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74LVC1GX04 PDF даташит

Спецификация 74LVC1GX04 изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «One chip crystal oscillator driver».

Детали детали

Номер произв 74LVC1GX04
Описание One chip crystal oscillator driver
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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74LVC1GX04 Даташит, Описание, Даташиты
INTEGRATED CIRCUITS
DATA SHEET
74LVC1GX04
X-tal driver
Product specification
2003 Aug 13









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74LVC1GX04 Даташит, Описание, Даташиты
Philips Semiconductors
X-tal driver
FEATURES
Wide supply voltage range from 1.65 to 5.5 V
5 V tolerant input and a 5 V overvoltage tolerant
powered down output.
High noise immunity
Complies with JEDEC standard:
– JESD8-7 (1.65 to 1.95 V)
– JESD8-5 (2.3 to 2.7 V)
– JESD8B/JESD36 (2.7 to 3.6 V).
• ±24 mA output drive (VCC = 3.0 V)
CMOS low power consumption
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
SOT363 and SOT457 package
ESD protection:
– HBM EIA/JESD22-A114-A exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V.
Specified from 40 to +85 °C and 40 to +125 °C.
Product specification
74LVC1GX04
DESCRIPTION
The 74LVC1GX04 is a high-performance, low-power,
low-voltage, Si-gate CMOS device and superior to most
advanced CMOS compatible TTL families.
Inputs can be driven from either 3.3 or 5 V devices. This
feature allows the use of this device as translator in a
mixed 3.3 and 5 V environment.
This device is fully specified for partial power-down
applications using Ioff at output Y. The Ioff circuitry disables
the output Y, preventing the damaging backflow current
through the device when it is powered down.
The 74LVC1GX04 combines the functions of the
74LVC1GU04 and 74LVC1G04 to provide a device
optimized for use in crystal oscillator applications.
The integration of the two devices into the 74LVC1GX04
produces the benefits of a compact footprint, lower power
dissipation and stable operation over a wide range of
frequency and temperature.
2003 Aug 13
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74LVC1GX04 Даташит, Описание, Даташиты
Philips Semiconductors
X-tal driver
Product specification
74LVC1GX04
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C.
SYMBOL
tPHL/tPLH
CI
CPD
PARAMETER
CONDITIONS
propagation delay input X1 to output X2
propagation delay input X1 to output Y
input capacitance
VCC = 1.8 V; CL = 30 pF; RL = 1 k
VCC = 2.5 V; CL = 30 pF; RL = 500
VCC = 2.7 V; CL = 50 pF; RL = 500
VCC = 3.3 V; CL = 50 pF; RL = 500
VCC = 5.0 V; CL = 50 pF; RL = 500
VCC = 1.8 V; CL = 30 pF; RL = 1 k
VCC = 2.5 V; CL = 30 pF; RL = 500
VCC = 2.7 V; CL = 50 pF; RL = 500
VCC = 3.3 V; CL = 50 pF; RL = 500
VCC = 5.0 V; CL = 50 pF; RL = 500
power dissipation capacitance per buffer output enabled; notes 1 and 2
TYPICAL UNIT
2.1 ns
1.7 ns
2.5 ns
2.1 ns
1.6 ns
4.4 ns
2.9 ns
3.0 ns
2.8 ns
2.3 ns
5 pF
35 pF
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total load switching outputs;
(CL × VCC2 × fo) = sum of outputs.
2. The condition is VI = GND to VCC.
FUNCTION TABLE
See note 1.
INPUT
X1
H
L
Note
1. H = HIGH voltage level;
L = LOW voltage level.
OUTPUT
X2
L
H
Y
H
L
2003 Aug 13
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