ZXMN6A07F PDF даташит
Спецификация ZXMN6A07F изготовлена «Zetex Semiconductors» и имеет функцию, называемую «60V N-CHANNEL ENHANCEMENT MODE MOSFET». |
|
Детали детали
Номер произв | ZXMN6A07F |
Описание | 60V N-CHANNEL ENHANCEMENT MODE MOSFET |
Производители | Zetex Semiconductors |
логотип |
7 Pages
No Preview Available ! |
60V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN6A07F
SUMMARY
V(BR)DSS=60V; RDS(ON)=0.4 ID=1A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilises a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Relay and Solenoid driving
• Motor control
ORDERING INFORMATION
DEVICE
ZXMN6A07FTA
ZXMN6A07FTC
REEL
SIZE
7”
13”
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000 units
10000 units
DEVICE MARKING
• 7N6
SOT23
Top View
ISSUE 1 - MARCH 2002
1
No Preview Available ! |
ZXMN6A07F
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current VGS=10V; TA=25°C(b)
VGS=10V; TA=70°C(b)
VGS=10V; TA=25°C(a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
Tj:Tstg
LIMIT
60
20
1.0
0.84
0.93
4
1
4
625
5
806
6.4
-55 to +150
UNIT
V
V
A
A
A
A
mW
mW/°C
mW
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
RθJA
RθJA
VALUE
200
155
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PC, D =0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to Transient
Thermal Impedance graph.
ISSUE 1 - MARCH 2002
2
No Preview Available ! |
CHARACTERISTICS
ZXMN6A07F
ISSUE 1 - MARCH 2002
3
Скачать PDF:
[ ZXMN6A07F.PDF Даташит ]
Номер в каталоге | Описание | Производители |
ZXMN6A07F | 60V N-CHANNEL ENHANCEMENT MODE MOSFET | Zetex Semiconductors |
ZXMN6A07F | 60V N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
ZXMN6A07FQTA | 60V N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
ZXMN6A07FTA | 60V N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |