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74LVT04PWDH PDF даташит

Спецификация 74LVT04PWDH изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «3.3V Hex inverter».

Детали детали

Номер произв 74LVT04PWDH
Описание 3.3V Hex inverter
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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74LVT04PWDH Даташит, Описание, Даташиты
INTEGRATED CIRCUITS
74LVT04
3.3V Hex inverter
Product specification
IC24 Data Handbook
Philips
Semiconductors
1996 Aug 28









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74LVT04PWDH Даташит, Описание, Даташиты
Philips Semiconductors
3.3V Hex inverter
Product specification
74LVT04
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
Tamb = 25°C;
GND = 0V
tPLH
tPHL
Propagation
delay
An to Yn
CL = 50pF;
VCC = 3.3V
CIN
Input
capacitance
VI = 0V or 3.0V
ICCL
Total supply
current
Outputs Low;
VCC = 3.6V
TYPICAL UNIT
2.6
2.5
ns
3 pF
1.5 mA
PIN CONFIGURATION
LOGIC DIAGRAM
VCC = Pin 14
GND = Pin 7
A0 1
A1 3
A2 5
A3 9
A4 11
A5 13
2
Y0
4
Y1
6
Y2
8
Y3
10
Y4
12
Y5
LOGIC SYMBOL (IEEE/IEC)
SA00340
A0 1
Y0 2
A1 3
Y1 4
A2 5
Y2 6
GND 7
14 VCC
13 A5
12 Y5
11 A4
10 Y4
9 A3
8 Y3
SA00338
PIN DESCRIPTION
PIN
NUMBER
SYMBOL
NAME AND FUNCTION
1, 3, 5, 9,
11, 13
An Data inputs
2, 4, 6, 8,
10, 12
Yn Data outputs
7 GND Ground (0V)
14 VCC Positive supply voltage
FUNCTION TABLE
INPUTS
An
L
H
NOTES:
H = High voltage level
L = Low voltage level
OUTPUT
Yn
H
L
1 12
34
56
98
11 10
13 12
LOGIC SYMBOL
1 3 5 9 11 13
SF00014
VCC = Pin 14
GND = Pin 7
A0 A1 A2 A3 A4 A5
Y0 Y1 Y2 Y3 Y4 Y5
2 4 6 8 10 12
SA00339
ORDERING INFORMATION
PACKAGES
14-Pin Plastic SO
14-Pin Plastic SSOP
14-Pin Plastic TSSOP
TEMPERATURE RANGE
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
OUTSIDE NORTH AMERICA
74LVT04 D
74LVT04 DB
74LVT04 PW
NORTH AMERICA
74LVT04 D
74LVT04 DB
74LVT04PW DH
DWG NUMBER
SOT108-1
SOT337-1
SOT402-1
1996 Aug 28
2 853-1874 17244









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74LVT04PWDH Даташит, Описание, Даташиты
Philips Semiconductors
3.3V Hex inverter
Product specification
74LVT04
ABSOLUTE MAXIMUM RATINGS1, 2
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VCC
IIK
VI
IOK
VOUT
IOUT
DC supply voltage
DC input diode current
DC input voltage3
DC output diode current
DC output voltage3
DC output current
VI < 0
VO < 0
Output in Off or High state
Output in High state
Output in Low state
–0.5 to +4.6
–50
–0.5 to +7.0
–50
–0.5 to +7.0
–32
64
V
mA
V
mA
V
mA
Tstg Storage temperature range
–65 to 150
°C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
VCC
VI
VIH
VIL
IOH
IOL
t/v
Tamb
DC supply voltage
Input voltage
High-level input voltage
Low-level Input voltage
High-level output current
Low-level output current
Input transition rise or fall rate; Outputs enabled
Operating free-air temperature range
LIMITS
MIN MAX
2.7 3.6
0 5.5
2.0
0.8
–20
32
10
–40 +85
UNIT
V
V
V
V
mA
mA
ns/V
°C
1996 Aug 28
3










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