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H7N0307L PDF даташит

Спецификация H7N0307L изготовлена ​​​​«Hitachi» и имеет функцию, называемую «Silicon N Channel MOS FET High Speed Power Switching».

Детали детали

Номер произв H7N0307L
Описание Silicon N Channel MOS FET High Speed Power Switching
Производители Hitachi
логотип Hitachi логотип 

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H7N0307L Даташит, Описание, Даташиты
H7N0307LD, H7N0307LS, H7N0307LM
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1516D (Z)
5th. Edition
May 2002
Features
Low on-resistance
RDS(on) =4.6 mtyp.
Low drive current
4.5 V gate drive device can be driven from 5 V source
Outline
LDPAK
D
G
S
4 44
1
2
3
1
2
3
H7N0307LS
1
2
3
H7N0307LM
H7N0307LD
1. Gate
2. Drain
3. Source
4. Drain









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H7N0307L Даташит, Описание, Даташиты
H7N0307LD, H7N0307LS, H7N0307LM
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
V
DSS
V
GSS
ID
I Note 1
D(pulse)
I
DR
Pch Note 2
Channel to Case Thermal Impedance θch-c
Channel to Ambient Thermal
Impedance
θch-a
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25°C
Ratings
30
±20
60
240
60
90
1.39
89
150
–55 to +150
Unit
V
V
A
A
A
W
°C/W
°C/W
°C
°C
Rev.4, May 2002, page 2 of 11









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H7N0307L Даташит, Описание, Даташиты
H7N0307LD, H7N0307LS, H7N0307LM
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
V(BR)DSS
V(BR)GSS
I
GSS
I
DSS
VGS(off)
RDS(on)
30
±20
1.0
Forward transfer admittance
Input capacitance
|yfs|
Ciss
40
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Total gate charge
Qg —
Gate to source charge
Qgs —
Gate to drain charge
Qgd —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward
voltage
td(on)
tr
td(off)
tf
VDF
Body–drain diode reverse
recovery time
trr
Note: 1. Pulse test
Typ
4.6
8.0
65
2500
650
350
40
7
8
20
300
70
20
0.92
Max
±10
10
2.5
5.8
11.5
Unit
V
µA
µA
V
m
m
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
V = ±16 V, V = 0
GS DS
V = 30 V, V = 0
DS GS
ID = 1 mA, VDS = 10 V*1
ID = 30 A, VGS = 10 V*1
ID = 30 A, VGS = 4.5 V*1
ID = 30 A, VDS = 10 V*1
V = 10 V
DS
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 10 V
ID = 60 A
VGS = 10 V, ID = 30 A
RL =0.33
Rg =4.7
IF = 60 A, VGS = 0
60 — ns IF = 60 A, VGS = 0
diF/ dt =50 A/µs
Rev.4, May 2002, page 3 of 11










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H7N0307LSilicon N Channel MOS FET High Speed Power SwitchingHitachi
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