF даташит
Спецификация ZXMN3A02X8 изготовлена «Zetex Semiconductors» и имеет функцию, называемую «30V N-CHANNEL ENHANCEMENT MODE MOSFET». |
|
Детали детали
Номер произв | ZXMN3A02X8 |
Описание | 30V N-CHANNEL ENHANCEMENT MODE MOSFET |
Производители | Zetex Semiconductors |
логотип |
7 Pages
No Preview Available ! |
ZXMN3A02X8
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS=30V; RDS(ON)=0.025 ID=6.7A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
ZXMN3A02X8TA
ZXMN3A02X8TC
REEL
SIZE
7”
13”
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
1000 units
4000 units
DEVICE MARKING
• ZXMN
3A02
Top View
ISSUE 1 - JANUARY 2002
1
No Preview Available ! |
ZXMN3A02X8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current VGS=10V; TA=25°C (b)
VGS=10V; TA=70°C (b)
VGS=10V; TA=25°C (a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at TA=25°C (a)
Linear Derating Factor
VDSS
VGS
ID
IDM
IS
ISM
PD
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD
Operating and Storage Temperature Range
Tj:Tstg
LIMIT
30
20
6.7
5.4
5.3
24
3.2
24
1.1
8.8
1.8
14.4
-55 to +150
UNIT
V
V
A
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
RθJA
RθJA
VALUE
113
70
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum
junction temperature.
ISSUE 1 - JANUARY 2002
2
No Preview Available ! |
CHARACTERISTICS
ZXMN3A02X8
* For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
ISSUE 1 - JANUARY 2002
3
Скачать PDF:
[ ZXMN3A02X8.PDF Даташит ]
Номер в каталоге | Описание | Производители |
ZXMN3A02X8 | 30V N-CHANNEL ENHANCEMENT MODE MOSFET | Zetex Semiconductors |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |