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ZXMN6A07F PDF даташит

Спецификация ZXMN6A07F изготовлена ​​​​«Zetex Semiconductors» и имеет функцию, называемую «60V N-CHANNEL ENHANCEMENT MODE MOSFET».

Детали детали

Номер произв ZXMN6A07F
Описание 60V N-CHANNEL ENHANCEMENT MODE MOSFET
Производители Zetex Semiconductors
логотип Zetex Semiconductors логотип 

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ZXMN6A07F Даташит, Описание, Даташиты
60V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN6A07F
SUMMARY
V(BR)DSS=60V; RDS(ON)=0.4 ID=1A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilises a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
APPLICATIONS
DC - DC Converters
Power Management Functions
Relay and Solenoid driving
Motor control
ORDERING INFORMATION
DEVICE
ZXMN6A07FTA
ZXMN6A07FTC
REEL
SIZE
7”
13”
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000 units
10000 units
DEVICE MARKING
7N6
SOT23
Top View
ISSUE 1 - MARCH 2002
1









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ZXMN6A07F Даташит, Описание, Даташиты
ZXMN6A07F
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current VGS=10V; TA=25°C(b)
VGS=10V; TA=70°C(b)
VGS=10V; TA=25°C(a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
Tj:Tstg
LIMIT
60
20
1.0
0.84
0.93
4
1
4
625
5
806
6.4
-55 to +150
UNIT
V
V
A
A
A
A
mW
mW/°C
mW
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
RθJA
RθJA
VALUE
200
155
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PC, D =0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to Transient
Thermal Impedance graph.
ISSUE 1 - MARCH 2002
2









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ZXMN6A07F Даташит, Описание, Даташиты
CHARACTERISTICS
ZXMN6A07F
ISSUE 1 - MARCH 2002
3










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Номер в каталогеОписаниеПроизводители
ZXMN6A07F60V N-CHANNEL ENHANCEMENT MODE MOSFETZetex Semiconductors
Zetex Semiconductors
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ZXMN6A07FTA60V N-CHANNEL ENHANCEMENT MODE MOSFETDiodes
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