ZXTS1000E6 PDF даташит
Спецификация ZXTS1000E6 изготовлена «Zetex Semiconductors» и имеет функцию, называемую «12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE». |
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Детали детали
Номер произв | ZXTS1000E6 |
Описание | 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE |
Производители | Zetex Semiconductors |
логотип |
6 Pages
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ZXTS1000E6
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
AND SCHOTTKY DIODE
SUMMARY
Transistor: VCEO=-12V, IC= -1.25A
Schottky Diode: VR=40V; IC= 0.5A
DESCRIPTION
A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded
SOT23 package.
FEATURES
• Low Saturation Transistor
• High Gain - 300 minimum
• Low VF, fast switching Schottky
APPLICATIONS
• Mobile telecomms, PCMCIA & SCSI
• DC-DC Conversion
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
ZXTS1000E6TA
7 8mm embossed
ZXTS1000E6TC
13 8mm embossed
QUANTITY
PER REEL
3000 units
10000 units
DEVICE MARKING
1000
SOT23-6
Top View
ISSUE 1 - NOVEMBER 2000
1
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ZXTS1000E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Transistor
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Schottky Diode
Continuous Reverse Voltage
Forward Current
Non Repetitive Forward Current t≤100µs
t≤ 10ms
Package
Power Dissipation at Tamb=25°C
single die “on”
both die “on”
Storage Temperature Range
Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
VR
IF
IFSM
PD
Tstg
Tj
VALUE
-12
-12
-5
-1.25
40
0.5
6.75
3
0.725
0.885
-55 to +150
125
UNIT
V
V
V
A
V
A
A
A
W
W
°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
single die “on”
both die “on”
RθJA
RθJA
138 °C/W
113 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
ISSUE 1 - NOVEMBER 2000
2
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TRANSISTOR TYPICAL CHARACTERISTICS
ZXTS1000E6
0.4
+25°C
0.3
0.2
IC/IB=10
IC/IB=50
IC/IB=100
0.1
0.4
IC/IB=50
0.3
0.2
0.1
-55°C
+25°C
+100°C
+150°C
0
1m
10m 100m
1
10
IC - Collector Current (A)
VCE(sat) v IC
0
1m
10m
100m
1
10
IC - Collector Current (A)
VCE(sat) v IC
800
VCE=2V
600 +100°C
400
+25°C
200
-55°C
0
1m
10m 100m
1
IC - Collector Current (A)
hFE v IC
10
1.0 IC/IB=50
0.8
0.6
0.4 -55°C
+25°C
+100°C
0.2 +150°C
0
1m
10m 100m
1
IC - Collector Current (A)
VBE(sat) v IC
10
1.0
0.8
0.6
0.4
0.2
0
1m
-55°C
+25°C
+100°C
+150°C
10m 100m
1
IC - Collector Current (A)
VBE(on) v IC
10
10
1
100m
DC
1s
100ms
10ms
1ms
100µs
10m
100m
1
10 100
VCE - Collector Emitter Voltage (V)
Safe Operating Area
ISSUE 1 - NOVEMBER 2000
3
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Номер в каталоге | Описание | Производители |
ZXTS1000E6 | 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE | Zetex Semiconductors |
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