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ZXTS1000E6 PDF даташит

Спецификация ZXTS1000E6 изготовлена ​​​​«Zetex Semiconductors» и имеет функцию, называемую «12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE».

Детали детали

Номер произв ZXTS1000E6
Описание 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE
Производители Zetex Semiconductors
логотип Zetex Semiconductors логотип 

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ZXTS1000E6 Даташит, Описание, Даташиты
ZXTS1000E6
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
AND SCHOTTKY DIODE
SUMMARY
Transistor: VCEO=-12V, IC= -1.25A
Schottky Diode: VR=40V; IC= 0.5A
DESCRIPTION
A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded
SOT23 package.
FEATURES
Low Saturation Transistor
High Gain - 300 minimum
Low VF, fast switching Schottky
APPLICATIONS
Mobile telecomms, PCMCIA & SCSI
DC-DC Conversion
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
ZXTS1000E6TA
7 8mm embossed
ZXTS1000E6TC
13 8mm embossed
QUANTITY
PER REEL
3000 units
10000 units
DEVICE MARKING
1000
SOT23-6
Top View
ISSUE 1 - NOVEMBER 2000
1









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ZXTS1000E6 Даташит, Описание, Даташиты
ZXTS1000E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Transistor
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Schottky Diode
Continuous Reverse Voltage
Forward Current
Non Repetitive Forward Current t100µs
t10ms
Package
Power Dissipation at Tamb=25°C
single die “on”
both die “on”
Storage Temperature Range
Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
VR
IF
IFSM
PD
Tstg
Tj
VALUE
-12
-12
-5
-1.25
40
0.5
6.75
3
0.725
0.885
-55 to +150
125
UNIT
V
V
V
A
V
A
A
A
W
W
°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
single die “on”
both die “on”
RθJA
RθJA
138 °C/W
113 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
ISSUE 1 - NOVEMBER 2000
2









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ZXTS1000E6 Даташит, Описание, Даташиты
TRANSISTOR TYPICAL CHARACTERISTICS
ZXTS1000E6
0.4
+25°C
0.3
0.2
IC/IB=10
IC/IB=50
IC/IB=100
0.1
0.4
IC/IB=50
0.3
0.2
0.1
-55°C
+25°C
+100°C
+150°C
0
1m
10m 100m
1
10
IC - Collector Current (A)
VCE(sat) v IC
0
1m
10m
100m
1
10
IC - Collector Current (A)
VCE(sat) v IC
800
VCE=2V
600 +100°C
400
+25°C
200
-55°C
0
1m
10m 100m
1
IC - Collector Current (A)
hFE v IC
10
1.0 IC/IB=50
0.8
0.6
0.4 -55°C
+25°C
+100°C
0.2 +150°C
0
1m
10m 100m
1
IC - Collector Current (A)
VBE(sat) v IC
10
1.0
0.8
0.6
0.4
0.2
0
1m
-55°C
+25°C
+100°C
+150°C
10m 100m
1
IC - Collector Current (A)
VBE(on) v IC
10
10
1
100m
DC
1s
100ms
10ms
1ms
100µs
10m
100m
1
10 100
VCE - Collector Emitter Voltage (V)
Safe Operating Area
ISSUE 1 - NOVEMBER 2000
3










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Номер в каталогеОписаниеПроизводители
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